公开(公告)号：US20220406577A1

公开(公告)日：2022-12-22

申请号：US17884994

申请日：2022-08-10

Applicant: SEMES CO., LTD.

Inventor： Sang Kee LEE

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  C23C16/458

Abstract: The present invention relates to a substrate supporting member and a substrate processing method. A gas flow path supplying a heat transfer gas to a rear surface of a substrate is provided in the substrate supporting member according to an embodiment of the present invention. Furthermore, a gas flow restricting member restricting gas flow to a different extent from each other according to a direction of the gas flow is provided at the gas flow path or at an external heat transfer gas supply pipe connected to the gas flow path. According to the present invention, by providing the gas flow restricting member restricting the gas flow to a different extent from each other according to the direction of the gas flow, there are effects of minimizing the time required for exhausting the heat transfer gas while preventing the arcing from occurring in a heat transfer gas flow path.

公开(公告)号：US20230178409A1

公开(公告)日：2023-06-08

申请号：US18073437

申请日：2022-12-01

Applicant: SEMES CO., LTD.

Inventor： Jun Seok PARK ,  Chul Ho JUNG ,  Sang Kee LEE

IPC: H01L21/683 ,  H01L21/324 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01L21/324 ,  H01L21/67103 ,  H01L21/68757

Abstract: Proposed is a substrate support unit, a method of manufacturing the same, and a substrate processing apparatus including the same. The substrate support unit includes a base component, a chucking component mounted on the base component, and an intermediate layer interposed between the base component and the chucking component, wherein the intermediate layer includes a joining part formed in a partial region to couple the base component and the chucking component.

公开(公告)号：US20210366696A1

公开(公告)日：2021-11-25

申请号：US17327567

申请日：2021-05-21

Applicant: SEMES CO., LTD.

Inventor： Je Hee LEE ,  Sang Kee LEE

IPC: H01J37/32

Abstract: An electrostatic chuck according to the present disclosure includes: a dielectric plate embedded with an electrode and configured to electrostatically hold a substrate; a base plate disposed below the dielectric plate; and a heating unit provided in the base plate and configured to independently heat a plurality of regions of the substrate, such that temperatures of the plurality of regions of the substrate may be independently controlled, thereby improving uniformity of the temperature of the substrate.

公开(公告)号：US20210358726A1

公开(公告)日：2021-11-18

申请号：US17318727

申请日：2021-05-12

Applicant: SEMES CO., LTD.

Inventor： Hyun Tak KO ,  Sang Kee LEE

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: The present disclosure provides an electrostatic chuck, in which a heat transfer layer using a heat transfer fluid is disposed between a chuck main body disposed at an upper side of the electrostatic chuck and a chuck base disposed at a lower side of the electrostatic chuck, and the chuck main body is simply placed on the chuck base so as to be physically in contact with the heat transfer layer, such that heat may be stably transferred without damage even in a condition in which the heat transfer layer is at a high temperature, and the chuck main body may be easily separated from the chuck base for maintenance.

公开(公告)号：US20200227300A1

公开(公告)日：2020-07-16

申请号：US16741178

申请日：2020-01-13

Applicant: SEMES CO., LTD.

Inventor： Sang Kee LEE ,  Yoshiaki MORIYA

IPC: H01L21/683 ,  H01J37/32

Abstract: An electrostatic chuck that fixes a work substrate by an electrostatic force, the electrostatic chuck is disclosed. The electrostatic chuck includes a dielectric plate being configured to support the work substrate, a base plate being configured to support the dielectric plate and an adsorption electrode interposed between the dielectric plate and the base plate, and being configured to generate an electrostatic force for adsorbing the work substrate. The dielectric plate is a sapphire plate, the base plate consists of a alumina ceramic material, the adsorption electrode has a resistance change rate of 20% or less in a range of −200° C. to 400° C., and the dielectric plate and the base plate are integrally bonded through the adsorption electrode.

公开(公告)号：US20190115194A1

公开(公告)日：2019-04-18

申请号：US16160587

申请日：2018-10-15

Applicant: SEMES CO., LTD.

Inventor： Sang Kee LEE

IPC: H01J37/32

Abstract: The present invention relates to a substrate supporting member and a substrate processing method. A gas flow path supplying a heat transfer gas to a rear surface of a substrate is provided in the substrate supporting member according to an embodiment of the present invention. Furthermore, a gas flow restricting member restricting gas flow to a different extent from each other according to a direction of the gas flow is provided at the gas flow path or at an external heat transfer gas supply pipe connected to the gas flow path. According to the present invention, by providing the gas flow restricting member restricting the gas flow to a different extent from each other according to the direction of the gas flow, there are effects of minimizing the time required for exhausting the heat transfer gas while preventing the arcing from occurring in a heat transfer gas flow path.