公开(公告)号：US20240203746A1

公开(公告)日：2024-06-20

申请号：US18391618

申请日：2023-12-20

申请人： SEMES CO., LTD. ,  UIF (University Industry Foundation), Yonsei University

发明人： Hang Lim LEE ,  Min Young KIM ,  Jung Woo OH ,  Kyung Hwan KIM ,  Sun Hae CHOI

IPC分类号： H01L21/306

CPC分类号： H01L21/30604

摘要： A chemical etching method using a metal catalyst is provided that prevents deterioration of device performance by preventing the formation of deep-level impurities inside silicon. The etching method comprises forming a metal catalyst containing nickel silicide on a silicon substrate, and selectively etching the silicon substrate in contact with the metal catalyst through chemical etching of the metal catalyst.

公开(公告)号：US20230343740A1

公开(公告)日：2023-10-26

申请号：US17726487

申请日：2022-04-21

申请人： SEMES CO., LTD.

发明人： Min Young KIM ,  Hang Lim LEE ,  Ji Hoon PARK

IPC分类号： H01L23/00 ,  H05H1/24

CPC分类号： H01L24/74 ,  H05H1/24 ,  H01L24/05 ,  H01L2224/05647 ,  H01L2224/05541 ,  H01L24/80 ,  H01L2224/80013 ,  H01L2224/80395 ,  H05H2245/40

摘要： There are provided a die surface treatment apparatus capable of sequentially performing reduction and activation processes on dies in a dual zone and a die bonding system including the die surface treatment apparatus. The die surface treatment apparatus includes: a stage supporting dies, a first plasma generator installed on a moving path of the dies, the first plasma generator performing a reduction process on surfaces of the dies, in a first plasma area; and a second plasma generator installed on the moving path of the dies, the second plasma generator performing a hydrophilization process on the surfaces of the dies, in a second plasma area.