公开(公告)号：US20170222185A1

公开(公告)日：2017-08-03

申请号：US15306558

申请日：2015-04-17

申请人： SHARP KABUSHIKI KAISHA

发明人： Kazuki MATSUNAGA ,  Katsuhiro KIKUCHI ,  Shinichi KAWATO ,  Takashi OCHI ,  Satoshi INOUE ,  Yuhki KOBAYASHI ,  Eiichi MATSUMOTO ,  Masahiro ICHIHARA ,  Hirokazu SHIMEKI

IPC分类号： H01L51/52 ,  H01L27/32 ,  H01L51/56 ,  C23C14/24

CPC分类号： H01L51/5259 ,  C23C14/042 ,  C23C14/24 ,  C23C14/564 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L51/0096 ,  H01L51/56 ,  Y02E10/549

摘要： An organic EL display substrate includes a light-emitting region containing a plurality of pixels and a getter member. The getter member is disposed in at least part of the area around the light-emitting region.

公开(公告)号：US20170081758A1

公开(公告)日：2017-03-23

申请号：US15310499

申请日：2015-05-07

申请人： SHARP KABUSHIKI KAISHA

发明人： Satoshi INOUE ,  Katsuhiro KIKUCHI ,  Shinichi KAWATO ,  Takashi OCHI ,  Yuhki KOBAYASHI ,  Kazuki MATSUNAGA ,  Eiichi MATSUMOTO ,  Masahiro ICHIHARA

IPC分类号： C23C16/04 ,  H01L51/56 ,  C23C16/52

CPC分类号： C23C16/042 ,  C23C14/04 ,  C23C14/042 ,  C23C14/24 ,  C23C14/56 ,  C23C16/52 ,  H01L51/50 ,  H01L51/56

摘要： A mask for a vapor deposition apparatus includes an outer frame; a first bar disposed on an inner side of the outer frame and fixed to the outer frame; and a pattern forming portion disposed on the outer frame and the first bar and fixed to the outer frame. The pattern forming portion includes a plurality of mask openings for pattern formation. Each of the plurality of mask openings is disposed along a first direction. The plurality of mask openings are disposed in a second direction orthogonal to the first direction. The first bar is positioned between adjacent two mask openings among the plurality of mask openings when viewed along a third direction orthogonal to the first direction and the second direction, and is in contact with the pattern forming portion.

公开(公告)号：US20160308131A1

公开(公告)日：2016-10-20

申请号：US15102132

申请日：2014-11-27

申请人： SHARP KABUSHIKI KAISHA

发明人： Yuhki KOBAYASHI ,  Katsuhiro KIKUCHI ,  Shinichi KAWATO ,  Takashi OCHI ,  Satoshi INOUE ,  Kazuki MATSUNAGA ,  Eiichi MATSUMOTO ,  Masahiro ICHIHARA

IPC分类号： H01L51/00 ,  H01L51/56 ,  C23C14/04 ,  C23C14/24 ,  C23C16/50 ,  C23C16/04

CPC分类号： H01L51/0011 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  C23C14/54 ,  C23C14/564 ,  C23C16/042 ,  C23C16/4412 ,  C23C16/50 ,  H01L51/001 ,  H01L51/0012 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/533

摘要： The present invention relates to a vapor deposition device for forming a film on a substrate, including: a vapor deposition chamber; a vapor deposition unit including a vapor deposition mask provided with an opening for pattern formation; and a transport mechanism that is configured to transfer at least one of the substrate and the vapor deposition unit relative to the other in a first direction perpendicular to the normal direction of the vapor deposition mask and that is configured to cause the substrate to rest temporarily at a resting position relative to the vapor deposition unit. The substrate includes a vapor-deposition-target region, and the region does not overlap the opening of the vapor deposition mask when the substrate is at the resting position. The vapor deposition chamber is provided with a first vent and a second vent.

