公开(公告)号：US20140151788A1

公开(公告)日：2014-06-05

申请号：US14177140

申请日：2014-02-10

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter A. Burke ,  Agajan Suwhanov ,  Prasad Venkatraman

IPC: H01L29/78

CPC classification number: H01L29/7813 ,  H01L21/26506 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/66727 ,  H01L29/66734

Abstract: In one embodiment, a structure for a trench power field effect transistor device with controlled, shallow, abrupt, body contact regions.

Abstract translation: 在一个实施例中，具有受控的，浅的，突然的身体接触区域的沟槽功率场效应晶体管器件的结构。

公开(公告)号：US10276556B2

公开(公告)日：2019-04-30

申请号：US16004718

申请日：2018-06-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Moshe Agam ,  Johan Camiel Julia Janssens ,  Bruce Greenwood ,  Sallie Hose ,  Agajan Suwhanov

IPC: H01L29/06 ,  H01L27/02 ,  H01L21/76 ,  H01L23/535 ,  H01L29/36 ,  H01L29/66 ,  H01L29/739 ,  H01L21/762 ,  H01L21/265

Abstract: A semiconductor device includes a floating buried doped region, a first doped region disposed between the floating buried doped region and a first major surface, and a semiconductor region disposed between the floating buried doped region and a second major surface. Trench isolation portions extend from the first major surface and terminate within the semiconductor region to define an active region. An insulated trench structure is laterally disposed between the trench isolation portions, terminates within the floating buried doped region, and defines a first portion and a second portion of the active region. A biasing semiconductor device is within the first portion, and a functional semiconductor device is within the second portion. The biasing semiconductor device is adapted to set a potential of the floating buried doped region and adapted to divert parasitic currents away from the functional semiconductor device.

公开(公告)号：US09368615B2

公开(公告)日：2016-06-14

申请号：US14177140

申请日：2014-02-10

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter A Burke ,  Agajan Suwhanov ,  Prasad Venkatraman

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L21/265 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L29/7813 ,  H01L21/26506 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/66727 ,  H01L29/66734

Abstract: In one embodiment, a structure for a trench power field effect transistor device with controlled, shallow, abrupt, body contact regions.

Abstract translation: 在一个实施例中，具有受控的，浅的，突然的身体接触区域的沟槽功率场效应晶体管器件的结构。

公开(公告)号：US10818516B2

公开(公告)日：2020-10-27

申请号：US16353551

申请日：2019-03-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Moshe Agam ,  Johan Camiel Julia Janssens ,  Bruce Greenwood ,  Sallie Hose ,  Agajan Suwhanov

IPC: H01L21/48 ,  H01L29/06 ,  H01L29/36 ,  H01L29/66 ,  H01L29/739 ,  H01L21/762 ,  H01L21/265 ,  H01L29/10 ,  H01L21/761 ,  H01L27/02 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00

Abstract: A semiconductor device includes a floating buried doped region, a first doped region disposed between the floating buried doped region and a first major surface, and a semiconductor region disposed between the floating buried doped region and a second major surface. Trench isolation portions extend from the first major surface and terminate within the semiconductor region to define an active region. An insulated trench structure is laterally disposed between the trench isolation portions, terminates within the floating buried doped region, and defines a first portion and a second portion of the active region. A biasing semiconductor device is within the first portion, and a functional semiconductor device is within the second portion. The biasing semiconductor device is adapted to set a potential of the floating buried doped region and adapted to divert parasitic currents away from the functional semiconductor device.

公开(公告)号：US10026728B1

公开(公告)日：2018-07-17

申请号：US15497443

申请日：2017-04-26

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Moshe Agam ,  Johan Camiel Julia Janssens ,  Bruce Greenwood ,  Sallie Hose ,  Agajan Suwhanov

IPC: H01L29/06 ,  H01L21/76 ,  H01L27/02 ,  H01L23/535 ,  H01L29/36 ,  H01L29/66 ,  H01L29/739 ,  H01L21/762 ,  H01L21/265

Abstract: A semiconductor device includes a floating buried doped region, a first doped region disposed between the floating buried doped region and a first major surface, and a semiconductor region disposed between the floating buried doped region and a second major surface. Trench isolation portions extend from the first major surface and terminate within the semiconductor region to define an active region. An insulated trench structure is laterally disposed between the trench isolation portions, terminates within the floating buried doped region, and defines a first portion and a second portion of the active region. A biasing semiconductor device is within the first portion, and a functional semiconductor device is within the second portion. The biasing semiconductor device is adapted to set a potential of the floating buried doped region and adapted to divert parasitic currents away from the functional semiconductor device.