公开(公告)号：US20250169114A1

公开(公告)日：2025-05-22

申请号：US19023954

申请日：2025-01-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI

IPC: H10D30/67 ,  H01L23/522 ,  H01L23/544

Abstract: A novel material is provided. A composite oxide semiconductor in which a first region and a plurality of second regions are mixed is provided. Note that the first region contains at least indium, an element M (the element M is one or more of Al, Ga, Y, and Sn), and zinc, and the plurality of second regions contain indium and zinc. Since the plurality of second regions have a higher concentration of indium than the first region, the plurality of second regions have a higher conductivity than the first region. An end portion of one of the plurality of second regions overlaps with an end portion of another one of the plurality of second regions. The plurality of second regions are three-dimensionally surrounded with the first region.

公开(公告)号：US20250160004A1

公开(公告)日：2025-05-15

申请号：US19024240

申请日：2025-01-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Motomu KURATA ,  Masashi TSUBUKU

IPC: H10D99/00 ,  H01L21/02 ,  H10D30/67 ,  H10D86/01 ,  H10D86/40 ,  H10D86/60 ,  H10F39/00

Abstract: The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

公开(公告)号：US20250159941A1

公开(公告)日：2025-05-15

申请号：US19023764

申请日：2025-01-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H10D30/67 ,  H10D99/00

Abstract: The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The first conductive layer and the second conductive layer are connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.

公开(公告)号：US20250159939A1

公开(公告)日：2025-05-15

申请号：US19020084

申请日：2025-01-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Jun KOYAMA

IPC: H10D30/67 ,  H01L21/02 ,  H10D62/80 ,  H10D86/40 ,  H10D86/60 ,  H10D99/00

Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

公开(公告)号：US20250159938A1

公开(公告)日：2025-05-15

申请号：US19019828

申请日：2025-01-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA

IPC: H10D30/67 ,  H10D64/68

Abstract: A transistor that is to be provided has such a structure that a source electrode layer and a drain electrode layer between which a channel formation region is sandwiched has regions projecting in a channel length direction at lower end portions, and an insulating layer is provided, in addition to a gate insulating layer, between the source and drain electrode layers and a gate electrode layer. In the transistor, the width of the source and drain electrode layers is smaller than that of an oxide semiconductor layer in the channel width direction, so that an area where the gate electrode layer overlaps with the source and drain electrode layers can be made small. Further, the source and drain electrode layers have regions projecting in the channel length direction at lower end portions.

公开(公告)号：US20250151393A1

公开(公告)日：2025-05-08

申请号：US19008793

申请日：2025-01-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshiharu HIRAKATA ,  Takashi HAMADA ,  Kohei YOKOYAMA ,  Yasuhiro JINBO ,  Tetsuji ISHITANI ,  Daisuke KUBOTA

IPC: H10D86/01 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1362 ,  G02F1/1368 ,  H10D30/67 ,  H10D86/40 ,  H10D86/60 ,  H10K50/842 ,  H10K50/844 ,  H10K59/38 ,  H10K59/40 ,  H10K71/50 ,  H10K102/00

Abstract: A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate.

公开(公告)号：US20250133824A1

公开(公告)日：2025-04-24

申请号：US18834712

申请日：2023-01-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tatsuya ONUKI ,  Kiyoshi KATO ,  Hitoshi KUNITAKE ,  Ryota HODO ,  Shunpei YAMAZAKI

IPC: H10D86/40 ,  H10D30/67 ,  H10D64/68

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. First to second transistors share a first metal oxide over a first insulator and a first conductor over the first metal oxide; the first transistor includes a second conductor and a second insulator which are over the first metal oxide and a third conductor over the second insulator; the second transistor includes a fourth conductor and a third insulator which are over the first metal oxide and a fifth conductor over the third insulator; a side surface of the first insulator includes a portion in contact with the fourth conductor; an end portion of the fourth conductor includes a portion positioned outward from an end portion of the first insulator; the second insulator is positioned between the first conductor and the second conductor; the metal oxide and the third conductor overlap with each other with the second insulator therebetween; the third insulator is positioned between the first conductor and the fourth conductor; and the metal oxide and the fifth conductor overlap with each other with the third insulator therebetween.

公开(公告)号：US20250132251A1

公开(公告)日：2025-04-24

申请号：US18989697

申请日：2024-12-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akio SUZUKI ,  Atsushi MIYAGUCHI ,  Shunpei YAMAZAKI

IPC: H01L23/528 ,  H01L23/31 ,  H01L23/367 ,  H10D30/67

Abstract: A semiconductor device having a novel structure is provided. The semiconductor device includes a silicon substrate and a device provided above the silicon substrate. The device includes a transistor and a conductor. The transistor includes a metal oxide in a channel formation region. Conductivity is imparted to the silicon substrate. The conductor is electrically connected to each of a drain of the transistor and the silicon substrate through an opening provided in the device. Heat of the drain of the transistor can be efficiently released through the silicon substrate.

公开(公告)号：US20250124962A1

公开(公告)日：2025-04-17

申请号：US19002110

申请日：2024-12-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: G11C11/405 ,  G11C16/04 ,  H10B12/00 ,  H10B41/20 ,  H10B41/70 ,  H10B69/00 ,  H10D30/60 ,  H10D30/67 ,  H10D62/40 ,  H10D62/80 ,  H10D62/83 ,  H10D84/03 ,  H10D84/90 ,  H10D86/40 ,  H10D86/60 ,  H10D87/00 ,  H10D88/00

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

公开(公告)号：US20250123483A1

公开(公告)日：2025-04-17

申请号：US18985601

申请日：2024-12-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yosuke TSUKAMOTO ,  Kiyoshi KATO ,  Tatsuya ONUKI ,  Yoshiaki OIKAWA ,  Kensuke YOSHIZUMI

IPC: G02B27/00 ,  G02B27/01

Abstract: Provided is a multifunctional display device or a multifunctional electronic device. Provided is a display device or electronic device with high visibility. Provided is a display device or electronic device with low power consumption. The electronic device includes a housing, a display device, a system unit, a camera, a secondary battery, a reflective surface, and a wearing tool. The system unit and the secondary battery are each positioned inside the housing. The system unit includes a charging circuit unit. The charging circuit unit is configured to control charging of the secondary battery. The system unit is configured to perform first processing based on imaging data of the camera. The first processing includes at least one of gesture operation, head tracking, and eye tracking. The system unit is configured to generate image data based on the first processing. The display device is configured to display the image data.