公开(公告)号：US20230155032A1

公开(公告)日：2023-05-18

申请号：US17910372

申请日：2021-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yasuhiro JINBO ,  Yuji EGI ,  Fumito ISAKA ,  Shuntaro KOCHI ,  Masahiro TAKAHASHI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/66969

Abstract: A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third insulator over the first insulator and the second insulator, a fourth insulator over the third insulator, a fifth insulator that is over the oxide and is located between the first conductor and the second conductor; a sixth insulator over the fifth insulator; a seventh insulator over the sixth insulator, and a third conductor over the seventh insulator. The third conductor includes a region overlapping with the oxide, the fifth insulator has a region that is in contact with each of the oxide, the first conductor, the second conductor, and the first to fourth insulators, and the sixth insulator contains hydrogen, nitrogen, oxygen, and silicon.

公开(公告)号：US20230269949A1

公开(公告)日：2023-08-24

申请号：US18043669

申请日：2021-08-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Hitoshi KUNITAKE ,  Yuji EGI ,  Masahiro TAKAHASHI ,  Shuntaro KOCHI

IPC: H10B53/30 ,  H10B53/10 ,  H01L29/786 ,  H01L29/66

CPC classification number: H10B53/30 ,  H10B53/10 ,  H01L29/78696 ,  H01L29/7869 ,  H01L29/6675

Abstract: A material having favorable ferroelectricity is provided. An embodiment of the present invention is a metal oxide film including a first layer and a second layer. The first layer contains first oxygen and hafnium, and the second layer contains second oxygen and zirconium. The hafnium and the zirconium are bonded to each other with the first oxygen positioned therebetween, and the second oxygen is bonded to the zirconium.

公开(公告)号：US20220277815A1

公开(公告)日：2022-09-01

申请号：US17637671

申请日：2020-08-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunsuke HOSOUMI ,  Shuntaro KOCHI ,  Kunihiko SUZUKI

IPC: G16C20/70 ,  H01L51/50 ,  H05B33/14 ,  G06N5/04

Abstract: A property prediction system is provided. An input portion, a processing portion, an arithmetic portion, and an output portion are included; the input portion has a function of supplying the structure of a light-emitting device or the properties of the light-emitting device; the processing portion has a function of generating a learning data set or data that is used for property prediction and a function of quantifying the molecular structure of an organic compound; the arithmetic portion has a function of performing supervised learning on the basis of the learning data set and a function of making an inference of the properties of the light-emitting device from the data on the basis of the learning result of the supervised learning; and the output portion has a function of providing the result of the inference. Thus, the properties of the light-emitting device including a layer containing an organic compound are predicted.