公开(公告)号：US20230207567A1

公开(公告)日：2023-06-29

申请号：US17996516

申请日：2021-04-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuto YAKUBO ,  Shoki MIYATA ,  Akio SUZUKI ,  Takayuki IKEDA

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1207 ,  H01L29/7869 ,  H01L29/78681

Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a current-to-voltage conversion portion, a current switch portion, a voltage-to-current conversion portion, and a control portion. The current switch portion includes a first transistor. The voltage-to-current conversion portion includes a second transistor. The control portion includes a third transistor. The first transistor includes an oxide semiconductor in a channel formation region. The second transistor includes a nitride semiconductor in a channel formation region. The third transistor includes silicon in a channel formation region. The first transistor is provided over a first substrate. The second transistor and the third transistor are provided over a second substrate.

公开(公告)号：US20250149446A1

公开(公告)日：2025-05-08

申请号：US18928265

申请日：2024-10-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shoki MIYATA ,  Takanori MATSUZAKI

IPC: H01L23/528 ,  H01L23/532 ,  H01L29/40 ,  H10B10/00

Abstract: A semiconductor device with large memory capacity, a semiconductor device which can be miniaturized or highly integrated, a highly reliable semiconductor device, a semiconductor device with low power consumption, or a semiconductor device with high operating speed is provided. A first insulating layer, a second conductive layer, a second insulating layer, and a third conductive layer are provided over a first conductive layer in this order and each include an opening portion reaching the first conductive layer. In the opening portion of the second conductive layer, a third insulating layer, a first charge-accumulation layer, a fourth insulating layer, an oxide semiconductor layer, a fifth insulating layer, a second charge-accumulation layer, a sixth insulating layer, and a fourth conductive layer are provided in this order from a sidewall of the opening portion. The first conductive layer and the third conductive layer function as a source electrode or a drain electrode of a transistor. The fourth conductive layer functions as a first control gate. The second conductive layer functions as a second control gate.

公开(公告)号：US20230018223A1

公开(公告)日：2023-01-19

申请号：US17847241

申请日：2022-06-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shoki MIYATA ,  Yuto YAKUBO ,  Yoshiyuki KUROKAWA

IPC: H03K19/096 ,  H03M1/46 ,  H03K19/20

Abstract: A semiconductor device with reduced power consumption can be provided. The semiconductor device includes a first transistor and a second transistor. The first transistor is a p-channel transistor including silicon in a channel formation region and the second transistor is an n-channel transistor including a metal oxide in a channel formation region. The metal oxide includes indium, an element M (e.g., gallium), and zinc. A gate of the first transistor is electrically connected to a gate of the second transistor, and one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor. The first transistor and the second transistor can each operate in a subthreshold region.

公开(公告)号：US20230188094A1

公开(公告)日：2023-06-15

申请号：US17923653

申请日：2021-05-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuto YAKUBO ,  Shoki MIYATA ,  Akio SUZUKI ,  Takayuki IKEDA

IPC: H03D7/14

CPC classification number: H03D7/1458 ,  H01L29/78648

Abstract: A novel semiconductor device is provided. The semiconductor device includes a mixer circuit and a bias circuit. The mixer circuit includes a voltage-to-current conversion portion, a current switch portion, and a current-to-voltage conversion portion. The bias circuit includes a bias supply portion and a first transistor. The voltage-to-current conversion portion includes a second transistor and a third transistor. The bias supply portion has a function of outputting a bias voltage to be supplied to a gate of the second transistor and a gate of the third transistor. One of a source and a drain of the first transistor is electrically connected to the gate of the second transistor and the gate of the third transistor. The first transistor is turned off when the bias voltage is supplied, and the first transistor is turned on when the supply of the bias voltage is stopped.

公开(公告)号：US20230130800A1

公开(公告)日：2023-04-27

申请号：US17914498

申请日：2021-03-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yuto YAKUBO ,  Takayuki IKEDA ,  Shoki MIYATA ,  Hiroshi KADOMA ,  Kaori OGITA

IPC: H01M10/615 ,  H01M10/0525 ,  H01M10/48 ,  H01M10/63 ,  H01M10/625

Abstract: A control system for a secondary battery which is less affected by the ambient temperature by performing temperature control of the secondary battery is provided. A control system for a secondary battery which is less affected by the ambient temperature and in which a plurality of kinds of secondary batteries are used for temperature control is achieved and mounted on a vehicle. Specifically, when the ambient temperature is low, some of second secondary batteries are heated by self-heating of a first secondary battery. After the second secondary batteries are sufficiently heated, the rest of the second secondary batteries are heated in stages by self-heating of the some of the second secondary batteries whose temperature has been increased. Whether the some or all of the second secondary batteries are sufficiently heated can be confirmed if the temperatures of a plurality of temperature sensors provided in the second secondary batteries are within the operating temperature range of the second secondary batteries. For example, with the use of a temperature sensing terminal (T terminal) for a temperature sensor, a switch is closed when the internal temperature of the secondary batteries is out of the operating temperature range.