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公开(公告)号：US20190157360A1
公开(公告)日：2019-05-23
申请号：US16319840
申请日：2017-07-21
Applicant: Sharp Kabushiki Kaisha
Inventor： Yuto TSUKAMOTO , Seiichi MITSUI , Shinichi KAWATO , Satoshi INOUE , Yuhki KOBAYASHI , Takashi OCHI
Abstract: In this manufacturing method, in a blue fluorescent light-emitting layer formation step, a blue fluorescent light-emitting layer is formed in both a subpixel and a subpixel; in a green fluorescent light-emitting layer formation step, a green fluorescent light-emitting layer is formed in both the subpixel and a subpixel; and in a red light-emitting layer formation step, a red light-emitting layer is formed in both the subpixel and a subpixel. In at least two of the abovementioned steps, linear vapor deposition is performed using a slit mask having an opening that is provided so as to extend across a plurality of pixels.
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公开(公告)号：US20180371604A1
公开(公告)日：2018-12-27
申请号：US16063295
申请日：2016-11-25
Applicant: Sharp Kabushiki Kaisha
Inventor： Satoshi INOUE , Shinichi KAWATO , Yuhki KOBAYASHI
Abstract: On a vapor deposition target surface of a vapor deposition target substrate placed on a substrate tray in a vapor deposition device, display regions on which vapor deposition particles are to be deposited are arranged in alignment to be apart from each other in a direction parallel with a scanning direction, and the substrate tray includes a blocking part configured to block the vapor deposition particles to be deposited onto regions adjacent to the display regions in a direction parallel with the scanning direction. This prevents a degree of freedom in designing of the vapor deposition target substrate from being restricted even in performing scan vapor deposition.
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3.发明申请公开(公告)号：US20180187299A1
公开(公告)日：2018-07-05
申请号：US15741296
申请日：2016-07-21
Applicant: Sharp Kabushiki Kaisha
Inventor： Shinichi KAWATO , Katsuhiro KIKUCHI , Manabu NIBOSHI , Satoshi INOUE , Yuhki KOBAYASHI
IPC: C23C14/24
Abstract: Provided is a line source that can achieve uniform film thickness distribution and also achieve high use efficiency of vapor deposition materials. A line source (10) has slit nozzles (1) having a slit nozzle's length-to-width ratio of 4 to 50, a width of 1 mm to 5 mm, and a depth of 5 mm to 20 mm.
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公开(公告)号：US20180175296A1
公开(公告)日：2018-06-21
申请号：US15575430
申请日：2016-06-28
Applicant: Sharp Kabushiki Kaisha
Inventor： Yuhki KOBAYASHI , Shinichi KAWATO , Manabu NIBOSHI , Satoshi INOUE
CPC classification number: H01L51/0011 , C23C14/042 , C23C14/228 , C23C14/24 , H01L51/001 , H01L51/56
Abstract: A vapor deposition device (100) includes a vapor deposition source (30), a vapor deposition mask (10), a limiting plate unit (20), and a gas supply mechanism (50). The limiting plate unit (20) is disposed between the vapor deposition source and the vapor deposition mask. The gas supply mechanism (50) causes a gas wall (501) to be formed in a non-opening portion (13). The non-opening portion (13) is a portion between the vapor deposition mask and the limiting plate unit. The non-opening portion (13) is positioned between limiting-plate openings (21) of the limiting plate unit, which are adjacent to each other, and is positioned between mask opening regions (11) of the vapor deposition mask, which are adjacent to each other in plan view.
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公开(公告)号：US20170218500A1
公开(公告)日：2017-08-03
申请号：US15500856
申请日：2015-07-24
Applicant: Sharp Kabushiki Kaisha
Inventor： Takashi OCHI , Shinichi KAWATO , Yuhki KOBAYASHI , Kazuki MATSUNAGA , Katsuhiro KIKUCHI , Masahiro ICHIHARA , Eiichi MATSUMOTO
IPC: C23C14/24
CPC classification number: C23C14/24 , C23C14/12 , C23C14/243 , C23C14/246 , H01L51/001 , H01L51/50 , H01L51/56 , H05B33/10
Abstract: A vapor deposition device is provided with first and second vapor deposition sources, a common pipe that is connected to the first and second vapor deposition sources, a vapor deposition particle emission source that is connected to the common pipe and emits vapor deposition particles from each of the first and second vapor deposition sources, an exhaust valve that is connected to the vapor deposition particle emission source, and an exhaust pump that is connected to the exhaust valve.
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Patent Agency Ranking
公开(公告)号：US20190360086A1
公开(公告)日：2019-11-28
申请号：US15779102
申请日：2017-01-26
Applicant: Sharp Kabushiki Kaisha
Inventor： Shinichi KAWATO , Manabu NIBOSHI , Eiji KOIKE , Satoshi INOUE , Tsuyoshi INOUE , Yuhki KOBAYASHI
Abstract: A vapor deposition mask including a metallic substrate provided with a plurality of openings for passing vapor deposition particles, wherein at least a portion of the plurality of openings are structured by one or more opening groups in which the plurality of openings are repeatedly arranged in accordance with a constant rule, and a plurality of protrusions of identical height are arranged to support the entire substrate from one side, and are provided only outside the opening group formation region.