摘要翻译： 本发明涉及一种用于在基板上形成膜的气相沉积装置，包括：蒸镀室; 气相沉积单元，其包括设置有用于图案形成的开口的气相沉积掩模; 以及传送机构，其构造成在垂直于所述蒸镀掩模的法线方向的第一方向上相对于另一方转移所述基板和所述气相沉积单元中的至少一个，并且被配置为使所述基板临时静置 相对于气相沉积单元的静止位置。 衬底包括气相沉积目标区域，并且当衬底处于静止位置时，该区域不与蒸镀掩模的开口重叠。 气相沉积室设置有第一通气口和第二通气口。

公开(公告)号：US20170130320A1

公开(公告)日：2017-05-11

申请号：US15321791

申请日：2015-06-19

申请人： Sharp Kabushiki Kaisha

发明人： Yuhki KOBAYASHI ,  Katsuhiro KIKUCHI ,  Shinichi KAWATO ,  Takashi OCHI ,  Kazuki MATSUNAGA ,  Satoshi INOUE ,  Eiichi MATSUMOTO ,  Masahiro ICHIHARA

IPC分类号： C23C14/04 ,  H01L51/00 ,  C23C14/24

CPC分类号： C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  H01L51/001 ,  H01L51/0011 ,  H05B33/10

摘要： The present invention provides a mask for production of an organic EL element, an apparatus for producing an organic EL element, and a method for producing an organic EL element which can give reduced luminance unevenness and eased restrictions in the production apparatus. The mask of the present invention includes first to fourth opening regions arranged in a staggered pattern, the first, second, third, and fourth opening regions arranged in the given order in a first direction, the first, second, third, and fourth opening regions respectively including first, second, third, and fourth mask openings in a second direction perpendicular to the first direction, the mask including no mask openings on the side of the first opening region opposite to the third opening region, the first and second mask openings each having a shorter length in the first direction than each of the third and fourth mask openings.

公开(公告)号：US20170125488A1

公开(公告)日：2017-05-04

申请号：US15317156

申请日：2015-06-11

申请人： Sharp Kabushiki Kaisha

发明人： Shinichi KAWATO ,  Katsuhiro KIKUCHI ,  Satoshi INOUE ,  Takashi OCHI ,  Yuhki KOBAYASHI ,  Kazuki MATSUNAGA ,  Eiichi MATSUMOTO ,  Masahiro ICHIHARA

IPC分类号： H01L27/32 ,  H01L51/56 ,  H01L51/52

CPC分类号： H01L27/3211 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/0085 ,  H01L51/0583 ,  H01L51/424 ,  H01L51/50 ,  H01L51/5012 ,  H01L51/5016 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5084 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/52 ,  H01L51/56 ,  H01L2251/558 ,  Y02E10/549

摘要： In an organic EL element including a positive electrode, a negative electrode, and a light emitting layer (recombination layer) provided between the positive electrode and the negative electrode, an electron transport layer and an electron injection layer are provided between the light emitting layer and the negative electrode, and are sequentially arranged in the direction from the light emitting layer to the negative electrode. A hole injection layer and a hole transport layer are provided between the light emitting layer and the positive electrode, and are sequentially arranged in the direction from the positive electrode to the light emitting layer. A buffer layer for suppressing the electron trapping properties is provided between the light emitting layer and the hole transport layer.

公开(公告)号：US20170012201A1

公开(公告)日：2017-01-12

申请号：US15114316

申请日：2014-11-28

申请人： SHARP KABUSHIKI KAISHA

发明人： Takashi OCHI ,  Satoshi INOUE ,  Yuhki KOBAYASHI ,  Kazuki MATSUNAGA ,  Shinichi KAWATO ,  Katsuhiro KIKUCHI ,  Masahiro ICHIHARA ,  Eiichi MATSUMOTO

IPC分类号： H01L51/00 ,  C23C16/455 ,  H01L51/56 ,  C23C16/50

CPC分类号： H01L51/0002 ,  C23C14/042 ,  C23C14/044 ,  C23C14/12 ,  C23C14/24 ,  C23C14/546 ,  C23C16/455 ,  C23C16/50 ,  H01L51/0008 ,  H01L51/5012 ,  H01L51/56

摘要： The present invention provides a vapor deposition apparatus, a vapor deposition method, and a method for producing an organic electroluminescent element which can control the vapor deposition rate on the substrate in the entire vapor deposition region with excellent precision. The vapor deposition apparatus of the present invention that forms a film on a substrate includes a first thickness monitor; and a vapor deposition unit including a vapor deposition source, the apparatus being configured to perform vapor deposition while controlling the distance between a portion of the vapor deposition source designed to eject a vaporized material and a surface of the substrate on which the vapor deposition is performed, based on a measurement result from the first thickness monitor.

