公开(公告)号：US20240345467A1

公开(公告)日：2024-10-17

申请号：US18638000

申请日：2024-04-17

申请人： SK enpulse Co., Ltd.

发明人： Tae Wan KIM ,  Geon Gon LEE ,  Min Gyo JEONG ,  Hyung Joo LEE ,  Tae Young KIM

IPC分类号： G03F1/26 ,  G03F1/82

CPC分类号： G03F1/26 ,  G03F1/82

摘要： A method of fabricating a blank mask, the method including: forming a light-shielding film on a light-transmissive substrate; and cleaning the light-shielding film with a cleaning solution, wherein in the cleaning, the light-shielding film has a thickness change of less than 5 nm. The blank mask may include a light-transmissive substrate and a light-shielding film disposed on the light-transmissive substrate. Further, on an entire surface of the blank mask, a content of halogen ions is less than 0.05 ng/cm2, a content of nitrogen-based ions is less than 2 ng/cm2, and a content of sulfur-based ions is less than 0.1 ng/cm2. The blank mask may be a photomask.

公开(公告)号：US20240061324A1

公开(公告)日：2024-02-22

申请号：US18451607

申请日：2023-08-17

申请人： SK enpulse Co., Ltd.

发明人： GeonGon LEE ,  Seong Yoon KIM ,  Min Gyo JEONG ,  Hyung Joo LEE ,  Sung Hoon SON ,  Tae Young KIM

IPC分类号： G03F1/32 ,  G03F1/48

CPC分类号： G03F1/32 ,  G03F1/48

摘要： A blank mask includes a light transmissive substrate and a multilayer comprising a light shielding layer and a phase shift layer disposed between the light transmissive substrate and the light shielding layer. The phase shift layer includes an upper surface facing the light shielding layer and a side surface connected to the upper surface, such that the light shielding layer is disposed on the upper surface and the side surface of the phase shift layer. When viewed from a top surface of the multilayer, the multilayer includes a central portion and an outer portion surrounding the central portion. The outer portion has a curved upper surface, which greatly suppresses damage to the phase shift layer by a cleaning solution and effectively reduces a frequency of particle generation at edges of the phase shift layer and the light shielding layer.

公开(公告)号：US20230418150A1

公开(公告)日：2023-12-28

申请号：US18340334

申请日：2023-06-23

申请人： SK enpulse Co., Ltd.

发明人： GeonGon LEE ,  Hyung-joo LEE ,  Suhyeon KIM ,  Sung Hoon SON ,  Seong Yoon KIM ,  Min Gyo JEONG ,  Taewan KIM ,  Inkyun SHIN ,  Tae Young KIM

IPC分类号： G03F1/32

CPC分类号： G03F1/32

摘要： A blank mask includes a light transmissive substrate, and a light-blocking layer, disposed on the light transmissive substrate, comprising a transition metal and either one or both of oxygen and nitrogen. An average value of grain sizes of a surface of the light-blocking layer ranges from 14 nm to 24 nm.

公开(公告)号：US20230305382A1

公开(公告)日：2023-09-28

申请号：US18187829

申请日：2023-03-22

申请人： SK enpulse Co., Ltd.

发明人： Seong Yoon KIM ,  Tae Young KIM ,  GeonGon LEE ,  Min Gyo JEONG ,  Sung Hoon SON ,  Inkyun SHIN

IPC分类号： G03F1/24

CPC分类号： G03F1/24

摘要： An extreme ultraviolet photomask includes a conductive layer; a substrate disposed on the conductive layer; a multilayer, comprising different metals alternately stacked on the substrate; a protective layer disposed on the multilayer; a low-reflectance part disposed on a portion of the protective layer, wherein the low-reflectance part comprises a first absorbent layer disposed on the portion of the protective layer, a low-reflectance layer formed on the first absorbent layer, and a first intagliated part formed at the portion where the protective layer is exposed; and a high-reflectance part disposed on another portion of the protective layer, wherein the high-reflectance part comprises a second absorbent layer disposed on the other portion of the protective layer, a high-reflectance layer disposed on the second absorbent layer, and a second intagliated part formed at the other where the protective layer is exposed.