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公开(公告)号:US10005092B2
公开(公告)日:2018-06-26
申请号:US15223931
申请日:2016-07-29
Applicant: Semes Co., Ltd.
Inventor: Sehoon Oh , Kihoon Choi , Jinkyu Kim
CPC classification number: B05B7/10 , B05B7/06 , B05B7/061 , B05B7/0815 , B05C5/0208 , H01L21/67051
Abstract: A nozzle for supplying a fluid to a substrate, the nozzle including a body having a liquid discharge line through which the liquid flows and a gas discharge line that surrounds the liquid discharge line and through which a gas flow, wherein the body includes a plurality of liquid discharge holes that discharge the liquid flowing through the liquid discharge line, and a gas discharge hole that discharges the gas flowing through the gas discharge line.
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公开(公告)号:US20240053685A1
公开(公告)日:2024-02-15
申请号:US18231727
申请日:2023-08-08
Applicant: SEMES CO., LTD.
Inventor: Youngdae Chung , Jihoon Jeong , Kihoon Choi , Taehee Kim , Sehoon Oh
CPC classification number: G03F7/70291 , G03F7/2043 , G03F7/091 , G03F7/70241 , G03F7/70875 , G03F7/70141
Abstract: Provided is a photomask processing apparatus including a light source, a photomask including a first surface provided with a plurality of patterns, an inspector configured to detect a target correction region including at least one target correction pattern, and a digital micromirror device (DMD) including a plurality of mirror blocks, and the DMD is further configured to switch, to the on state, mirror blocks corresponding to the target correction region of the first surface of the photomask among the plurality of mirror blocks, and switch, to the off state, mirror blocks corresponding to a non-correction region among the plurality of mirror blocks, the non-correction region being a region other than the target correction region on the first surface of the photomask.
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公开(公告)号:US20210013049A1
公开(公告)日:2021-01-14
申请号:US16918212
申请日:2020-07-01
Applicant: SEMES CO., LTD.
Inventor: Seong Gil Lee , Sehoon Oh , Dong Sub Oh , Ji-Hwan Lee , Dong-Hun Kim , Wan Jae Park
IPC: H01L21/3213 , H01L21/67 , H01J37/32
Abstract: An apparatus and method for processing a substrate using plasma, which has high plasma stability and process reproducibility, is provided. The method includes providing an apparatus for processing a substrate comprising a plasma generating region and a process region separate from the plasma generating region, placing the substrate including a silicon layer and an oxide layer in the process region, forming a hydrogen atmosphere in the process region by providing a hydrogen-based gas to the process region without passing through the plasma generating region, generating plasma by providing a fluorine-based gas to the plasma generating region, and providing the generated plasma to the process region to selectively remove the silicon layer compared to the oxide layer.
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