公开(公告)号：US20140220745A1

公开(公告)日：2014-08-07

申请号：US14217519

申请日：2014-03-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryosuke WATANABE ,  Hidekazu TAKAHASHI ,  Takuya TSURUME

IPC: H01L21/56

CPC classification number: H01L21/56 ,  B32B37/20 ,  B32B2305/342 ,  B42D25/45 ,  B42D2033/46 ,  G06K19/07718 ,  G06K19/07749 ,  G06K19/0775 ,  H01L21/67126 ,  H01L21/67132 ,  H01L21/67144 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1266 ,  H01L2221/68318 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2924/0002 ,  Y10T156/1089 ,  Y10T156/1093 ,  Y10T156/1712 ,  H01L2924/00

Abstract: It is an object of the invention to improve the production efficiency in sealing a thin film integrated circuit and to prevent the damage and break. Further, it is another object of the invention to prevent a thin film integrated circuit from being damaged in shipment and to make it easier to handle the thin film integrated circuit. The invention provides a laminating system in which rollers are used for supplying a substrate for sealing, receiving IC chips, separating, and sealing. The separation, sealing, and reception of a plurality of thin film integrated circuits can be carried out continuously by rotating the rollers; thus, the production efficiency can be extremely improved. Further, the thin film integrated circuits can be easily sealed since a pair of rollers opposite to each other is used.

Abstract translation: 本发明的目的是提高密封薄膜集成电路的生产效率并防止损坏和断裂。 此外，本发明的另一个目的是防止薄膜集成电路在运输中受损，并且使得更容易处理薄膜集成电路。 本发明提供了一种层压系统，其中辊子用于供应用于密封的基板，接收IC芯片，分离和密封。 通过旋转辊可以连续地进行多个薄膜集成电路的分离，密封和接收; 从而可以极大地提高生产效率。 此外，由于使用了彼此相对的一对辊，所以能够容易地密封薄膜集成电路。

公开(公告)号：US20130228885A1

公开(公告)日：2013-09-05

申请号：US13865365

申请日：2013-04-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yoshitaka DOZEN ,  Tomoyuki AOKI ,  Hidekazu TAKAHASHI ,  Daiki YAMADA ,  Eiji SUGIYAMA ,  Kaori OGITA ,  Naoto KUSUMOTO

IPC: H01L23/29

CPC classification number: H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.

Abstract translation: 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。

公开(公告)号：US20130334611A1

公开(公告)日：2013-12-19

申请号：US13961197

申请日：2013-08-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu TAKAHASHI ,  Daiki YAMADA ,  Kyosuke ITO ,  Eiji SUGIYAMA ,  Yoshitaka DOZEN

IPC: H01L23/66

CPC classification number: H01L23/66 ,  H01L23/49855 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.