公开(公告)号：US20170256423A1

公开(公告)日：2017-09-07

申请号：US15450542

申请日：2017-03-06

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yuki SAITO ,  Konosuke HAYASHI ,  Takashi OOTAGAKI ,  Yuji NAGASHIMA

IPC: H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67017 ,  H01L21/67253

Abstract: According to the embodiment, a substrate treating device 10 for treating a semiconductor wafer W using an etchant L containing hydrofluoric acid and nitric acid includes a storage tank 210 that stores the etchant L; a concentration sensor 256 that measures a concentration of nitrous acid in the etchant L; an alcohol feeding line 280 that feeds IPA to the etchant L and maintains the concentration of nitrous acid to a predetermined value or more; and a substrate treating unit 100 that feeds the etchant L in the storage tank 210 to the semiconductor wafer W. The substrate treating device can improve the etching efficiency by efficiently generating nitrous acid, and thereby producing an etchant having a nitrous acid concentration suitable for etching.

公开(公告)号：US20170287744A1

公开(公告)日：2017-10-05

申请号：US15468577

申请日：2017-03-24

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Nobuo KOBAYASHI ,  Takeki KOGAWA ,  Katsuhiro YAMAZAKI ,  Yuki SAITO

IPC: H01L21/67 ,  G02F1/1333 ,  H01L21/306

Abstract: According to one embodiment, a substrate processing apparatus includes a tank that stores a treatment liquid; a liquid level pipe connected to the tank such that the treatment liquid stored in the tank flows therein, and configured such that the liquid level of the treatment liquid therein moves according to increase and decrease of the treatment liquid in the tank; a liquid level sensor that detects the liquid level in the liquid level pipe; an air supply pipe for supplying a gas to a piping space above the liquid level in the liquid level pipe; and a controller that determines whether there is erroneous detection of the liquid level sensor based on a detection result obtained by the liquid level sensor in response to the movement of the liquid level in the liquid level pipe caused by supply of the gas to the piping space from the air supply pipe.