摘要翻译： 本发明提供一种气相沉积设备，气相沉积方法和一种有机电致发光元件的制造方法，该有机电致发光元件可以精确地控制整个气相沉积区域中的基板上的气相沉积速率。 在基板上形成膜的本发明的蒸镀装置具有：第一厚度监视器; 以及包括气相沉积源的气相沉积单元，所述装置被配置为执行气相沉积，同时控制设计成喷射气化材料的气相沉积源的一部分与其上进行气相沉积的基板的表面之间的距离 基于来自第一厚度监视器的测量结果。

公开(公告)号：US20160149134A1

公开(公告)日：2016-05-26

申请号：US14900541

申请日：2014-05-01

申请人： SHARP KABUSHIKI KAISHA

发明人： Satoshi INOUE ,  Katsuhiro KIKUCHI ,  Shinichi KAWATO ,  Takashi OCHI ,  Yuhki KOBAYASHI ,  Masahiro ICHIHARA ,  Eiichi MATSUMOTO

IPC分类号： H01L51/00 ,  H01L27/32 ,  H01L51/50

CPC分类号： H01L51/0011 ,  C23C14/042 ,  C23C14/24 ,  H01L27/3244 ,  H01L51/5012

摘要： The present invention provides a method for producing an organic EL element capable of shortening the film formation time while suppressing an increase in the blur width; and an organic EL display device. The method is for producing an organic EL element by scanning vapor deposition, in which one or more vapor deposition sources each are provided with ejection orifices that face the respective openings of a limiting plate, and the ejection orifices facing the same opening are spaced from each other to give a sum of distributions represented by the following formula (1) of 1 or smaller, cos(ni+3)θi×ri/Ri  (1) wherein Ri represents a maximum film-formation rate of an ejection orifice i among the ejection orifices facing the same opening, i represents an integer of 1 or greater and m or smaller, m represents the number of the ejection orifices facing the same opening, ri represents the actual film-formation rate of the ejection orifice i in the vapor deposition step, ni is an n value, which is zero or more, of the ejection orifice i, and θi represents an angle formed by a main film formation direction and a segment connecting the ejection orifice i and a point within the film formation region.

摘要翻译： 本发明提供了一种制造能够缩短成膜时间同时抑制模糊宽度增加的有机EL元件的方法; 和有机EL显示装置。 该方法是通过扫描气相沉积来生产有机EL元件，其中一个或多个气相沉积源各自具有面对限制板的相应开口的喷射口，并且面向相同开口的喷射孔与每个 另外给出由下式（1）表示的分布为1或更小的分布之和，cos（ni + 3）＆thetas; i×ri / Ri（1）其中Ri表示喷射口i的最大成膜速率 在面向相同开口的喷射孔中，i表示1以上且m以下的整数，m表示与同一开口面对的喷射孔的数量，ri表示喷射孔i的实际成膜速度 气相沉积步骤，ni是喷射口i的零度以上的n值，θ表示由主成膜方向形成的角度和连接喷射孔i的部分和 成膜区。

公开(公告)号：US20170218500A1

公开(公告)日：2017-08-03

申请号：US15500856

申请日：2015-07-24

申请人： Sharp Kabushiki Kaisha

发明人： Takashi OCHI ,  Shinichi KAWATO ,  Yuhki KOBAYASHI ,  Kazuki MATSUNAGA ,  Katsuhiro KIKUCHI ,  Masahiro ICHIHARA ,  Eiichi MATSUMOTO

IPC分类号： C23C14/24

CPC分类号： C23C14/24 ,  C23C14/12 ,  C23C14/243 ,  C23C14/246 ,  H01L51/001 ,  H01L51/50 ,  H01L51/56 ,  H05B33/10

摘要： A vapor deposition device is provided with first and second vapor deposition sources, a common pipe that is connected to the first and second vapor deposition sources, a vapor deposition particle emission source that is connected to the common pipe and emits vapor deposition particles from each of the first and second vapor deposition sources, an exhaust valve that is connected to the vapor deposition particle emission source, and an exhaust pump that is connected to the exhaust valve.