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公开(公告)号：US20180119268A1
公开(公告)日：2018-05-03
申请号：US15567616
申请日：2016-04-15
Applicant: Sharp Kabushiki Kaisha
Inventor： Shinichi KAWATO , Yuhki KOBAYASHI , Kazuo TAKIZAWA
CPC classification number: C23C14/042 , C23C14/225 , C23C14/24 , H01L51/001 , H01L51/0011 , H01L51/50 , H01L51/56 , H05B33/10
Abstract: A vapor deposition device (1) includes: a vapor deposition source (30); a vapor deposition mask (10) having a plurality of mask openings (12); and a limiting plate unit (20) having a plurality of limiting plates (22). The limiting plate unit is configured such that, in a cross section parallel to an X axis direction, (i) the limiting plate unit includes at least one limiting plate opening (23), each of which is formed between the limiting plates and opposite to a respective one of at least one target region (202) of a target substrate (200) such that the at least one limiting plate opening and the at least one target region are in one-to-one correspondence and (ii) the limiting plate unit prevents entry into the mask openings by vapor deposition particles (310) whose angle of entry is less than a shadow critical angle.
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公开(公告)号：US20170198387A1
公开(公告)日：2017-07-13
申请号：US15314980
申请日：2015-06-03
Applicant: Sharp Kabushiki Kaisha
Inventor： Kazuki MATSUNAGA , Katsuhiro KIKUCHI , Shinichi KAWATO , Takashi OCHI , Yuhki KOBAYASHI
IPC: C23C14/24
CPC classification number: C23C14/24 , C23C14/042 , C23C14/044
Abstract: An evaporation apparatus includes: a substrate holding section configured to hold a substrate; an evaporation mask having an opening part at a position which is opposite to one surface of the substrate; an evaporation source configured to supply the one surface with evaporated particles via the opening part and to form a film of the evaporated particles on the one surface exposed from the opening part; and a film thickness correction means configured to block a portion of an ejection path of the evaporated particles from the evaporation source toward the opening part and configured to correct a thickness of the film by changing a position at which the ejection path is blocked over time.
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公开(公告)号：US20170081758A1
公开(公告)日：2017-03-23
申请号：US15310499
申请日：2015-05-07
Applicant: SHARP KABUSHIKI KAISHA
Inventor： Satoshi INOUE , Katsuhiro KIKUCHI , Shinichi KAWATO , Takashi OCHI , Yuhki KOBAYASHI , Kazuki MATSUNAGA , Eiichi MATSUMOTO , Masahiro ICHIHARA
CPC classification number: C23C16/042 , C23C14/04 , C23C14/042 , C23C14/24 , C23C14/56 , C23C16/52 , H01L51/50 , H01L51/56
Abstract: A mask for a vapor deposition apparatus includes an outer frame; a first bar disposed on an inner side of the outer frame and fixed to the outer frame; and a pattern forming portion disposed on the outer frame and the first bar and fixed to the outer frame. The pattern forming portion includes a plurality of mask openings for pattern formation. Each of the plurality of mask openings is disposed along a first direction. The plurality of mask openings are disposed in a second direction orthogonal to the first direction. The first bar is positioned between adjacent two mask openings among the plurality of mask openings when viewed along a third direction orthogonal to the first direction and the second direction, and is in contact with the pattern forming portion.
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公开(公告)号：US20170033322A1
公开(公告)日：2017-02-02
申请号：US15101285
申请日：2014-09-17
Applicant: Sharp Kabushiki Kaisha
Inventor： Kazuki MATSUNAGA , Katsuhiro KIKUCHI , Shinichi KAWATO , Satoshi INOUE , Yuhki KOBAYASHI , Takashi OCHI
CPC classification number: H01L51/56 , H01L27/3211 , H01L51/0017 , H01L51/5012
Abstract: The method for producing an organic EL display panel includes, in the given order, the steps of: forming a first light-emitting layer by forming a film from a luminescent material of a first luminescent color in a first pixel; performing the etching treatment to remove, while leaving the first light-emitting layer to remain, a thin film of the luminescent material of the first luminescent color which adhered to the second pixel in the step; forming a second light-emitting layer by forming a film from a luminescent material of a second luminescent color different from the first luminescent color in the second pixel; and performing the etching treatment to remove, while leaving the second light-emitting layer to remain, a thin film of the luminescent material of the second luminescent color which adhered to the first pixel in the step.
Abstract translation: 有机EL显示面板的制造方法按照给定的顺序包括以下步骤：通过在第一像素中由第一发光颜色的发光材料形成膜而形成第一发光层; 进行蚀刻处理以在留下第一发光层的同时留下第一发光颜色的发光材料的薄膜，该薄膜在步骤中粘附到第二像素; 通过在第二像素中从与第一发光颜色不同的第二发光颜色的发光材料形成膜形成第二发光层; 并且在所述步骤中执行所述蚀刻处理以除去粘附到所述第一像素的所述第二发光颜色的发光材料的薄膜，同时留下所述第二发光层。
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