公开(公告)号：US20220328910A1

公开(公告)日：2022-10-13

申请号：US17840658

申请日：2022-06-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junya GOTO ,  Ai NAKAGAWA ,  Yuika SATO

IPC: H01M50/116 ,  H01G11/80 ,  H01G11/78 ,  H01G11/82

Abstract: A repeatedly bendable power storage device. A highly reliable power storage device. A long-life power storage device. A repeatedly bendable electronic device. A flexible electronic device. The power storage device includes a film, a positive electrode, and a negative electrode. The film includes a plurality of projections. A difference between the maximum height and the minimum height of a surface of the film is greater than or equal to 0.15 mm and less than 0.8 mm. The modulus of rigidity of the film is less than 6.5×109 N. The film includes a metal layer. The thickness of the metal layer is greater than or equal to 5 μm and less than or equal to 200 μm. The positive electrode and the negative electrode are surrounded by the film.

公开(公告)号：US20170033326A1

公开(公告)日：2017-02-02

申请号：US15215621

申请日：2016-07-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junya GOTO ,  Ai NAKAGAWA ,  Yuika SATO

IPC: H01M2/02 ,  H01G11/56 ,  H01G11/20 ,  H01G11/06 ,  H01M10/42 ,  H01M10/0525

Abstract: A repeatedly bendable power storage device. A highly reliable power storage device. A long-life power storage device. A repeatedly bendable electronic device. A flexible electronic device. The power storage device includes a film, a positive electrode, and a negative electrode. The film includes a plurality of projections. A difference between the maximum height and the minimum height of a surface of the film is greater than or equal to 0.15 mm and less than 0.8 mm. The modulus of rigidity of the film is less than 6.5×109 N. The film includes a metal layer. The thickness of the metal layer is greater than or equal to 5 μm and less than or equal to 200 μm. The positive electrode and the negative electrode are surrounded by the film.

Abstract translation: 一种可反复弯曲的蓄电装置。 高可靠性的蓄电装置。 长寿命蓄电装置。 反复弯曲的电子设备。 灵活的电子设备。 蓄电装置包括膜，正极和负极。 该胶片包括多个突起。 薄膜表面的最大高度和最小高度之差大于或等于0.15mm且小于0.8mm。 膜的刚度模量小于6.5×10 9 N。该膜包括金属层。 金属层的厚度大于或等于5μm且小于等于200μm。 正极和负极被膜包围。

公开(公告)号：US20190296334A1

公开(公告)日：2019-09-26

申请号：US16436067

申请日：2019-06-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junya GOTO ,  Mako MOTOYOSHI ,  Yuika SATO ,  Takahiro KAWAKAMI

IPC: H01M4/36 ,  H01M4/70 ,  H01M4/62 ,  H01M4/134 ,  H01M4/485 ,  H01M4/04 ,  H01M4/131 ,  H01M4/587 ,  H01M4/133

Abstract: A negative electrode and a secondary battery including the negative electrode are provided. A plurality of projections and depressions are provided in a negative electrode active material layer and a negative electrode current collector. The plurality of projections and depressions in the negative electrode active material layer absorb expansion of the negative electrode active material and suppress deformation thereof. The plurality of projections and depressions in the negative electrode current collector suppress deformation of the negative electrode current collector caused by expansion and contraction of the negative electrode active material.

公开(公告)号：US20170250383A1

公开(公告)日：2017-08-31

申请号：US15438960

申请日：2017-02-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junya GOTO ,  Ai NAKAGAWA ,  Yuika SATO

IPC: H01M2/02 ,  H01G11/80 ,  H01M10/42 ,  H01M10/0525 ,  H01M2/08

Abstract: A repeatedly bendable power storage device is provided. A highly reliable power storage device is provided. A long-life power storage device is provided. A repeatedly bendable electronic device is provided. A flexible electronic device is provided. The power storage device includes a positive electrode, a negative electrode, and an exterior body wrapping the positive electrode and the negative electrode. The exterior body includes a metal layer and a resin layer. The thickness of the metal layer in at least part of an outer edge of the exterior body is smaller than that in a region other than the outer edge. The exterior body has a plurality of slits in the outer edge.

公开(公告)号：US20240087820A1

公开(公告)日：2024-03-14

申请号：US18237584

申请日：2023-08-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junya GOTO ,  Ai NAKAGAWA ,  Yuika SATO

IPC: H01G11/78 ,  H01G11/80 ,  H01G11/82 ,  H01M50/119 ,  H01M50/133

CPC classification number: H01G11/78 ,  H01G11/80 ,  H01G11/82 ,  H01M50/119 ,  H01M50/133 ,  H01M10/425

Abstract: A repeatedly bendable power storage device. A highly reliable power storage device. A long-life power storage device. A repeatedly bendable electronic device. A flexible electronic device. The power storage device includes a film, a positive electrode, and a negative electrode. The film includes a plurality of projections. A difference between the maximum height and the minimum height of a surface of the film is greater than or equal to 0.15 mm and less than 0.8 mm. The modulus of rigidity of the film is less than 6.5×109 N. The film includes a metal layer. The thickness of the metal layer is greater than or equal to 5 μm and less than or equal to 200 μm. The positive electrode and the negative electrode are surrounded by the film.

