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    Circuitry for biasing light shielding structures and deep trench isolation structures
    2.
    发明授权
    Circuitry for biasing light shielding structures and deep trench isolation structures 有权
    用于偏置遮光结构和深沟槽隔离结构的电路

    公开(公告)号：US09515111B2

    公开(公告)日：2016-12-06

    申请号：US14518862

    申请日：2014-10-20

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Swarnal Borthakur ,  Marc Sulfridge

    IPC: H01L27/146 ,  H04N5/335 ,  H04N5/369 ,  H04N5/235 ,  H04N5/238

    CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H04N5/2354 ,  H04N5/238 ,  H04N5/335 ,  H04N5/3698

    Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. The image sensor die may include light shielding structures for preventing reference photodiodes in the image sensor die from receiving light and in-pixel grid structures for preventing cross-talk between adjacent pixels. The light shielding structure may receive a desired biasing voltage through a corresponding TOV, an integral plug structure, and/or a connection that makes contact directly with a polysilicon gate. The in-pixel grid may have a peripheral contact that receives the desired biasing voltage through a light shield, a conductive strap, a TOV, and/or an aluminum pad.

    Abstract translation: 成像系统可以包括堆叠在数字信号处理器（DSP）管芯的顶部上的图像传感器管芯。 可以在图像传感器管芯中形成贯通氧化物通孔（TOV），并且可以至少部分地延伸到DSP管芯中以促进图像传感器管芯和DSP管芯之间的通信。 图像传感器管芯可以包括用于防止图像传感器管芯中的参考光电二极管接收光和像素间栅格结构以防止相邻像素之间的串扰的遮光结构。 光屏蔽结构可以通过相应的TOV，整体插塞结构和/或直接与多晶硅栅极接触的连接来接收期望的偏置电压。 像素内栅格可以具有通过光屏蔽，导电带，TOV和/或铝垫接收期望的偏置电压的外围接触。

    Imaging systems with integrated light shield structures
    3.
    发明授权
    Imaging systems with integrated light shield structures 有权
    具有集成光屏蔽结构的成像系统

    公开(公告)号：US09497366B1

    公开(公告)日：2016-11-15

    申请号：US14723147

    申请日：2015-05-27

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Ulrich Boettiger ,  Andrew Perkins ,  Marc Sulfridge ,  Swarnal Borthakur

    IPC: H04N5/225 ,  H04N9/04 ,  H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H04N5/2254 ,  H04N9/045

    Abstract: An imaging system may include an image sensor having an array of pixels. The image sensor may include an array of microlenses formed over a substrate and an array of color filter elements interposed between the microlenses and the substrate. Dielectric wall structures may be interposed between the color filter elements. Light shield structures may be formed within or on the dielectric wall structures and may be used to reduce optical crosstalk between adjacent pixels. The light shield structures may be formed on opposing sides or corners of the color filter elements and may partially or fully extend along the height of the color filter elements. In some arrangements, the light shield structures may each have a vertical portion that contacts a side surface of an adjacent color filter element and a horizontal portion that contacts a lower surface of an adjacent color filter element.

    Abstract translation: 成像系统可以包括具有像素阵列的图像传感器。 图像传感器可以包括形成在衬底上的微透镜阵列和插入在微透镜和衬底之间的滤色器元件的阵列。 电介质壁结构可以插在滤色器元件之间。 光屏蔽结构可以形成在电介质壁结构内或上，并且可以用于减少相邻像素之间的光学串扰。 遮光结构可以形成在滤色器元件的相对侧或角上，并且可以沿着滤色器元件的高度部分或全部地延伸。 在一些布置中，遮光结构可以各自具有接触相邻滤色器元件的侧表面的垂直部分和接触相邻滤色器元件的下表面的水平部分。

    IMAGE SENSORS WITH THROUGH-OXIDE VIA STRUCTURES
    4.
    发明申请
    IMAGE SENSORS WITH THROUGH-OXIDE VIA STRUCTURES 有权
    具有通过氧化物的图像传感器通过结构

    公开(公告)号：US20150303233A1

    公开(公告)日：2015-10-22

    申请号：US14254196

    申请日：2014-04-16

    Applicant: Semiconductor Components Industries, LLC

    Inventor： Swarnal Borthakur ,  Marc Sulfridge ,  Mitchell J. Mooney

    IPC: H01L27/146 ,  H04N9/04 ,  H04N5/369

    CPC classification number: H01L27/14636 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/1469 ,  H04N5/369 ,  H04N9/045

    Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. The image sensor die may be a backside illuminated image sensor die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. Color filter housing structures may be formed over active image sensor pixels on the image sensor die. In-pixel grid structures may be integrated with the color filter housing structures to help reduce crosstalk. Light shielding structures may be formed over reference image sensor pixels on the image sensor die. The TOVs, the in-pixel grid structures, and the light shielding structures may be formed simultaneously. The formation of the color filter housing structures may also be integrated the formation of the TOVs.

