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公开(公告)号：US20180053459A1
公开(公告)日：2018-02-22
申请号：US15673693
申请日：2017-08-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shuji FUKAI
CPC classification number: G09G3/2018 , G09G3/2003 , G09G3/3688 , G09G2300/0426 , G09G2320/066 , G09G2330/023
Abstract: To provide a display device with high display quality, an eye-friendly display device, a display device with low power consumption, a display device with a reduced change in voltage written to a pixel, or a novel display device. In the display device, a first image signal in which one of grayscale levels of a first pixel and an adjacent second pixel is near white and the other is near black is written. The first image signal is compared with a second image signal. When the grayscale levels of the second image signal written to the first pixel and the second pixel are halftone, the second image signal is written an odd number of times greater than or equal to three times. When the grayscale levels of the second image signal written to the first pixel and the second pixel are near white or near black, the second image signal is written once. The interval between the writing of the first image signal and the writing of the second image signal is longer than or equal to 1 second and shorter than or equal to 10,000 hours.
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公开(公告)号：US20210150994A1
公开(公告)日：2021-05-20
申请号：US16628059
申请日：2018-06-29
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shuji FUKAI , Takayuki IKEDA
Abstract: Provided is a display system with which visibility can be improved.
The display system includes an imaging device, a control device, and a display device. The imaging device includes first pixels arranged in a matrix, and the display device includes second pixels arranged in a matrix. The imaging device has a function of generating first image data on the basis of the illuminance of light emitted to the first pixels. The control device has a function of forming a histogram on the basis of the first image data and dividing the histogram into two or more illuminance ranges. The control device has a function of converting the gray levels which are included in the first image data as information and correspond to the illuminance of the light emitted to the first pixels, thereby generating second image data obtained by performing dynamic range compression on the first image data. The compressibility for the dynamic range compression is calculated for each illuminance range by the control device on the basis of the value of integral in each illuminance range of the histogram.-
公开(公告)号：US20180350316A1
公开(公告)日：2018-12-06
申请号：US16040884
申请日：2018-07-20
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Ryo HATSUMI , Shuji FUKAI , Daisuke KUBOTA
IPC: G09G3/36
CPC classification number: G09G3/3688 , G02F2001/134372 , G09G3/3614 , G09G3/3648 , G09G2320/103 , G09G2330/021
Abstract: To provide an information processing system allowing eye-friendly display. The information processing system includes a liquid crystal display device (LCD) as a display unit. An image can be displayed in the LCD by at least two driving methods: a first driving method in which data is sequentially rewritten every frame; and a second driving method in which rewriting of data is stopped after data is rewritten once or more times at the same refresh rate as the first driving method. After the display by the second driving method, each pixel is inversely driven plural times by a signal with an amplitude greater than or equal to 80% and less than or equal to 100% of the maximum amplitude of the data signal, whereby degradation of a liquid crystal material is repaired.
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公开(公告)号：US20220173737A1
公开(公告)日：2022-06-02
申请号：US17441804
申请日：2020-03-12
Applicant: Semiconductor Energy Laboratory Co., Ltd
Inventor： Hiroki INOUE , Munehiro KOZUMA , Takeshi AOKI , Shuji FUKAI , Fumika AKASAWA , Sho NAGAO
Abstract: A semiconductor device is provided; the semiconductor device includes unipolar transistors. A steady-state current does not flow in the semiconductor device. The semiconductor device uses a high-level potential and a low-level potential to express a high level and a low level, respectively. The semiconductor device includes unipolar transistors, a capacitor, first and second input terminals, and an output terminal. To the second input terminal, a signal is input whose logic is inverted from the logic of a signal input to the first input terminal. The semiconductor device has a circuit structure called bootstrap in which two unipolar transistors are connected in series between the high-level potential and the low-level potential and a capacitor is provided between an output terminal and a gate of one of the two transistors. A delay is caused between the gate of the transistor and the signal output from the output terminal, whereby the bootstrap can be certainly performed.
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公开(公告)号：US20140347588A1
公开(公告)日：2014-11-27
申请号：US14278664
申请日：2014-05-15
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Ryo HATSUMI , Shuji FUKAI , Daisuke KUBOTA
IPC: G02F1/1343
Abstract: The liquid crystal display device includes a first substrate, a second substrate, and a liquid crystal layer between the first substrate and the second substrate. The first substrate includes a transistor including an oxide semiconductor film including a channel formation region; a pixel electrode electrically connected to the transistor; an insulating layer in contact with the pixel electrode; and a first common electrode in contact with the insulating layer. The second substrate faces the first substrate and includes a second common electrode. A negative liquid crystal material is used for the liquid crystal layer. The specific resistivity of the liquid crystal material is greater than or equal to 1.0×1013 Ω·cm and less than or equal to 1.0×1016 Ω·cm.
