公开(公告)号：US20230154748A1

公开(公告)日：2023-05-18

申请号：US17766771

申请日：2020-10-08

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Miho NIITANI ,  Taishi WAKABAYASHI ,  Kento YAMADA ,  Kazuhiko YOSHIDA

IPC分类号： H01L21/02 ,  H01L21/762 ,  C30B25/18 ,  C30B29/06

CPC分类号： H01L21/02488 ,  H01L21/0217 ,  H01L21/02433 ,  H01L21/02247 ,  H01L21/02381 ,  H01L21/7624 ,  H01L21/02255 ,  C30B25/186 ,  C30B29/06 ,  C30B25/183 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/0262 ,  H01L27/1203

摘要： A method for manufacturing a semiconductor substrate by forming an insulator film and a semiconductor single crystal layer on a surface of a silicon single crystal substrate to manufacture a semiconductor substrate having the semiconductor single crystal layer on the insulator film, the method including at least the steps of: forming a silicon nitride film having an epitaxial relationship with the silicon single crystal substrate on the surface of the silicon single crystal substrate as the insulator film by subjecting the silicon single crystal substrate to a heat treatment under a nitrogen gas-containing atmosphere; and forming the semiconductor single crystal layer on the silicon nitride film by epitaxial growth. This makes it possible to obtain a semiconductor substrate by simple method with high productivity at low cost even when the insulator film provided between the silicon single crystal substrate and the semiconductor single crystal layer is a silicon nitride film.