公开(公告)号：US20230227696A1

公开(公告)日：2023-07-20

申请号：US18099031

申请日：2023-01-19

Applicant: SK enpulse Co., Ltd.

Inventor： Seung Chul HONG ,  Deok Su HAN ,  Han Teo PARK ,  Hwan Chul KIM ,  Kyu Hun KIM ,  Eun Sun JOENG

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09G1/02 ,  C09K3/1436 ,  H01L21/3212 ,  H01L21/7684 ,  H01L23/53266

Abstract: The present disclosure is a composition for a semiconductor process applied to a polishing process of a semiconductor wafer and, more specifically, to a semiconductor process involving a polishing process of a semiconductor wafer, wherein the composition includes abrasive particles, and the zeta potential of the abrasive particles is −50 mV to −10 mV at a pH of 6, and the zeta potential change rate represented by Equation 1 below is 6 mV to 30 mV: [Equation 1] Zeta potential change rate (mV/pH)=|(Z6−Z5)/(p6−p5)| where p6 denotes pH 6, p5 denotes pH 5, Z6 denotes a zeta potential at the pH 6, and Z5 denotes a zeta potential at the pH 5.