    Abstract translation: 成像系统可以包括堆叠在数字信号处理器（DSP）管芯的顶部上的图像传感器管芯。 图像传感器芯片可以是背面照射的图像传感器芯片。 可以在图像传感器管芯中形成贯通氧化物通孔（TOV），并且可以至少部分地延伸到DSP管芯中以促进图像传感器管芯和DSP管芯之间的通信。 彩色滤光片外壳结构可以形成在图像传感器裸片上的有源图像传感器像素上。 像素间栅格结构可以与滤色器外壳结构集成以帮助减少串扰。 遮光结构可以在图像传感器芯片上的参考图像传感器像素上形成。 可以同时形成TOV，像素内栅格结构和遮光结构。 滤色器外壳结构的形成也可以整合TOV的形成。

    CIRCUITRY FOR BIASING LIGHT SHIELDING STRUCTURES AND DEEP TRENCH ISOLATION STRUCTURES
    5.
    发明申请
    CIRCUITRY FOR BIASING LIGHT SHIELDING STRUCTURES AND DEEP TRENCH ISOLATION STRUCTURES 有权
    偏光屏蔽结构和深层隔离结构的电路

    公开(公告)号：US20160111463A1

    公开(公告)日：2016-04-21

    申请号：US14518862

    申请日：2014-10-20

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Swarnal Borthakur ,  Marc Sulfridge

    IPC: H01L27/146 ,  H04N5/238 ,  H04N5/235 ,  H04N5/335 ,  H04N5/369

    CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H04N5/2354 ,  H04N5/238 ,  H04N5/335 ,  H04N5/3698

    Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. The image sensor die may include light shielding structures for preventing reference photodiodes in the image sensor die from receiving light and in-pixel grid structures for preventing cross-talk between adjacent pixels. The light shielding structure may receive a desired biasing voltage through a corresponding TOV, an integral plug structure, and/or a connection that makes contact directly with a polysilicon gate. The in-pixel grid may have a peripheral contact that receives the desired biasing voltage through a light shield, a conductive strap, a TOV, and/or an aluminum pad.

    Abstract translation: 成像系统可以包括堆叠在数字信号处理器（DSP）管芯的顶部上的图像传感器管芯。 可以在图像传感器管芯中形成贯通氧化物通孔（TOV），并且可以至少部分地延伸到DSP管芯中以促进图像传感器管芯和DSP管芯之间的通信。 图像传感器管芯可以包括用于防止图像传感器管芯中的参考光电二极管接收光和像素间栅格结构以防止相邻像素之间的串扰的遮光结构。 光屏蔽结构可以通过相应的TOV，整体插塞结构和/或直接与多晶硅栅极接触的连接来接收期望的偏置电压。 像素内栅格可以具有通过光屏蔽，导电带，TOV和/或铝垫接收期望的偏置电压的外围接触。

    Imaging circuitry with robust scribe line structures
    6.
    发明授权
    Imaging circuitry with robust scribe line structures 有权
    具有强大划线结构的成像电路

    公开(公告)号：US09293495B2

    公开(公告)日：2016-03-22

    申请号：US14270236

    申请日：2014-05-05

    Applicant: Semiconductor Components Industries, LLC

    Inventor： Swarnal Borthakur ,  Marc Sulfridge ,  Mitchell J. Mooney

    IPC: H01L27/146 ,  H04N5/369

    CPC classification number: H01L27/14632 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H04N5/3692

    Abstract: An image sensor wafer may be stacked on top of a digital signal processor (DSP) wafer. The image sensor wafer may include multiple image sensor dies, whereas the DSP wafer may include multiple DSP dies. The stacked wafers may be cut along scribe line regions to dice the wafers into individual components. Each image sensor die may include through-oxide vias (TOVs) that extend at least partially into a corresponding DSP die. Scribe line support structures may be formed surrounding the scribe line regions. The scribe line support structures and the TOVs may be formed during the same processing step. The TOVs can also be formed through deep trench isolation structures.

