公开(公告)号：US12051967B2

公开(公告)日：2024-07-30

申请号：US17806597

申请日：2022-06-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Dean E. Probst ,  Joseph Andrew Yedinak ,  Balaji Padmanabhan ,  Peter A Burke ,  Jeffery A. Neuls ,  Ashok Challa

IPC: H02M1/34 ,  H01L27/07

CPC classification number: H02M1/34 ,  H01L27/0727

Abstract: In some aspects, the techniques described herein relate to a circuit including: a metal-oxide semiconductor field-effect transistor (MOSFET) including a gate, a source, and a drain; and a snubber circuit coupled between the drain and the source, the snubber circuit including: a diode having a cathode and an anode, the cathode being coupled with the drain; a capacitor having a first terminal coupled with the anode, and a second terminal coupled with the source; and a resistor having a first terminal coupled with the anode and the first terminal of the capacitor, and a second terminal coupled with the source.

公开(公告)号：US09368615B2

公开(公告)日：2016-06-14

申请号：US14177140

申请日：2014-02-10

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Peter A Burke ,  Agajan Suwhanov ,  Prasad Venkatraman

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L21/265 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L29/7813 ,  H01L21/26506 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/66727 ,  H01L29/66734

Abstract: In one embodiment, a structure for a trench power field effect transistor device with controlled, shallow, abrupt, body contact regions.

Abstract translation: 在一个实施例中，具有受控的，浅的，突然的身体接触区域的沟槽功率场效应晶体管器件的结构。

公开(公告)号：US09245963B2

公开(公告)日：2016-01-26

申请号：US14514017

申请日：2014-10-14

Applicant: Semiconductor Components Industries, LLC

Inventor： Peter A Burke ,  Gordon M Grivna ,  Balaji Padmanabhan ,  Prasad Venkatraman

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/40 ,  H01L29/78 ,  H01L29/739 ,  H01L29/417 ,  H01L29/45 ,  H01L29/49 ,  H01L29/08

CPC classification number: H01L29/7813 ,  H01L29/0869 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66348 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7827

Abstract: In one embodiment, a vertical insulated-gate field effect transistor includes a shield electrode formed in trench structure within a semiconductor material. A gate electrode is isolated from the semiconductor material using gate insulating layers. Before the shield electrode is formed, spacer layers can be used form shield insulating layers along portions of the trench structure. The shield insulating layers are thicker than the gate insulating layers. In another embodiment, the shield insulating layers have variable thickness.

Abstract translation: 在一个实施例中，垂直绝缘栅场效应晶体管包括形成在半导体材料内的沟槽结构中的屏蔽电极。 栅电极使用栅极绝缘层与半导体材料隔离。 在形成屏蔽电极之前，间隔层可以沿沟槽结构的部分形成屏蔽绝缘层。 屏蔽绝缘层比栅极绝缘层厚。 在另一个实施例中，屏蔽绝缘层具有可变的厚度。