公开(公告)号：US20230332016A1

公开(公告)日：2023-10-19

申请号：US18297152

申请日：2023-04-07

Applicant: SK enpulse Co., Ltd.

Inventor： Deok Su HAN ,  Seung Chul HONG ,  Han Teo PARK ,  Hwan Chul KIM ,  Hyeong Ju LEE

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1436 ,  H01L21/30625

Abstract: A composition for semiconductor processing, includes abrasive particles surface-modified with an amino silane-based compound; a copper erosion inhibitor, including an azole-based compound; a copper surface protectant, including a compound having a betaine group and a salicylic group or a derivative thereof; and a surfactant, including fluorine in a molecule thereof. A surface of the surface-modified abrasive particles comprises an amino silane group.

公开(公告)号：US20240030041A1

公开(公告)日：2024-01-25

申请号：US18255783

申请日：2021-10-18

Applicant: SK enpulse Co., Ltd.

Inventor： Han Teo PARK ,  Deok Su HAN ,  Jang Kuk KWON ,  Seung Chul HONG

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/304 ,  H01L21/67

CPC classification number: H01L21/3212 ,  C09G1/02 ,  H01L21/304 ,  H01L21/67219

Abstract: The present invention relates to a polishing composition for a semiconductor process, a method of preparing the polishing composition, and a method of fabricating a semiconductor device using the polishing composition. The polishing composition for a semiconductor process contains abrasive particles, an accelerator, and a stabilizer. The polishing composition has excellent long-term storage stability because the particles contained therein do not aggregate even after the polishing composition is stored at 60° C. or higher for a long time. In addition, the polishing composition may be applied to a process of polishing an amorphous carbon layer, may exhibit a high removal rate, prevent carbon residue generated during the polishing process from being adsorbed onto a semiconductor substrate, and prevent contamination of a polishing pad. The present invention may also provide a method of fabricating a semiconductor device using the polishing composition for a semiconductor process.

公开(公告)号：US20240218251A1

公开(公告)日：2024-07-04

申请号：US18403539

申请日：2024-01-03

Applicant: SK enpulse Co., Ltd.

Inventor： Seung Chul HONG ,  Kangsik MYUNG ,  Deok Su HAN ,  Han Teo PARK ,  Yongsoo CHOI

IPC: C09K13/04 ,  A01N43/80 ,  A01N59/08 ,  B24B37/04 ,  C09K13/00 ,  H01L21/3105

CPC classification number: C09K13/04 ,  A01N43/80 ,  A01N59/08 ,  B24B37/044 ,  C09K13/00 ,  H01L21/31053

Abstract: A composition for semiconductor processing includes polishing particles, water, and a biocide. The biocide includes a first biocide and a second biocide, the first biocide includes a thiazolinone-based compound, and the second biocide includes a chloric acid-based compound.

公开(公告)号：US20240043718A1

公开(公告)日：2024-02-08

申请号：US18255600

申请日：2021-10-18

Applicant: SK enpulse Co., Ltd.

Inventor： Han Teo PARK ,  Deok Su HAN ,  Jang Kuk KWON ,  Seung Chul HONG

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  H01L21/30625

Abstract: The present invention relates to a polishing composition for a semiconductor process, a method of preparing the polishing composition, and a method of fabricating a semiconductor device using the polishing composition. The polishing composition for a semiconductor process may be applied to a process of polishing an amorphous carbon layer, may exhibit a high removal rate of the amorphous carbon layer, may prevent the occurrence of defects by preventing carbon residue from being re-adsorbed onto a semiconductor substrate during the polishing process, and has excellent storage stability. The present invention may also provide a method of fabricating a semiconductor device using the polishing composition for a semiconductor process.

公开(公告)号：US20230332017A1

公开(公告)日：2023-10-19

申请号：US18297260

申请日：2023-04-07

Applicant: SK enpulse Co., Ltd.

Inventor： Seung Chul HONG ,  Kangsik MYUNG ,  Han Teo PARK ,  Deok Su HAN ,  Yongsoo CHOI

IPC: H01L21/768 ,  C09G1/02

CPC classification number: C09G1/02 ,  H01L21/76819 ,  H01L21/7684 ,  H01L21/76898

Abstract: A composition for semiconductor processing includes abrasive particles, and a dishing control additive, comprising a first dishing control additive and a second dishing control additive. The first dishing control additive includes a compound having a betaine group and a salicylic group or a derivative thereof, and the second dishing control additive includes an azole-based compound. The first dishing control additive includes 0.07 parts by weight or more based on 100 parts by weight of the abrasive particles, and the second dishing control additive includes 0.13 parts by weight or less based on 100 parts by weight of the abrasive particles.

