PROBE GUIDE PLATE AND PROBE DEVICE
    2.
    发明申请

    公开(公告)号:US20170205445A1

    公开(公告)日:2017-07-20

    申请号:US15407427

    申请日:2017-01-17

    IPC分类号: G01R1/073

    CPC分类号: G01R1/07371

    摘要: A probe guide plate includes a first silicon substrate, a first recess portion formed in an upper surface of the first silicon substrate, first through-holes formed in the first silicon substrate at a bottom of the first recess portion, a second silicon substrate directly bonded on the first silicon substrate, a second recess portion formed to face the first recess portion in a lower surface of the second silicon substrate, and second through-holes formed in the second silicon substrate at a bottom of the second recess portion and arranged to correspond to the first through-holes, A notch portion is formed at an upper end portion of an inner wall of each of the first through-holes of the first silicon substrate.

    PROBE GUIDE PLATE AND PROBE APPARATUS
    3.
    发明申请

    公开(公告)号:US20170146569A1

    公开(公告)日:2017-05-25

    申请号:US15356868

    申请日:2016-11-21

    IPC分类号: G01R1/073 G01R31/26

    CPC分类号: G01R1/07371 G01R31/2601

    摘要: A probe guide plate includes: a silicon substrate including one surface and the other surface opposite to the one surface; a through hole formed through the silicon substrate to extend from the one surface of the silicon substrate to the other surface of the silicon substrate; a silicon oxide layer formed on the one surface of the silicon substrate, the other surface of the silicon substrate, and an inner wall surface of the through hole; and a protective insulating layer formed on the silicon oxide layer. The protective insulating layer is formed on at least one of the one surface and the other surface of the silicon substrate via the silicon oxide layer, and partially formed on the inner wall surface of the through hole via the silicon oxide layer.

    Probe guide plate and probe device

    公开(公告)号:US10386387B2

    公开(公告)日:2019-08-20

    申请号:US15404832

    申请日:2017-01-12

    IPC分类号: G01R1/073 G01R3/00

    摘要: A probe guide plate includes a first silicon substrate having first through-holes formed therein, an insulation layer formed on the first silicon substrate and having an opening on a region in which the first through-holes are arranged, a second silicon substrate arranged on the insulation layer and having second through-holes formed at positions corresponding to the first through-holes, and a silicon oxide layer formed on exposed surfaces of the first silicon substrate and the second silicon substrate.

    Probe guide, probe card, and method for probe guide manufacturing

    公开(公告)号:US10139430B2

    公开(公告)日:2018-11-27

    申请号:US15420111

    申请日:2017-01-31

    IPC分类号: G01R31/28 G01R1/073 G01R3/00

    摘要: OBJECTTo improve the strength of a probe guide and improve the abrasion resistance of the probe guide.MEANS FOR SETTLEMENTA guide plate 20 is formed of a silicon plate 22 having guide holes 23 respectively adapted to support contact probes 13, the inner walls of the guide holes 23 include a guide film 25 formed on the inner wall surfaces of corresponding penetration-processed holes 24 of the silicon plate 22, the cross-sectional areas of the penetration-processed holes 24 gradually increase toward a first surface of the silicon plate 22, and the film thickness of the guide film 25 gradually increases toward the first surface of the silicon plate 22. By employing such a configuration, as compared with the tilts of the inner wall surfaces of the penetration-processed holes 24, the tilts of the inner wall surfaces of the guide holes 23 can be suppressed, and the strength of the silicon plate 20 can be improved. Accordingly, the abrasion resistance of a probe guide 100 can be improved.

    Probe Guide, Probe Card, And Method For Probe Guide Manufacturing

    公开(公告)号:US20170242057A1

    公开(公告)日:2017-08-24

    申请号:US15420111

    申请日:2017-01-31

    IPC分类号: G01R1/073 G01R31/28 G01R3/00

    摘要: OBJECTTo improve the strength of a probe guide and improve the abrasion resistance of the probe guide.MEANS FOR SETTLEMENTA guide plate 20 is formed of a silicon plate 22 having guide holes 23 respectively adapted to support contact probes 13, the inner walls of the guide holes 23 include a guide film 25 formed on the inner wall surfaces of corresponding penetration-processed holes 24 of the silicon plate 22, the cross-sectional areas of the penetration-processed holes 24 gradually increase toward a first surface of the silicon plate 22, and the film thickness of the guide film 25 gradually increases toward the first surface of the silicon plate 22. By employing such a configuration, as compared with the tilts of the inner wall surfaces of the penetration-processed holes 24, the tilts of the inner wall surfaces of the guide holes 23 can be suppressed, and the strength of the silicon plate 20 can be improved. Accordingly, the abrasion resistance of a probe guide 100 can be improved.

    Probe guide plate and probe device

    公开(公告)号:US10309988B2

    公开(公告)日:2019-06-04

    申请号:US15407427

    申请日:2017-01-17

    IPC分类号: G01R1/073

    摘要: A probe guide plate includes a first silicon substrate, a first recess portion formed in an upper surface of the first silicon substrate, first through-holes formed in the first silicon substrate at a bottom of the first recess portion, a second silicon substrate directly bonded on the first silicon substrate, a second recess portion formed to face the first recess portion in a lower surface of the second silicon substrate, and second through-holes formed in the second silicon substrate at a bottom of the second recess portion and arranged to correspond to the first through-holes, A notch portion is formed at an upper end portion of an inner wall of each of the first through-holes of the first silicon substrate.

    LIGHT EMITTING DEVICE
    10.
    发明申请

    公开(公告)号:US20210391518A1

    公开(公告)日:2021-12-16

    申请号:US17342841

    申请日:2021-06-09

    IPC分类号: H01L33/62 H01L27/15 H01L33/38

    摘要: A light emitting device includes a ceramic substrate, a light emitting element, and a wiring. The light emitting element is formed on an upper surface of the ceramic substrate. The wiring is arranged inside the ceramic substrate and is electrically and directly connected to the light emitting element. The light emitting element includes a structure in which a lower semiconductor layer, an active layer, and an upper semiconductor layer are sequentially stacked.