公开(公告)号：US20240203699A1

公开(公告)日：2024-06-20

申请号：US18538919

申请日：2023-12-13

Applicant: SEMES CO., LTD.

Inventor： Young Jo JIN ,  Dong Young JANG ,  Yun Sang KIM ,  Min Sung JEON ,  Min Hee HONG ,  Young Seo PARK ,  Jeong Sik KIM

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32201 ,  H01L21/02274 ,  H01L21/67098 ,  H01L21/67248

Abstract: Proposed are a substrate treatment method and a substrate treatment system in which a cooling process with an improved cooling speed and an improved cooling efficiency is applied in a substrate treatment process using an upper heat source. A substrate treatment method etching a substrate at an atomic layer level by using a processing unit and a thermal treatment unit may be provided. The substrate treatment method includes a surface treatment process in which a substrate surface is modified in the processing unit, a desorption process in which the substrate surface-treated in the processing unit is heated by the upper heat source in the thermal treatment unit, thereby generating a desorption reaction on the substrate surface, and a temperature adjustment process in which the substrate is cooled by a cooling plate in the thermal treatment unit, thereby maintaining a temperature of the substrate at a set temperature range.

公开(公告)号：US20230064390A1

公开(公告)日：2023-03-02

申请号：US17895540

申请日：2022-08-25

Applicant: SEMES CO., LTD.

Inventor： Min Sung JEON ,  Yun Sang KIM ,  Sung Min CHOI ,  Dong Young JANG ,  Ji Heon KIM ,  Young Jo JIN

IPC: H01J37/32

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit positioned within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space, and wherein the plasma generation unit includes: a bottom electrode member; and a top electrode member opposite the bottom electrode, and wherein the top electrode member includes: a first plate; and an electrode layer on the first plate and including an electrode.

公开(公告)号：US20240222171A1

公开(公告)日：2024-07-04

申请号：US18542665

申请日：2023-12-16

Applicant: SEMES CO., LTD.

Inventor： Young Eun JEON ,  Yun Sang KIM ,  Min Sung JEON ,  Tae Hwan LEE ,  Sung Min CHOI ,  Jin Hee HONG ,  Dong Young JANG ,  Young Jo JIN

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67276 ,  H01J37/3244 ,  H01J37/32495 ,  H01L21/67098 ,  H01L21/67213 ,  H01J2237/002 ,  H01J2237/334

Abstract: Proposed are a substrate treatment system and a substrate treatment method. More particularly, a technology capable of realizing a fine etching adjustment and capable of increasing a Unit Per Equipment Hour (UPEH) by reducing time required for a process is provided.

公开(公告)号：US20240213001A1

公开(公告)日：2024-06-27

申请号：US18542776

申请日：2023-12-18

Applicant: SEMES CO., LTD.

Inventor： Young Jo JIN ,  Sang Jeong LEE ,  Min Sung JEON ,  Tae Hwan LEE ,  Min Hee HONG

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/687

CPC classification number: H01J37/32724 ,  H01J37/32522 ,  H01L21/30655 ,  H01L21/68742 ,  H01J2237/3341

Abstract: Proposed are a substrate treatment method and a substrate treatment apparatus that are capable of adjusting cooling efficiency for a substrate. According to an embodiment of the present disclosure, there may be provided the substrate treatment method including a heating process in which a surface of the substrate is heated and a cooling process in which the substrate is cooled by supplying a cooling gas to a lower surface of the substrate. Furthermore, the cooling process includes a cooling condition controlling process in which a cooling condition is controlled.

公开(公告)号：US20240063025A1

公开(公告)日：2024-02-22

申请号：US18213894

申请日：2023-06-26

Applicant: SEMES CO., LTD.

Inventor： Jin Hee HONG ,  Yun Sang KIM ,  Min Sung JEON ,  Young Eun JEON ,  Sung Min CHOI ,  Young Jo JIN ,  Dong Young JANG

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01L21/67069

Abstract: A sacrificial passivation film deposition method according to an exemplary embodiment of the present disclosure may include: depositing a primary sacrificial passivation film on an entire surface of a substrate using a thermal ALD (T-ALD) process; and additionally depositing a secondary sacrificial passivation film on an upper surface and at least a portion of a side surface of an upper portion of the primary sacrificial passivation film using a plasma-ALD (P-ALD) process.