公开(公告)号：US11942326B2

公开(公告)日：2024-03-26

申请号：US17123264

申请日：2020-12-16

申请人： Semiconductor Components Industries, LLC

发明人： Petr Kostelnik ,  Tomas Novak ,  Peter Coppens ,  Peter Moens ,  Abhishek Banerjee

IPC分类号： H01L21/285 ,  H01L21/02 ,  H01L21/3215 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L21/28581 ,  H01L21/0217 ,  H01L21/3215 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/47 ,  H01L29/66462 ,  H01L29/7786

摘要： A process to form a HEMT can have a gate electrode layer that initially has a plurality of spaced-apart doped regions. In an embodiment, any of the spaced-apart doped regions can be formed by depositing or implanting p-type dopant atoms. After patterning, the gate electrode can include an n-type doped region over the p-type doped region. In another embodiment a barrier layer can underlie the gate electrode and include a lower film with a higher Al content and thinner than an upper film. In a further embodiment, a silicon nitride layer can be formed over the gate electrode layer and can help to provide Si atoms for the n-type doped region and increase a Mg:H ratio within the gate electrode. The HEMT can have good turn-on characteristics, low gate leakage when in the on-state, and better time-dependent breakdown as compared to a conventional HEMT.

公开(公告)号：US10818787B1

公开(公告)日：2020-10-27

申请号：US16515269

申请日：2019-07-18

申请人： Semiconductor Components Industries, LLC

发明人： Abhishek Banerjee ,  Peter Moens

IPC分类号： H01L29/778 ,  H01L29/51 ,  H01L29/20 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423

摘要： An electronic device can include a HEMT. In an embodiment, a gate electrode, a drain electrode, and an access region including a first portion closer to the gate electrode and a second portion closer to the drain electrode. A lower dielectric film can overlie a portion of the access region, and an upper dielectric region can overlie another portion of the access region. In another embodiment, a dielectric film can have a relatively positive or negative charge and a varying thickness. In a further embodiment, the HEMT can include a gate electrode; a dielectric film overlying the gate electrode and defining openings to the gate electrode, wherein a portion of the dielectric film is disposed between the openings; and a gate interconnect extending into the openings of the dielectric film and contacting the gate electrode and the portion of the dielectric film.

公开(公告)号：US10680094B2

公开(公告)日：2020-06-09

申请号：US16052041

申请日：2018-08-01

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Abhishek Banerjee ,  Piet Vanmeerbeek ,  Peter Moens

IPC分类号： H01L29/15 ,  H01L31/0256 ,  H01L29/778 ,  H01L29/205 ,  H01L29/51 ,  H01L29/49 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  H01L29/36 ,  H01L29/10 ,  H01L21/306 ,  H01L21/28 ,  H01L29/20 ,  H01L23/31 ,  H01L23/29

摘要： An electronic device can include a channel layer including AlzGa(1-z)N, where 0≤z≤0.1; a gate dielectric layer; and a gate electrode of a high electron mobility transistor (HEMT). The gate dielectric layer can be disposed between the channel layer and the gate electrode. The gate electrode includes a gate electrode film that contacts the gate dielectric layer, wherein the gate electrode film can include a material, wherein the material has a sum of an electron affinity and a bandgap energy of at least 6 eV. In some embodiments, the material can include a p-type semiconductor material. The particular material for the gate electrode film can be selected to achieve a desired threshold voltage for an enhancement-mode HEMT. In another embodiment, a portion of the barrier layer can be left intact under the gate structure. Such a configuration can improve carrier mobility and reduce Rdson.

公开(公告)号：US10680092B2

公开(公告)日：2020-06-09

申请号：US16148127

申请日：2018-10-01

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Peter Moens ,  Aurore Constant ,  Peter Coppens ,  Abhishek Banerjee

IPC分类号： H01L29/778 ,  H01L29/417 ,  H01L29/20 ,  H01L29/205 ,  H01L21/02 ,  H01L29/10 ,  H01L29/66 ,  H01L21/306

摘要： An electronic device can include a channel layer, a first carrier supply layer, a gate electrode of a HEMT, and a drain electrode of the HEMT. The HEMT can have a 2DEG along an interface between the channel and first carrier supply layers. In an aspect, the 2DEG can have a highest density that is the highest at a point between the drain and gate electrodes. In another aspect, the HEMT can further comprise first and second carrier supply layers, wherein the first carrier supply layer is disposed between the channel and second carrier supply layers. The second carrier supply layer be thicker at a location between the drain and gate electrodes. In a further aspect, a process of forming an electronic device can include the HEMT. In a particular embodiment, first and second carrier supply layers can be epitaxially grown from an underlying layer.

