公开(公告)号：US20240239099A1

公开(公告)日：2024-07-18

申请号：US18411107

申请日：2024-01-12

Applicant: SEMES CO., LTD.

Inventor： Solmin PARK ,  Hyunmin LEE ,  Junho KIM ,  Sujin KIM

IPC: B41J2/045

CPC classification number: B41J2/04561 ,  B41J2/0451 ,  B41J2/0457 ,  B41J2/04581 ,  B41J2/04588

Abstract: A substrate processing method includes determining a first impact of an ink droplet ejected toward a substrate moving at a first speed, determining a second impact of an ink droplet ejected toward the substrate moving at a second speed, determining a reference ejection speed based on the first impact and the second impact, determining a plurality of third impacts of a plurality of ink droplets respectively ejected from a plurality of nozzles toward the substrate moving at a third speed, determining an ink ejection speed of each of the plurality of nozzles based on the first impact and the plurality of third impacts, and comparing the ink ejection speeds of the plurality of nozzles with the reference ejection speed and determining whether ink ejection performance of the plurality of nozzles is abnormal.

公开(公告)号：US20210057239A1

公开(公告)日：2021-02-25

申请号：US16999836

申请日：2020-08-21

Applicant: SEMES CO., LTD.

Inventor： Junho KIM ,  Kyungsik SHIN ,  Youngseo AN ,  Jinki SHIN ,  Man Kyu KANG ,  Yoonki SA

IPC: H01L21/67 ,  H01L21/683

Abstract: An apparatus for treating a substrate includes a process chamber having a process space therein, a support unit that supports the substrate in the process space, a heating member that heats the substrate supported on the support unit, and an exhaust unit that evacuates the process space. The exhaust unit includes an exhaust duct and a heat retention unit having a retention space that retains heat released from the process space. The retention space surrounds an adjacent area located adjacent to the process chamber in the exhaust duct.

公开(公告)号：US20210118708A1

公开(公告)日：2021-04-22

申请号：US17072501

申请日：2020-10-16

Applicant: SEMES CO., LTD.

Inventor： Kyungsik SHIN ,  Junho KIM ,  Jinki SHIN

IPC: H01L21/67 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/66 ,  F27B17/00 ,  H05B3/22 ,  F27D5/00 ,  G03F7/16

Abstract: An apparatus for treating a substrate includes a process chamber having a process space inside, a support unit that supports the substrate in the process space, a heating unit that is provided inside the support unit and that heats the substrate, an exhaust unit that evacuates the process space, and a gas supply unit that supplies a gas into the process space, and the gas supply unit supplies the gas at a temperature selected from a first temperature and a second temperature.