公开(公告)号：US20080223440A1

公开(公告)日：2008-09-18

申请号：US12110120

申请日：2008-04-25

申请人： SHURAN SHENG ,  Yong-Kee Chae ,  Soo Young Choi

发明人： SHURAN SHENG ,  Yong-Kee Chae ,  Soo Young Choi

IPC分类号： H01L31/0352 ,  H01L31/04

CPC分类号： H01L31/076 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the same.

公开(公告)号：US20090104733A1

公开(公告)日：2009-04-23

申请号：US11876173

申请日：2007-10-22

申请人： YONG KEE CHAE ,  SOO YOUNG CHOI ,  SHURAN SHENG

发明人： YONG KEE CHAE ,  SOO YOUNG CHOI ,  SHURAN SHENG

IPC分类号： H01L31/18

CPC分类号： H01L31/075 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/03685 ,  H01L31/076 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： Embodiments of the invention as recited in the claims relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. In one embodiment a method of forming a thin film multi-junction solar cell over a substrate is provided. The method comprises positioning a substrate in a reaction zone, providing a gas mixture to the reaction zone, wherein the gas mixture comprises a silicon containing compound and hydrogen gas, forming a first region of an intrinsic type microcrystalline silicon layer on the substrate at a first deposition rate, forming a second region of the intrinsic type microcrystalline silicon layer on the substrate at a second deposition rate higher than the first deposition rate, and forming a third region of the intrinsic type microcrystalline silicon layer on the substrate at a third deposition rate lower than the second deposition rate.