公开(公告)号：US11342443B2

公开(公告)日：2022-05-24

申请号：US16833237

申请日：2020-03-27

申请人： Semiconductor Components Industries, LLC

发明人： Peter Moens ,  Abhishek Banerjee

IPC分类号： H01L29/66 ,  H01L29/32 ,  H01L29/778 ,  H01L29/40 ,  H01L21/265 ,  H01L21/266 ,  H01L21/324 ,  H01L29/20

摘要： An electronic device including a transistor structure, and a process of forming the electronic device can include providing a workpiece including a substrate, a first layer, and a channel layer including a compound semiconductor material; and implanting a species into the workpiece such that the projected range extends at least into the channel and first layers, and the implant is performed into an area corresponding to at least a source region of the transistor structure. In an embodiment, the area corresponds to substantially all area occupied by the transistor structure. In another embodiment, the implant can form crystal defects within layers between the substrate and source, gate, and drain electrodes. The crystal defects may allow resistive coupling between the substrate and the channel structure within the transistor structure. The resistive coupling allows for better dynamic on-state resistance and potentially other electrical properties.

公开(公告)号：US09960265B1

公开(公告)日：2018-05-01

申请号：US15422764

申请日：2017-02-02

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Abhishek Banerjee ,  Peter Moens ,  Gordon M. Grivna

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L21/02175 ,  H01L21/02107 ,  H01L21/02241 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/66462 ,  H01L29/7786

摘要： In one embodiment, a III-V high electron mobility semiconductor device includes a semiconductor substrate including a GaN layer, an AlGaN layer on the GaN layer wherein a 2 DEG is formed near an interface of the GaN layer and the AlGaN layer. An insulator may be on at least a first portion of the AlGaN layer and a P-type GaN gate region may be overlying a second portion of the AlGaN layer wherein the 2 DEG does not underlie the P-type GaN gate region.

公开(公告)号：US20210005740A1

公开(公告)日：2021-01-07

申请号：US16948517

申请日：2020-09-22

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Abhishek Banerjee ,  Peter Moens

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/51 ,  H01L29/40 ,  H01L29/423 ,  H01L29/417

摘要： An electronic device can include a HEMT. In an embodiment, a gate electrode, a drain electrode, and an access region including a first portion closer to the gate electrode and a second portion closer to the drain electrode. A lower dielectric film can overlie a portion of the access region, and an upper dielectric region can overlie another portion of the access region. In another embodiment, a dielectric film can have a relatively positive or negative charge and a varying thickness. In a further embodiment, the HEMT can include a gate electrode; a dielectric film overlying the gate electrode and defining openings to the gate electrode, wherein a portion of the dielectric film is disposed between the openings; and a gate interconnect extending into the openings of the dielectric film and contacting the gate electrode and the portion of the dielectric film.

公开(公告)号：US09842923B2

公开(公告)日：2017-12-12

申请号：US14191030

申请日：2014-02-26

申请人： Semiconductor Components Industries, LLC

发明人： Abhishek Banerjee ,  Peter Moens

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/40 ,  H01L29/20

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66462

摘要： In one embodiment, a high electron mobility device structure includes heterostructure with a Group III-nitride channel layer and a Group III-nitride barrier layer that forms a two-dimensional electron gas layer at an interface between the two layers. At least one current carrying electrode includes a recess-structured conductive contact adjoining and making Ohmic contact with the two-dimensional electron gas layer. The recess-structured conductive contact has at least one side surface defined to have a rounded wavy shape.

公开(公告)号：US09728629B1

公开(公告)日：2017-08-08

申请号：US15209952

申请日：2016-07-14

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Abhishek Banerjee ,  Aurore Constant ,  Peter Moens ,  Brice De Jaeger

IPC分类号： H01L29/04 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/452

摘要： An electronic device can include a substrate having a primary surface; a monocrystalline semiconductor film overlying the primary surface of the substrate; and a polycrystalline compound semiconductor layer adjacent to the monocrystalline semiconductor film. In an embodiment, the polycrystalline compound semiconductor layer has a dopant concentration at most 1×1016 atoms/cm3, a donor concentration of greater than 1×1017 donors/cm3, and is part of a contact of an electrode of a transistor. In another embodiment, the electronic device can further include an interconnect over the polycrystalline compound semiconductor layer, wherein a combination of the interconnect and polycrystalline compound semiconductor layer form an ohmic contact. In a further embodiment, a polycrystalline compound semiconductor layer can be adjacent to the monocrystalline semiconductor film, wherein an energy level of a conduction band of the polycrystalline compound semiconductor layer is lower than its Fermi energy level.

公开(公告)号：US10811527B2

公开(公告)日：2020-10-20

申请号：US16123115

申请日：2018-09-06

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Peter Moens ,  Abhishek Banerjee ,  Piet Vanmeerbeek

IPC分类号： H01L29/778 ,  H01L29/423 ,  H01L29/417 ,  H01L27/07 ,  H01L29/47 ,  H01L29/66 ,  H01L29/06 ,  H01L29/872

摘要： An electronic device can include a drain electrode of a high electron mobility transistor overlying a channel layer; a source electrode overlying the channel layer, wherein a lowermost portion of the source electrode overlies at least a portion of the channel layer; and a gate electrode of the high electron mobility transistor overlying the channel layer; and a current limiting control structure that controls current passing between the drain and source electrodes. The current limiting control structure can be disposed between the source and gate electrodes, the current limiting control structure can be coupled to the source electrode and the first high electron mobility transistor, and the current limiting control structure has a threshold voltage. The current limiting control structure can be a Schottky-gated HEMT or a MISHEMT.