Light emitting element, light emitting device, and apparatus for producing light emitting element

    公开(公告)号:US11342524B2

    公开(公告)日:2022-05-24

    申请号:US17041137

    申请日:2018-03-30

    Abstract: A light-emitting element is provided to improve light emission efficiency of a light-emitting element. The light-emitting element includes: a first electrode; a second electrode; a quantum dot layer provided between the first electrode and the second electrode, in which quantum dots are layered; and a hole-transport layer provided between the quantum dot layer and the first electrode, wherein the hole-transport layer includes a plurality of layers each containing a different material, the plurality of layers of the hole-transport layer each have an ionization potential increasing from the first electrode toward the quantum dot layer, and, among the plurality of layers of the hole-transport layer, a layer in contact with the quantum dot layer is higher in ionization potential than the quantum dot layer.

    Detection device and method of controlling detection device

    公开(公告)号:US10996183B2

    公开(公告)日:2021-05-04

    申请号:US16319449

    申请日:2017-05-23

    Abstract: A detection device includes a plurality of detection units formed on a semiconductor circuit, a correction capacitive element that indicates a correction capacitance value for correcting detected capacitance values detected by the detection units, a difference acquisition circuit that acquires a difference value between each of the detected capacitance values and the correction capacitance value, and a conversion circuit that converts the difference value into a digital signal. The correction capacitive element, the difference acquisition circuit, and the conversion circuit are formed on the semiconductor circuit.

    Light-emitting element and light-emitting device

    公开(公告)号:US12075643B2

    公开(公告)日:2024-08-27

    申请号:US17433446

    申请日:2019-02-26

    CPC classification number: H10K50/15 H10K50/16

    Abstract: A light-emitting element (2) includes: an anode (4); a hole transport layer (6); a light-emitting layer (8) containing quantum dots (16); an electron transport layer (10); and a cathode (12), arranged in this order, the light-emitting element further including a charge blocking layer (14) either between the light-emitting layer and the hole transport layer or between the light-emitting layer and the electron transport layer or both, wherein the charge blocking layer contains, as an element: a transition metal element that is a component of an oxide semiconductor; at least one selected from Al, Mg, and Si; and O.

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