    Abstract translation: 图像传感器晶片可以堆叠在数字信号处理器（DSP）晶片的顶部。 图像传感器晶片可以包括多个图像传感器管芯，而DSP晶片可以包括多个DSP管芯。 堆叠的晶片可以沿着划线区域切割以将晶片切割成单独的部件。 每个图像传感器管芯可以包括至少部分地延伸到对应的DSP管芯中的贯通氧化物通孔（TOV）。 可以在划线区域周围形成划线支撑结构。 可以在相同的处理步骤期间形成划线支撑结构和TOV。 TOV也可以通过深沟槽隔离结构形成。

    Imaging systems with circuit element in carrier wafer
    7.
    发明授权
    Imaging systems with circuit element in carrier wafer 有权
    在载体晶片中具有电路元件的成像系统

    公开(公告)号：US09024406B2

    公开(公告)日：2015-05-05

    申请号：US14035863

    申请日：2013-09-24

    Applicant: Semiconductor Components Industries, LLC

    Inventor： Scott Churchwell ,  Marc Sulfridge ,  Swarnal Borthakur

    IPC: H01L27/146

    CPC classification number: H01L27/14634 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/1469

    Abstract: An imaging system may include an image sensor package with an image sensor wafer mounted on a carrier wafer, which may be a silicon substrate. A capacitor may be formed in the carrier wafer. Trenches may be etched in a serpentine pattern in the silicon substrate. Conductive plates of the capacitor may be formed at least partially in the trenches. An insulator material may be formed between the capacitor and the silicon substrate. A dielectric layer may be formed between the conductive plates of the capacitor. The image sensor package may be mounted on a printed circuit board via a ball grid array. Conductive vias may electrically couple the capacitor and the image sensor wafer to the printed circuit board.

    Abstract translation: 成像系统可以包括具有安装在可以是硅衬底的载体晶片上的图像传感器晶片的图像传感器封装。 可以在载体晶片中形成电容器。 可以在硅衬底中以蛇纹图案蚀刻沟槽。 电容器的导电板可以至少部分地形成在沟槽中。 可以在电容器和硅衬底之间形成绝缘体材料。 可以在电容器的导电板之间形成电介质层。 图像传感器封装可以经由球栅阵列安装在印刷电路板上。 导电通孔可将电容器和图像传感器晶片电耦合到印刷电路板。

    Image sensors with through-oxide via structures
    10.
    发明授权
    Image sensors with through-oxide via structures 有权
    具有通过氧化物通孔结构的图像传感器

    公开(公告)号：US09349767B2

    公开(公告)日：2016-05-24

    申请号：US14254196

    申请日：2014-04-16

    Applicant: Semiconductor Components Industries, LLC

    Inventor： Swarnal Borthakur ,  Marc Sulfridge ,  Mitchell J. Mooney

    IPC: H01L27/146 ,  H04N5/369 ,  H04N9/04

    CPC classification number: H01L27/14636 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/1469 ,  H04N5/369 ,  H04N9/045

    Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. The image sensor die may be a backside illuminated image sensor die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. Color filter housing structures may be formed over active image sensor pixels on the image sensor die. In-pixel grid structures may be integrated with the color filter housing structures to help reduce crosstalk. Light shielding structures may be formed over reference image sensor pixels on the image sensor die. The TOVs, the in-pixel grid structures, and the light shielding structures may be formed simultaneously. The formation of the color filter housing structures may also be integrated the formation of the TOVs.

    Abstract translation: 成像系统可以包括堆叠在数字信号处理器（DSP）管芯的顶部上的图像传感器管芯。 图像传感器芯片可以是背面照射的图像传感器芯片。 可以在图像传感器管芯中形成贯通氧化物通孔（TOV），并且可以至少部分地延伸到DSP管芯中以促进图像传感器管芯和DSP管芯之间的通信。 彩色滤光片外壳结构可以形成在图像传感器裸片上的有源图像传感器像素上。 像素间栅格结构可以与滤色器外壳结构集成以帮助减少串扰。 遮光结构可以在图像传感器芯片上的参考图像传感器像素上形成。 可以同时形成TOV，像素内栅格结构和遮光结构。 滤色器外壳结构的形成也可以整合TOV的形成。

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