公开(公告)号：US20200295314A1

公开(公告)日：2020-09-17

申请号：US16890049

申请日：2020-06-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junya GOTO ,  Ai NAKAGAWA ,  Yuika SATO

IPC: H01M2/02 ,  H01G11/80 ,  H01G11/78 ,  H01G11/82

Abstract: A repeatedly bendable power storage device. A highly reliable power storage device. A long-life power storage device. A repeatedly bendable electronic device. A flexible electronic device. The power storage device includes a film, a positive electrode, and a negative electrode. The film includes a plurality of projections. A difference between the maximum height and the minimum height of a surface of the film is greater than or equal to 0.15 mm and less than 0.8 mm. The modulus of rigidity of the film is less than 6.5×109 N. The film includes a metal layer. The thickness of the metal layer is greater than or equal to 5 μm and less than or equal to 200 μm. The positive electrode and the negative electrode are surrounded by the film.

公开(公告)号：US20170338470A1

公开(公告)日：2017-11-23

申请号：US15535596

申请日：2015-12-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Nobuhiro INOUE ,  Hiroyuki MIYAKE ,  Yuika SATO

IPC: H01M4/36 ,  H01M4/58 ,  H01M4/505 ,  H01M4/04 ,  H01M4/48 ,  H01M4/38 ,  H01M10/0525 ,  H01M4/525

CPC classification number: H01M4/364 ,  H01M4/0404 ,  H01M4/0459 ,  H01M4/0461 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/386 ,  H01M4/483 ,  H01M4/505 ,  H01M4/525 ,  H01M4/5825 ,  H01M4/62 ,  H01M10/052 ,  H01M10/0525 ,  H01M2004/027 ,  Y02T10/7011

Abstract: Although a material containing silicon attracts attention as a high-capacity negative electrode active material, it has a problem of having a large irreversible capacity at the initial charge and discharge cycle.As a negative electrode active material, a particle which is a mixture of silicon, lithium metasilicate, and lithium oxide is used. Because lithium metasilicate and lithium oxide are already contained in the particle of the negative electrode active material, a compound containing lithium and oxygen (lithium orthosilicate and lithium metasilicate), which is a cause of the irreversible capacity at the initial charge, is not generated any more. This enables a negative electrode active material with a small irreversible capacity.

公开(公告)号：US20160190576A1

公开(公告)日：2016-06-30

申请号：US14972796

申请日：2015-12-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Nobuhiro INOUE ,  Takuya HIROHASHI ,  Yuika SATO

IPC: H01M4/485 ,  H01M10/0525

CPC classification number: H01M4/483 ,  C01B33/113 ,  H01M4/131 ,  H01M10/0525 ,  Y02E60/122

Abstract: Silicon oxide which is an oxide containing at least silicon, in which part of silicon is replaced by boron, aluminum, or gallium, is provided.

Abstract translation: 提供氧化硅，其是至少含有硅的氧化物，其中硅的一部分被硼，铝或镓代替。

公开(公告)号：US20160126541A1

公开(公告)日：2016-05-05

申请号：US14921126

申请日：2015-10-23

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Junya GOTO ,  Mako MOTOYOSHI ,  Yuika SATO ,  Takahiro KAWAKAMI

IPC: H01M4/36 ,  H01M4/587 ,  H01M4/04 ,  H01M4/485 ,  H01M4/131 ,  H01M4/133

CPC classification number: H01M4/364 ,  H01M4/0445 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/485 ,  H01M4/587 ,  H01M4/625 ,  H01M4/70 ,  H01M2004/027

Abstract: A negative electrode and a secondary battery including the negative electrode are provided. A plurality of projections and depressions are provided in a negative electrode active material layer and a negative electrode current collector. The plurality of projections and depressions in the negative electrode active material layer absorb expansion of the negative electrode active material and suppress deformation thereof. The plurality of projections and depressions in the negative electrode current collector suppress deformation of the negative electrode current collector caused by expansion and contraction of the negative electrode active material.

Abstract translation: 设置负极和包含负极的二次电池。 在负极活性物质层和负极集电体中设置有多个凹凸。 负极活性物质层中的多个凹凸吸收负极活性物质的膨胀，抑制其变形。 负极集电体中的多个突起和凹陷抑制由负极活性物质的膨胀和收缩引起的负极集电体的变形。