公开(公告)号：US20240203746A1

公开(公告)日：2024-06-20

申请号：US18391618

申请日：2023-12-20

Applicant: SEMES CO., LTD. ,  UIF (University Industry Foundation), Yonsei University

Inventor： Hang Lim LEE ,  Min Young KIM ,  Jung Woo OH ,  Kyung Hwan KIM ,  Sun Hae CHOI

IPC: H01L21/306

CPC classification number: H01L21/30604

Abstract: A chemical etching method using a metal catalyst is provided that prevents deterioration of device performance by preventing the formation of deep-level impurities inside silicon. The etching method comprises forming a metal catalyst containing nickel silicide on a silicon substrate, and selectively etching the silicon substrate in contact with the metal catalyst through chemical etching of the metal catalyst.

公开(公告)号：US20230100455A1

公开(公告)日：2023-03-30

申请号：US17953750

申请日：2022-09-27

Applicant: SEMES CO., LTD.

Inventor： Hang Lim LEE

IPC: H01L23/00

Abstract: The inventive concept provides a bonding method. The bonding method includes bonding a second bonding object to a first bonding object, which is a bonding step; providing a protective agent to a region of the first bonding object which is not bonded to the second bonding object, which is a protective agent providing step; and etching a backside of the second bonding object, which is an etching step.

公开(公告)号：US20230343740A1

公开(公告)日：2023-10-26

申请号：US17726487

申请日：2022-04-21

Applicant: SEMES CO., LTD.

Inventor： Min Young KIM ,  Hang Lim LEE ,  Ji Hoon PARK

IPC: H01L23/00 ,  H05H1/24

CPC classification number: H01L24/74 ,  H05H1/24 ,  H01L24/05 ,  H01L2224/05647 ,  H01L2224/05541 ,  H01L24/80 ,  H01L2224/80013 ,  H01L2224/80395 ,  H05H2245/40

Abstract: There are provided a die surface treatment apparatus capable of sequentially performing reduction and activation processes on dies in a dual zone and a die bonding system including the die surface treatment apparatus. The die surface treatment apparatus includes: a stage supporting dies, a first plasma generator installed on a moving path of the dies, the first plasma generator performing a reduction process on surfaces of the dies, in a first plasma area; and a second plasma generator installed on the moving path of the dies, the second plasma generator performing a hydrophilization process on the surfaces of the dies, in a second plasma area.

公开(公告)号：US20150129135A1

公开(公告)日：2015-05-14

申请号：US14532190

申请日：2014-11-04

Applicant: SEMES CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hang Lim LEE ,  Jong Jin WEON ,  Soon Hyun KIM ,  Seung Dae SEOK

IPC: H01L23/00

CPC classification number: H01L24/75 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2224/75252 ,  H01L2224/75253 ,  H01L2224/75301 ,  H01L2224/75305 ,  H01L2224/75312 ,  H01L2224/75502 ,  H01L2224/7565 ,  H01L2224/75745 ,  H01L2224/759 ,  H01L2224/81048 ,  H01L2224/81203 ,  H01L2224/83048 ,  H01L2224/83203 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01013 ,  H01L2924/00014

Abstract: A bonding head and a die bonding apparatus having the same are disclosed. The bonding head includes a body connected to a driving section for transferring the die, a plate heater mounted to a lower surface of the body and a collet mounted to a lower surface of the plate heater and configured to hold the die using a vacuum pressure. A cooling channel is formed at the lower surface of the body, and cooling passages are formed through the body and connected with the cooling channel to supply a cooling fluid into the cooling channel and to recover the cooling fluid from the cooling channel thereby cooling the plate heater.

Abstract translation: 公开了具有该键合头的接合头和芯片接合装置。 接合头包括连接到用于传送模具的驱动部分的主体，安装到主体的下表面的板加热器和安装到板加热器的下表面并被构造成使用真空压力保持模具的夹头。 冷却通道形成在主体的下表面，并且冷却通道通过主体形成并与冷却通道连接，以将冷却流体供应到冷却通道中并从冷却通道回收冷却流体，从而冷却板 加热器。