公开(公告)号：US20160027922A1

公开(公告)日：2016-01-28

申请号：US14873249

申请日：2015-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kei TAKAHASHI ,  Yoshiaki ITO

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/417 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969

Abstract: The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.

Abstract translation: 半导体器件包括在衬底上的第一导电层; 覆盖所述第一导电层的氧化物半导体层; 在与所述氧化物半导体层上的所述第一导电层不重叠的区域中的第二导电层; 覆盖氧化物半导体层和第二导电层的绝缘层; 以及在绝缘层上至少包括不与第一导电层或第二导电层重叠的区域的区域中的第三导电层。

公开(公告)号：US20150279929A1

公开(公告)日：2015-10-01

申请号：US14677180

申请日：2015-04-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kei TAKAHASHI ,  Yoshiaki ITO

IPC: H01L29/06 ,  H01L29/04 ,  H01L29/24 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1251 ,  H01L29/045 ,  H01L29/0611 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66477 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.

Abstract translation: 本发明的目的是提供一种具有新的生产半导体材料和新结构的半导体器件。 半导体器件包括：衬底上的第一导电层，覆盖第一导电层的第一绝缘层，与第一导电层的一部分重叠的第一绝缘层上的氧化物半导体层，并且在表面部分中具有晶体区域 形成为与氧化物半导体层接触的第二和第三导电层，覆盖氧化物半导体层和第二和第三导电层的绝缘层，以及绝缘层上的与氧化物半导体层的一部分重叠的第四导电层 。

公开(公告)号：US20150108959A1

公开(公告)日：2015-04-23

申请号：US14580279

申请日：2014-12-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kei TAKAHASHI ,  Yoshiaki ITO ,  Hiroki INOUE ,  Tatsuji NISHIJIMA

IPC: H02M3/156

CPC classification number: H02M3/156 ,  H01L27/12 ,  H01L27/1225 ,  H01L29/7869 ,  H02M3/155

Abstract: A DC converter circuit having high reliability is provided. The DC converter circuit includes: an inductor configured to generate electromotive force in accordance with a change in flowing current; a transistor including a gate, a source, and a drain, which is configured to control generation of the electromotive force in the inductor by being on or off; a rectifier in a conducting state when the transistor is off; and a control circuit configured to control on and off of the transistor. The transistor includes an oxide semiconductor layer whose hydrogen concentration is less than or equal to 5×1019 atoms/cm3 as a channel formation layer.

Abstract translation: 提供了具有高可靠性的DC转换器电路。 DC转换器电路包括：电感器，被配置为根据流动电流的变化产生电动势; 包括栅极，源极和漏极的晶体管，其被配置为通过导通或关断来控制电感器中的电动势的产生; 当晶体管截止时处于导通状态的整流器; 以及被配置为控制晶体管的导通和截止的控制电路。 晶体管包括作为沟道形成层的氢浓度小于或等于5×1019原子/ cm3的氧化物半导体层。

公开(公告)号：US20160260839A1

公开(公告)日：2016-09-08

申请号：US15153119

申请日：2016-05-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kei TAKAHASHI ,  Yoshiaki ITO

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L27/1251 ,  H01L29/045 ,  H01L29/0611 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66477 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.

公开(公告)号：US20140162402A1

公开(公告)日：2014-06-12

申请号：US14182726

申请日：2014-02-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kei TAKAHASHI ,  Yoshiaki ITO

IPC: H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1251 ,  H01L29/045 ,  H01L29/0611 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66477 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.

Abstract translation: 本发明的目的是提供一种具有新的生产半导体材料和新结构的半导体器件。 半导体器件包括：衬底上的第一导电层，覆盖第一导电层的第一绝缘层，与第一导电层的一部分重叠的第一绝缘层上的氧化物半导体层，并且在表面部分中具有晶体区域 形成为与氧化物半导体层接触的第二和第三导电层，覆盖氧化物半导体层和第二和第三导电层的绝缘层，以及绝缘层上的与氧化物半导体层的一部分重叠的第四导电层 。