公开(公告)号：US20180135158A1

公开(公告)日：2018-05-17

申请号：US15850758

申请日：2017-12-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Masakazu MURAKAMI

IPC: C23C14/00 ,  C23C14/50 ,  H05B33/10 ,  H01L51/00 ,  C23C14/56 ,  C23C14/04 ,  C23C14/24 ,  C23C14/12

CPC classification number: C23C14/00 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  C23C14/243 ,  C23C14/246 ,  C23C14/505 ,  C23C14/564 ,  C23C14/568 ,  H01L51/001 ,  H05B33/10

Abstract: The invention provides an evaporation apparatus, which is able to improve an efficiency of evaporation materials, uniformity of deposited films, and throughput of the evaporation process. Disclosed is an evaporation source holder, which is installed in an evaporation chamber and configured to hold an evaporation material, and a moving mechanism, which is configured to move the evaporation source holder during evaporation of the evaporation material. The evaporation apparatus is further characterized by a shutter over the evaporation source holder, a filter over the shutter, and a heater surrounding the filter.

公开(公告)号：US20160118445A1

公开(公告)日：2016-04-28

申请号：US14989195

申请日：2016-01-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masaaki HIROKI ,  Masakazu MURAKAMI ,  Hideaki KUWABARA

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3211 ,  H01L27/32 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/5228 ,  H01L51/5234 ,  H01L51/5253 ,  H01L51/5281

Abstract: A light emitting device having a high definition, a high aperture ratio and a high reliability is provided. The present invention realizes a high definition and a high aperture ratio for a flat panel display of full colors using luminescent colors of red, green and blue without being dependent upon the film formation method and deposition precision of an organic compound layer by forming the laminated sections 21, 22 by means of intentionally and partially overlapping different organic compound layers of adjacent light emitting elements. Moreover, the protective film 32a containing hydrogen is formed and the drawback in the organic compound layer is terminated with hydrogen, thereby realizing the enhancement of the brightness and the reliability.

Abstract translation: 提供了具有高清晰度，高开口率和高可靠性的发光器件。 本发明利用红色，绿色和蓝色的发光颜色实现全色平板显示器的高清晰度和高开口率，而不依赖于成膜方法和通过形成层叠部分的有机化合物层的沉积精度 21,22通过有意和部分地重叠相邻发光元件的不同有机化合物层。 此外，形成含有氢的保护膜32a，并且用氢终止有机化合物层的缺点，从而实现亮度的提高和可靠性。

公开(公告)号：US20160133683A1

公开(公告)日：2016-05-12

申请号：US15000710

申请日：2016-01-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Junya MARUYAMA ,  Yumiko OHNO ,  Masakazu MURAKAMI ,  Toshiji HAMATANI ,  Hideaki KUWABARA ,  Shunpei YAMAZAKI

IPC: H01L27/32 ,  H01L27/12 ,  H01L51/52

CPC classification number: H01L27/3276 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/3272 ,  H01L29/66757 ,  H01L29/78603 ,  H01L31/105 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/5212 ,  H01L51/5253 ,  H01L2221/68368

Abstract: (OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials.(MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.

Abstract translation: （目的）本发明的目的是提供一种减轻半导体器件及其制造方法，该方法是将待剥离的层粘贴到各种基材上。 （解决问题的手段）在本发明中，在基板上形成被剥离层，然后将具有蚀刻阻挡膜的密封基板上的粘合材料粘贴在被剥离层上，然后仅除去 密封衬底通过蚀刻或抛光。 剩余的蚀刻阻挡膜用作阻挡膜。 此外，可以将磁片作为粘贴部件粘贴。

公开(公告)号：US20160056298A1

公开(公告)日：2016-02-25

申请号：US14930081

申请日：2015-11-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kiyoshi KATO ,  Masakazu MURAKAMI

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/45 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45

Abstract: A semiconductor device with significantly low off-state current is provided. An oxide semiconductor material in which holes have a larger effective mass than electrons is used. A transistor is provided which includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer including a hole whose effective mass is 5 or more times, preferably 10 or more times, further preferably 20 or more times that of an electron in the oxide semiconductor layer, a source electrode layer in contact with the oxide semiconductor layer, and a drain electrode layer in contact with the oxide semiconductor layer.

公开(公告)号：US20130200368A1

公开(公告)日：2013-08-08

申请号：US13751783

申请日：2013-01-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO. LTD.

Inventor： Shunpei YAMAZAKI ,  Kiyoshi KATO ,  Masakazu MURAKAMI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45

Abstract: A semiconductor device with significantly low off-state current is provided. An oxide semiconductor material in which holes have a larger effective mass than electrons is used. A transistor is provided which includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer including a hole whose effective mass is 5 or more times, preferably 10 or more times, further preferably 20 or more times that of an electron in the oxide semiconductor layer, a source electrode layer in contact with the oxide semiconductor layer, and a drain electrode layer in contact with the oxide semiconductor layer.

Abstract translation: 提供具有非常低的截止电流的半导体器件。 使用空穴具有比电子更大的有效质量的氧化物半导体材料。 提供了一种晶体管，其包括栅极电极层，栅极绝缘层，氧化物半导体层，其有效质量为有效质量的5倍以上，优选为10倍以上，更优选为20倍以上 氧化物半导体层，与氧化物半导体层接触的源电极层以及与氧化物半导体层接触的漏电极层。