Abstract translation: 液晶显示装置包括在第一基板和第二基板之间的第一基板，第二基板和液晶层。 第一基板包括包括包括沟道形成区域的氧化物半导体膜的晶体管; 电连接到晶体管的像素电极; 与像素电极接触的绝缘层; 以及与绝缘层接触的第一公共电极。 第二基板面向第一基板并且包括第二公共电极。 液晶层使用负极性的液晶材料。 液晶材料的电阻率大于或等于1.0×1013＆OHgr·cm，小于等于1.0×1016＆OHgr·cm。
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Patent Agency Ranking
公开(公告)号：US20240364343A1
公开(公告)日：2024-10-31
申请号：US18766726
申请日：2024-07-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hiroki INOUE , Munehiro KOZUMA , Takeshi AOKI , Shuji FUKAI , Fumika AKASAWA , Shintaro HARADA , Sho NAGAO
IPC: H03K19/094 , H01L27/06
CPC classification number: H03K19/094 , H01L27/0629
Abstract: A semiconductor device using unipolar transistors, in which high and low levels are expressed using high and low power supply potentials, is provided. The semiconductor device includes four transistors, two capacitors, two wirings, two input terminals, and an output terminal. A source or a drain of the first transistor and a source or a drain of the fourth transistor are electrically connected to the first wiring. A gate of the fourth transistor is electrically connected to the first input terminal, and a gate of the second transistor is electrically connected to the second input terminal. A source or a drain of the second transistor and a source or a drain of the third transistor are electrically connected to the second wiring. The first transistor, the second transistor, and the two capacitors are electrically connected to the output terminal.
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公开(公告)号：US20230353110A1
公开(公告)日：2023-11-02
申请号：US17910057
申请日：2021-03-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kei TAKAHASHI , Takayuki IKEDA , Shuji FUKAI , Shunpei YAMAZAKI
IPC: H03F3/72 , H03F3/217 , H01L29/786 , H01L27/06
CPC classification number: H03F3/72 , H03F3/2171 , H01L29/78693 , H01L27/0629 , H03F2203/7227
Abstract: A small semiconductor device is provided. A semiconductor device with low power consumption is provided. A semiconductor device with a high degree of integration is provided. The semiconductor device includes a first transistor, an insulating layer over the first transistor, a conductive layer, and a gate driver; part of the conductive layer is provided to be embedded in the insulating layer; the gate driver includes a second transistor and a third transistor; the second transistor and the third transistor are stacked and provided over the first transistor; the second transistor and the third transistor each contain a metal oxide in a channel formation region; one of a source and a drain of the second transistor and one of a source and a drain of the third transistor are electrically connected to a gate of the first transistor through the conductive layer; the gate driver is supplied with a first potential and a second potential; and the gate driver has a function of selecting the first potential or the second potential and supplying the selected potential to the gate of the first transistor.
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8.发明申请公开(公告)号：US20250087684A1
公开(公告)日：2025-03-13
申请号：US18798072
申请日：2024-08-08
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shuji FUKAI , Kazutaka KURIKI , Yumiko YONEDA , Yosiharu ASADA , Kazuya SHIMADA
IPC: H01M4/525 , C01G53/00 , H01M4/04 , H01M10/0525 , H01M10/0569
Abstract: A method for forming a positive electrode active material applicable to a lithium-ion battery having excellent charge and discharge characteristics even in a low-temperature environment is provided. The method for forming a positive electrode active material includes: a first step of heating lithium cobalt oxide with a median diameter of less than or equal to 10 μm; a second step of mixing a fluorine source and a magnesium source with the lithium cobalt oxide subjected to the first step, thereby forming a first mixture; a third step of heating the first mixture; a fourth step of mixing a nickel source and an aluminum source with the first mixture subjected to the third step, thereby forming a second mixture; and a fifth step of heating the second mixture. The third step and the fifth step are performed in a state where the first mixture is held to have a thickness of less than or equal to 2.0 mm in a first setter. The first step, the third step, and the fifth step are performed in an atmosphere containing oxygen.
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公开(公告)号：US20230100524A1
公开(公告)日：2023-03-30
申请号：US17795619
申请日：2021-02-08
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Takayuki IKEDA , Kei TAKAHASHI , Shuji FUKAI , Shunpei YAMAZAKI
IPC: H01M10/42 , H10B12/00 , H01L27/12 , H01L29/786 , H01M50/574 , H01M10/44 , H01M10/48
Abstract: A battery management circuit, a battery protection circuit, a power storage device, a semiconductor device, a vehicle, and an electronic device, or the like with a novel structure, a low power consumption structure, or a highly integrated structure is provided. The semiconductor device includes a first transistor comprising a first conductor and a first semiconductor over the first conductor, a first insulator over the first transistor, a second conductor provided in an opening of the first insulator, a second transistor over the first insulator, and a third conductor over the second transistor. The first conductor has a function of one of a source electrode and a drain electrode of the first transistor. The first semiconductor and the second conductor overlap each other. The second conductor and the third conductor overlap each other. The third conductor and the second transistor overlap each other. The first semiconductor and the second transistor are electrically connected to each other through the second conductor and the third conductor.
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公开(公告)号：US20190339577A1
公开(公告)日：2019-11-07
申请号：US16515223
申请日：2019-07-18
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Ryo HATSUMI , Shuji FUKAI , Daisuke KUBOTA
IPC: G02F1/1343
Abstract: The liquid crystal display device includes a first substrate, a second substrate, and a liquid crystal layer between the first substrate and the second substrat. The first substrate includes a transistor including an oxide semiconductor film including a channel formation region; a pixel electrode electrically connected to the transistor; an insulating layer in contact with the pixel electrode; and a first common electrode in contact with the insulating layer. The second substrate faces the first substrate and includes a second common electrode. A negative liquid crystal material is used for the liquid crystal layer. The specific resistivity of the liquid crystal material is greater than or equal to 1.0×1013 Ω·cm and less than or equal to 1.0×1016 Ω·cm.
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