公开(公告)号：US20220199368A1

公开(公告)日：2022-06-23

申请号：US17545130

申请日：2021-12-08

Applicant: SEMES CO., LTD.

Inventor： Hyoungkyu Son ,  Jong-Hwan An ,  Jae Hyun Cho ,  Min Keun Bae ,  Ogsen Galstyan ,  Dong Suk Kim ,  Hyeon Gyu Kim ,  Won Seok Lee ,  Sung Je Kim

IPC: H01J37/32

Abstract: Provided is a support unit included in an apparatus for treating a substrate using plasma and configured to support the substrate. The support unit may include a power supply rod connected to a high-frequency power supply; an electrode plate configured to receive power from the power supply rod; and a ground ring provided to surround the electrode plate when viewed from the top and including a ground ring to be grounded.

公开(公告)号：US12249491B2

公开(公告)日：2025-03-11

申请号：US17395860

申请日：2021-08-06

Applicant: SEMES CO., LTD.

Inventor： Hyoungkyu Son ,  Jong-Hwan An ,  Jae Hyun Cho ,  Min Keun Bae ,  Dong Suk Kim ,  Hyeon Gyu Kim ,  Ogsen Galstyan ,  Won Seok Lee ,  Sung Je Kim

IPC: H01J37/32 ,  H01L21/3065

Abstract: The inventive concept relates to a substrate support unit provided in an apparatus for treating a substrate using plasma. In an embodiment, the substrate support unit includes a dielectric plate on which the substrate is placed, a lower electrode that is disposed under the dielectric plate and that has a first diameter, a power supply rod that applies RF power to the lower electrode and has a second diameter, and a ground member disposed under the lower electrode and spaced apart from the lower electrode by a first gap by an insulating member, the ground member including a plate portion having a through-hole formed therein through which the power supply rod passes, in which the through-hole has a third diameter.

公开(公告)号：US20240055229A1

公开(公告)日：2024-02-15

申请号：US18193897

申请日：2023-03-31

Applicant: SEMES CO., LTD.

Inventor： Aixian Zhang ,  Jung Hwan Lee ,  Min Keun Bae

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32642 ,  H01J37/32568 ,  H01J37/32128 ,  H01J2237/334

Abstract: The present disclosure relates to a method of controlling a plasma processing apparatus, and a plasma processing apparatus for performing the method. According to one embodiment of the present disclosure, a method of controlling a plasma processing apparatus includes supplying power having a sine wave from a high-frequency power source to a lower electrode to generate a plasma; and supplying power from the high-frequency power source to the lower electrode, to control an ion in the generated plasma, and when a voltage of a wafer disposed on the lower electrode has a negative peak value in a phase region, inputting a negative DC voltage to a focusing ring by a DC power source.