-
公开(公告)号：US20160062372A1
公开(公告)日：2016-03-03
申请号：US14939008
申请日：2015-11-12
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor： Konosuke HAYASHI , Takashi OOTAGAKI , Emi MATSUI
CPC classification number: G05D11/13 , B05B12/006 , B05B13/0242 , B05C5/02 , G05D9/12 , H01L21/67017 , H01L21/6708
Abstract: A liquid feeding device that feeds a treatment liquid to a treating device and also recovers the treatment liquid for re-feeding, include feeding tanks having an exhaust passage and an overflow line, and can be switched to one of a feeding mode in which the treatment liquid is fed and a standby mode in which the feeding tank is on standby while accommodating the treatment liquid; a feeding mechanism that feeds the treatment liquid to the treating device from the feeding tank in the feeding mode among the plurality of feeding tanks; a recovery mechanism that recovers and returns the treatment liquid excessive in the treatment device to the feeding tank in the feeding mode; and an on-off mechanism provided in each of the plurality of feeding tanks to block the exhaust passage and the overflow line is provided.
Abstract translation: 将处理液供给到处理装置并回收用于再供给的处理液的液体供给装置包括具有排气通路和溢流管线的供给槽，并且能够切换为进给模式，其中处理 进料液体和备用模式，其中进料罐在容纳处理液体的同时待机; 供给机构，其在所述多个供给槽中以所述供给方式从所述供给槽将所述处理液供给到所述处理装置; 回收机构，其将处理装置中的处理液回收并返回给供给罐; 并且设置在多个供给槽中的每一个中以阻断排气通道和溢流管线的开关机构。
-
公开(公告)号：US20170278729A1
公开(公告)日：2017-09-28
申请号：US15512308
申请日：2015-09-30
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor： Konosuke HAYASHI , Takashi OOTAGAKI
CPC classification number: H01L21/67051 , B08B3/02 , B08B3/08 , B08B3/10 , B08B2203/0288 , H01L21/67028 , H01L21/67034 , H01L21/6708 , H01L21/6715 , H01L21/68728 , H01L21/68785 , H01L21/68792
Abstract: According to one embodiment, a substrate processing apparatus includes: a removing part (D1) configured to remove liquid droplets present in a recess (30); a drain hole (30a) located at the bottom of the recess (30) of a nozzle head (32), and configured to discharge the liquid droplets as a target to be removed out of the recess (30); and a controller configured to control the discharge state of a gas discharge nozzle (33) such that there is a period in which a gas is discharged from the gas discharge nozzle (33) at a flow rate, at which the gas discharged does not reach a surface to be processed of s substrate W, in a period from the end of the rinsing process using a treatment liquid to the start of the drying process using the gas.
-
公开(公告)号：US20140261566A1
公开(公告)日：2014-09-18
申请号：US14212899
申请日：2014-03-14
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor： Konosuke HAYASHI , Masaaki FURUYA , Takashi OOTAGAKI , Yuji NAGASHIMA , Atsushi KINASE , Masahiro ABE
IPC: B08B3/10
CPC classification number: B08B3/10 , H01L21/67028 , H01L21/67034
Abstract: A substrate processing device 10 includes a suction drying unit 65 drying a surface of a substrate W by absorbing and removing a liquid droplet of volatile solvent formed on the surface of the substrate W by a heating operation of a heating unit 64.