公开(公告)号：US20160155944A1

公开(公告)日：2016-06-02

申请号：US14903603

申请日：2014-03-04

申请人： SHARP KABUSHIKI KAISHA

发明人： Yoshiyuki ISOMURA ,  Katsuhiro KIKUCHI ,  Shinichi KAWATO ,  Satoshi INOUE ,  Takashi OCHI ,  Yuhki KOBAYASHI ,  Eiichi MATSUMOTO ,  Masahiro ICHIHARA

IPC分类号： H01L51/00 ,  C23C16/458

CPC分类号： H01L51/0011 ,  C23C14/042 ,  C23C14/12 ,  C23C16/458 ,  H01L27/3241 ,  H01L51/50 ,  H01L51/5012

摘要： The vapor deposition apparatus employs scanning vapor deposition, and includes a limiting component including a first plate portion; a second plate portion provided with a space from the first plate portion; and a joint portion combining the first plate portion with the second plate portion, the first plate portion being provided with an first opening, the second plate portion being provided with an second opening that faces the first opening, the vapor deposition apparatus including a first space between the first opening and the second opening, the vapor deposition apparatus including a second space between the first plate portion and the second plate portion, the first space being connected to the second space, the vapor deposition apparatus including a third space that is in the outside of the limiting component, the second space being connected to the third space.

摘要翻译： 气相沉积装置采用扫描气相沉积，并包括限制部件，其包括第一板部分; 第二板部，其从所述第一板部设置有空间; 以及将所述第一板部与所述第二板部组合的接合部，所述第一板部设置有第一开口，所述第二板部设置有与所述第一开口对置的第二开口，所述蒸镀装置具有第一空间 在第一开口和第二开口之间，气相沉积装置包括在第一板部分和第二板部分之间的第二空间，第一空间连接到第二空间，气相沉积装置包括位于第一开口和第二开口之间的第三空间， 在限制部件外部，第二空间连接到第三空间。

公开(公告)号：US20160122861A1

公开(公告)日：2016-05-05

申请号：US14897182

申请日：2014-03-30

申请人： SHARP KABUSHIKI KAISHA

发明人： Yuhki KOBAYASHI ,  Katsuhiro KIKUCHI ,  Shinichi KAWATO ,  Satoshi INOUE ,  Takashi OCHI ,  Eiichi MATSUMOTO ,  Masahiro ICHIHARA

IPC分类号： C23C14/04 ,  C23C16/04

CPC分类号： C23C14/042 ,  C23C14/044 ,  C23C14/12 ,  C23C14/24 ,  C23C16/042 ,  H01L51/0011 ,  H01L51/56

摘要： A vapor deposition unit (1) includes a vapor deposition mask (50), a vapor deposition source (10), and a limiting plate unit (20). The limiting plate unit (20) includes (i) a plurality of first limiting plates (32) separated from each other in an X axis direction and (ii) a plurality of second limiting plates (42) disposed directly above the first limiting plates (32) in a plan view and separated from each other in the X axis direction. At least two second limiting plates (42) are arranged in the X axis direction for each first limiting plate (32).

摘要翻译： 气相沉积单元（1）包括气相沉积掩模（50），气相沉积源（10）和限制板单元（20）。 限制板单元（20）包括（i）在X轴方向上彼此分离的多个第一限制板（32）和（ii）多个第二限位板（42），其设置在第一限位板 32），并且在X轴方向上彼此分离。 对于每个第一限位板（32），沿X轴方向布置至少两个第二限制板（42）。