公开(公告)号：US20230332014A1

公开(公告)日：2023-10-19

申请号：US18043451

申请日：2021-08-31

Applicant: SK enpulse Co., Ltd.

Inventor： Han Teo PARK ,  Deok Su HAN ,  Jang Kuk KWON ,  Seung Chul HONG

IPC: H01L21/3105 ,  C09G1/02 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/31051

Abstract: The present invention relates to a semiconductor process polishing composition and a semiconductor device manufacturing method in which the polishing composition is applied, and can provide a preparation method applied to a CMP process for an amorphous carbon layer, and thus exhibits a high polishing rate, prevents, during a CMP process, the re-adsorption of carbon residue on a semiconductor substrate and the contamination of a polishing pad, and stabilizes an accelerator in the polishing composition so that the storage stability thereof is excellent. In addition, provided is a semiconductor device manufacturing method in which the semiconductor process polishing composition is applied.

公开(公告)号：US20240274439A1

公开(公告)日：2024-08-15

申请号：US18404979

申请日：2024-01-05

Applicant: SK enpulse Co., Ltd.

Inventor： Deok Su HAN ,  Hwan Chul KIM ,  Seung Chul HONG ,  Han Teo PARK

IPC: H01L21/3105 ,  C09G1/02

CPC classification number: H01L21/31053 ,  C09G1/02

Abstract: A polishing composition for a semiconductor process includes polishing particles. The polishing particles have a Ds value of 700 nm2 to 1400 nm2 according to Equation 1 below;







Ds
=


MPS
2

-

D

1
⁢

0
2








[

Equation
⁢

1

]









In Equation 1, MPS is a mean particle size of primary particles of the polishing particles. D10 is a particle diameter at a 10% point on a cumulative curve of a particle size distribution of the primary particles of the polishing particles.

公开(公告)号：US20230407135A1

公开(公告)日：2023-12-21

申请号：US18331193

申请日：2023-06-08

Applicant: SK enpulse Co., Ltd.

Inventor： Seung Chul HONG ,  Deok Su HAN ,  Kang Sik MYUNG ,  Han Teo PARK ,  Hyeong Ju LEE ,  Yong Soo CHOI

IPC: C09G1/02 ,  H01L21/768 ,  H01L21/321 ,  H01L21/3105

CPC classification number: C09G1/02 ,  H01L21/76898 ,  H01L21/7684 ,  H01L21/76819 ,  H01L21/3212 ,  H01L21/31053

Abstract: A polishing composition and method for semiconductor processing being applicable to a semiconductor process including a process of polishing a semiconductor wafer including a through-silicon via (TSV), being capable of implementing excellent polishing performance, being capable of minimizing defects such as dishing, erosion, and protrusion, being capable of realizing an evenly polished surface without deviation between films when polishing a surface where a plurality of different films is exposed to the outside, including abrasive grains and at least one additive, and having a value of 1.45 to 1.90 as calculated by Equation 1.

公开(公告)号：US20230227696A1

公开(公告)日：2023-07-20

申请号：US18099031

申请日：2023-01-19

Applicant: SK enpulse Co., Ltd.

Inventor： Seung Chul HONG ,  Deok Su HAN ,  Han Teo PARK ,  Hwan Chul KIM ,  Kyu Hun KIM ,  Eun Sun JOENG

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09G1/02 ,  C09K3/1436 ,  H01L21/3212 ,  H01L21/7684 ,  H01L23/53266

Abstract: The present disclosure is a composition for a semiconductor process applied to a polishing process of a semiconductor wafer and, more specifically, to a semiconductor process involving a polishing process of a semiconductor wafer, wherein the composition includes abrasive particles, and the zeta potential of the abrasive particles is −50 mV to −10 mV at a pH of 6, and the zeta potential change rate represented by Equation 1 below is 6 mV to 30 mV: [Equation 1] Zeta potential change rate (mV/pH)=|(Z6−Z5)/(p6−p5)| where p6 denotes pH 6, p5 denotes pH 5, Z6 denotes a zeta potential at the pH 6, and Z5 denotes a zeta potential at the pH 5.