Abstract translation: 基板处理装置10包括吸引干燥单元65，其通过加热单元64的加热操作吸收和去除形成在基板W的表面上的挥发性溶剂的液滴来干燥基板W的表面。
-
公开(公告)号：US20170256423A1
公开(公告)日：2017-09-07
申请号：US15450542
申请日：2017-03-06
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor： Yuki SAITO , Konosuke HAYASHI , Takashi OOTAGAKI , Yuji NAGASHIMA
IPC: H01L21/67
CPC classification number: H01L21/6708 , H01L21/67017 , H01L21/67253
Abstract: According to the embodiment, a substrate treating device 10 for treating a semiconductor wafer W using an etchant L containing hydrofluoric acid and nitric acid includes a storage tank 210 that stores the etchant L; a concentration sensor 256 that measures a concentration of nitrous acid in the etchant L; an alcohol feeding line 280 that feeds IPA to the etchant L and maintains the concentration of nitrous acid to a predetermined value or more; and a substrate treating unit 100 that feeds the etchant L in the storage tank 210 to the semiconductor wafer W. The substrate treating device can improve the etching efficiency by efficiently generating nitrous acid, and thereby producing an etchant having a nitrous acid concentration suitable for etching.
-
Patent Agency Ranking
公开(公告)号：US20150273534A1
公开(公告)日：2015-10-01
申请号：US14671278
申请日：2015-03-27
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor： Takashi OOTAGAKI , Konosuke Hayashi , Yosuke Himori
IPC: B08B3/08
CPC classification number: B08B3/08 , H01L21/67051 , H01L21/6708 , H01L21/67248
Abstract: A substrate processing apparatus according to an embodiment includes: a liquid supplier configured to supply a processing liquid to a surface of a substrate; a temperature detector configured to detect a surface temperature of the substrate supplied with the processing liquid by the liquid supplier; a temperature monitor configured to determine whether or not the surface temperature detected by the temperature detector has reached a predetermined temperature; and a controller configured to cause the liquid supplier to stop supplying the processing liquid when the temperature monitor determines that the surface temperature has reached the predetermined temperature.
Abstract translation: 根据实施例的基板处理装置包括：液体供应器，被配置为将处理液体供应到基板的表面; 温度检测器，被配置为检测由所述液体供应器供给的所述处理液的所述基板的表面温度; 温度监视器，被配置为确定由所述温度检测器检测到的表面温度是否达到预定温度; 以及控制器，其被配置为当所述温度监视器确定所述表面温度已经达到所述预定温度时，使所述液体供应器停止供应所述处理液体。
-
公开(公告)号：US20150273491A1
公开(公告)日：2015-10-01
申请号：US14670983
申请日：2015-03-27
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor： Takashi OOTAGAKI , Konosuke HAYASHI
IPC: B05B1/26
CPC classification number: B05B1/265 , B05B3/0409 , B05B3/0486 , B05B3/1064 , B05B13/0235 , B05C5/02 , B05C13/02 , H01L21/67051 , H01L21/6715
Abstract: A substrate treatment apparatus according to the embodiment includes: a nozzle which ejects a treatment liquid onto a treatment target surface of a substrate; a trajectory deflector including a trajectory deflecting surface, which is an annular inclined surface that deflects a traveling direction of the treatment liquid ejected from the nozzle and makes the treatment liquid incident on the treatment target surface, the trajectory deflecting surface having an inclination angle varying in a direction of annular extension of the trajectory deflecting surface; and a position changer which moves an incident position of the treatment liquid on the trajectory deflecting surface in the direction of annular extension of the trajectory deflecting surface.
Abstract translation: 本实施方式的基板处理装置包括：将处理液喷射到基板的处理对象面上的喷嘴; 包括轨迹偏转表面的轨迹偏转器，所述轨迹偏转表面是使从喷嘴喷出的处理液的行进方向偏转并使处理液入射到处理对象面的环状倾斜面，所述轨迹偏转面的倾斜角度变化 轨迹偏转表面的环形延伸方向; 以及位置变换器，其将处理液的入射位置沿轨迹偏转面的环状延伸方向移动到轨迹偏转面上。
-
公开(公告)号：US20160025409A1
公开(公告)日：2016-01-28
申请号：US14773055
申请日：2014-02-28
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor： Kunihiro MIYAZAKI , Konosuke HAYASHI , Takashi OOTAGAKI , Yuji NAGASHIMA
CPC classification number: F26B3/30 , F26B3/28 , F26B5/005 , F26B7/00 , F26B11/18 , H01L21/02057 , H01L21/67034 , H01L21/67115
Abstract: According to one embodiment, a substrate processing apparatus (1) includes a table (4) configured to support a substrate W, a solvent supply unit (8) configured to supply a volatile solvent to a surface of the substrate W on the table (4), and an irradiator (10) configured to emit light to the substrate W, which has been supplied with the volatile solvent, and function as a heater that heats the substrate W such that a gas layer is formed on the surface of the substrate W to make the volatile solvent into a liquid ball. Thus, it is possible to dry the substrate successfully as well as to suppress pattern collapse.
