公开(公告)号：US20210013049A1

公开(公告)日：2021-01-14

申请号：US16918212

申请日：2020-07-01

Applicant: SEMES CO., LTD.

Inventor： Seong Gil Lee ,  Sehoon Oh ,  Dong Sub Oh ,  Ji-Hwan Lee ,  Dong-Hun Kim ,  Wan Jae Park

IPC: H01L21/3213 ,  H01L21/67 ,  H01J37/32

Abstract: An apparatus and method for processing a substrate using plasma, which has high plasma stability and process reproducibility, is provided. The method includes providing an apparatus for processing a substrate comprising a plasma generating region and a process region separate from the plasma generating region, placing the substrate including a silicon layer and an oxide layer in the process region, forming a hydrogen atmosphere in the process region by providing a hydrogen-based gas to the process region without passing through the plasma generating region, generating plasma by providing a fluorine-based gas to the plasma generating region, and providing the generated plasma to the process region to selectively remove the silicon layer compared to the oxide layer.

公开(公告)号：US12004268B2

公开(公告)日：2024-06-04

申请号：US17091054

申请日：2020-11-06

Applicant: SEMES CO., LTD.

Inventor： Ji-Hwan Lee

IPC: H01L21/67 ,  H05B1/02

CPC classification number: H05B1/0233 ,  H01L21/67098

Abstract: A transferring unit, a substrate treating apparatus including the same, and a substrate treating method are provided. The substrate treating apparatus includes a support plate, a plurality of protrusions protruding upward from the support plate to support a substrate, a temperature adjusting member provided in the support plate to heat or cool the substrate, and an ultrasound applying member to apply an ultrasound between the substrate placed on the plurality of protrusions and the support plate.

公开(公告)号：US12142492B2

公开(公告)日：2024-11-12

申请号：US16952071

申请日：2020-11-18

Applicant: SEMES CO., LTD.

Inventor： Ji-Hwan Lee ,  Seong Gil Lee ,  Dong Sub Oh ,  Myoungsub Noh ,  Dong-Hun Kim ,  Wan Jae Park

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: A method for processing a substrate includes providing the substrate, a film being formed on the substrate, performing pretreatment to surface-treat the film formed on the substrate using a treatment gas in a plasma state, and performing, after the pretreatment, liquid treatment to remove the film from the substrate by supplying a treatment liquid onto the substrate.