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1.
公开(公告)号:US20230377894A1
公开(公告)日:2023-11-23
申请号:US18304754
申请日:2023-04-21
Applicant: SEMES CO., LTD.
Inventor: Minyoung Kim , Hanglim Lee , Yunsang Kim
IPC: H01L21/306 , H01L21/768 , H01L23/48 , H01L21/67
CPC classification number: H01L21/30608 , H01L21/76898 , H01L23/481 , H01L21/6708 , H01L21/67086 , H01L23/535
Abstract: Disclosed is a method of forming a semiconductor device, the method including: forming at least one metal catalyst layer on a rear surface of a semiconductor substrate, on which at least one buried power rail for power transfer is formed, to be at least partially aligned with the buried power rail; and forming at least one rear surface via hole by supplying an etchant to the semiconductor substrate so that the semiconductor substrate between the metal catalyst layer and the buried power rail is anisotropically etched while the metal catalyst layer descends to an inside of the semiconductor substrate using metal-assisted chemical etching (MACE).
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公开(公告)号:US11600593B2
公开(公告)日:2023-03-07
申请号:US16658469
申请日:2019-10-21
Applicant: SEMES CO., LTD.
Inventor: Hanglim Lee , Jungsuk Goh , Kwangsup Kim , Doyeon Kim , Minyoung Kim , Jihoon Park , Yungi Kim , Do Heon Kim , Choonghyun Lee , Hyo Seok Lee , Soo Ill Jang
Abstract: Disclosed are a die bonding apparatus, a substrate bonding apparatus, a die bonding method, and a substrate bonding method that are capable of bonding a die to a substrate or bonding substrates together without using a bonding medium such as an adhesion film and a solder bump. The die bonding method includes hydrophilizing a bonding surface of the die, by plasma processing, forming a liquid film on a bonding area of the substrate, by supplying a liquid including water to the bonding area of the substrate, pre-bonding the die to the substrate by bringing the die into contact with the liquid film, and post-bonding one or more dies to the substrate at the same time, by performing heat treatment in a state in which the one or more dies are pre-bonded to the substrate.
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