Abstract translation: 根据一个实施例，一种基板处理装置（1）包括：配置成支撑基板W的台（4），配置成将挥发性溶剂供应到工作台（4）上的基板W的表面的溶剂供应单元（8） ）和被配置为向已经供给了挥发性溶剂的基板W发光的照射器（10），并且用作加热基板W的加热器，使得在基板W的表面上形成气体层 使挥发性溶剂成为液体球。 因此，可以成功地干燥基板以及抑制图案塌陷。
-
公开(公告)号：US20140261554A1
公开(公告)日：2014-09-18
申请号：US14212382
申请日：2014-03-14
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor： Konosuke HAYASHI , Masaaki FURUYA , Takashi OOTAGAKI , Yuji NAGASHIMA , Atsushi KINASE , Masahiro ABE
IPC: H01L21/67
CPC classification number: H01L21/6704 , H01L21/67028 , H01L21/67034 , H01L21/67115
Abstract: In a substrate processing device 10 having a heating and drying unit 103 for drying a surface of a substrate W, the heating and drying unit 103 heats upward a vertically downward surface of the substrate W to dry the surface of the substrate by dropping and removing, by gravity, the droplets of the volatile solvent formed on the surface of the substrate W by the heating operation.
Abstract translation: 在具有用于干燥基板W的表面的加热和干燥单元103的基板处理装置10中，加热和干燥单元103向上加热基板W的垂直向下的表面，以通过掉落和去除来干燥基板的表面， 通过重力，通过加热操作形成在基板W的表面上的挥发性溶剂的液滴。
-
公开(公告)号：US20140261549A1
公开(公告)日：2014-09-18
申请号：US14212218
申请日：2014-03-14
Applicant: SHIBAURA MECHATRONICS CORPORATION
Inventor： Konosuke HAYASHI , Masaaki FURUYA , Takashi OOTAGAKI , Yuji NAGASHIMA , Atsushi KINASE , Masahiro ABE
IPC: H01L21/67
CPC classification number: H01L21/67051 , H01L21/67028 , H01L21/67034 , H01L21/6776
Abstract: A substrate processing device 100 includes a cleaning liquid supply unit 114 supplying a cleaning liquid to a surface of a substrate W, a solvent supply unit 115 supplying a volatile solvent to the surface of the substrate W supplied with the cleaning liquid to replace the cleaning liquid on the surface of the substrate W with the volatile solvent, a heating unit 117 heating the substrate W supplied with the volatile solvent, and a drying unit 118 drying the surface of the substrate W by removing a droplet of the volatile solvent produced on the surface of the substrate W by a heating operation of the heating unit 117, and the heating unit 117 and the drying unit 118 are arranged in a course of transportation of the substrate W transported from the solvent supply unit 115.
Abstract translation: 基板处理装置100包括向基板W的表面供给清洗液的清洗液供给部114，向供给清洗液的基板W的表面供给挥发性溶剂的溶剂供给部115，以更换清洗液 在具有挥发性溶剂的基板W的表面上，加热单元117，加热供给挥发性溶剂的基板W，以及干燥单元118，通过除去表面上产生的挥发性溶剂的液滴来干燥基板W的表面 通过加热单元117的加热操作，加热单元117和干燥单元118在从溶剂供应单元115输送的基板W的输送过程中布置。
-
-
-
-
-
-
-
-
Search Results
9
records
(took 0.021 seconds)
