公开(公告)号：US20170092669A1

公开(公告)日：2017-03-30

申请号：US15375764

申请日：2016-12-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Rick JEROME ,  David T. PRICE ,  Sungkwon C. HONG ,  Gordon M. Grivna

IPC: H01L27/146 ,  H01L23/48

CPC classification number: H01L27/1464 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14605 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: An image sensor structure includes a region of semiconductor material having a first major surface and a second major surface. A pixel structure is within the region of semiconductor material and includes a plurality of doped regions and a plurality of conductive structures. A metal-filled trench structure extends from the first major surface to the second major surface. A first contact structure is electrically connected to a first surface of the conductive trench structure, and a second contact structure electrically connected to a second surface of the conductive trench structure. In one embodiment, the second major surface is configured to receive incident light.

公开(公告)号：US20230352515A1

公开(公告)日：2023-11-02

申请号：US18347117

申请日：2023-07-05

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jeffrey Peter GAMBINO ,  Rick JEROME ,  David T. PRICE

IPC: H01L27/146 ,  H01L23/532

CPC classification number: H01L27/14636 ,  H01L27/1464 ,  H01L23/53266 ,  H01L27/1462 ,  H01L27/1463

Abstract: Implementations of image sensor devices may include a through-silicon-via (TSV) formed in a backside of an image sensor device and extending through a material of a die to a metal landing pad. The metal landing pad may be within a contact layer. The devices may include a TSV edge seal ring surrounding a portion of the TSV in the contact layer and extending from a first surface of the contact layer into the contact layer to a depth coextensive with a depth of the TSV.