公开(公告)号：US20210118708A1

公开(公告)日：2021-04-22

申请号：US17072501

申请日：2020-10-16

Applicant: SEMES CO., LTD.

Inventor： Kyungsik SHIN ,  Junho KIM ,  Jinki SHIN

IPC: H01L21/67 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/66 ,  F27B17/00 ,  H05B3/22 ,  F27D5/00 ,  G03F7/16

Abstract: An apparatus for treating a substrate includes a process chamber having a process space inside, a support unit that supports the substrate in the process space, a heating unit that is provided inside the support unit and that heats the substrate, an exhaust unit that evacuates the process space, and a gas supply unit that supplies a gas into the process space, and the gas supply unit supplies the gas at a temperature selected from a first temperature and a second temperature.

公开(公告)号：US20240186167A1

公开(公告)日：2024-06-06

申请号：US18507439

申请日：2023-11-13

Applicant: SEMES CO., LTD.

Inventor： Kyungsik SHIN ,  Seunghwan LEE ,  Kyoungdon LEE

IPC: H01L21/68 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01L21/68 ,  H01L21/67098 ,  H01L21/67778

Abstract: An apparatus for processing a substrate may include a substrate holding part configured to maintain and support a substrate, a substrate transfer part configured to load the substrate onto the substrate holding part and to unload the substrate from the substrate holding part, and a substrate processing part configured to heat the substrate or to cool the substrate. The substrate holding part may include a plate configured to maintain and support the substrate, guide parts configured to move the substrate into a central region of the plate, and an alignment part configured to move the guide parts toward the central region of the plate utilizing a vacuum suction mechanism.

公开(公告)号：US20210057239A1

公开(公告)日：2021-02-25

申请号：US16999836

申请日：2020-08-21

Applicant: SEMES CO., LTD.

Inventor： Junho KIM ,  Kyungsik SHIN ,  Youngseo AN ,  Jinki SHIN ,  Man Kyu KANG ,  Yoonki SA

IPC: H01L21/67 ,  H01L21/683

Abstract: An apparatus for treating a substrate includes a process chamber having a process space therein, a support unit that supports the substrate in the process space, a heating member that heats the substrate supported on the support unit, and an exhaust unit that evacuates the process space. The exhaust unit includes an exhaust duct and a heat retention unit having a retention space that retains heat released from the process space. The retention space surrounds an adjacent area located adjacent to the process chamber in the exhaust duct.