公开(公告)号：US20230418150A1

公开(公告)日：2023-12-28

申请号：US18340334

申请日：2023-06-23

Applicant: SK enpulse Co., Ltd.

Inventor： GeonGon LEE ,  Hyung-joo LEE ,  Suhyeon KIM ,  Sung Hoon SON ,  Seong Yoon KIM ,  Min Gyo JEONG ,  Taewan KIM ,  Inkyun SHIN ,  Tae Young KIM

IPC: G03F1/32

CPC classification number: G03F1/32

Abstract: A blank mask includes a light transmissive substrate, and a light-blocking layer, disposed on the light transmissive substrate, comprising a transition metal and either one or both of oxygen and nitrogen. An average value of grain sizes of a surface of the light-blocking layer ranges from 14 nm to 24 nm.

公开(公告)号：US20240192584A1

公开(公告)日：2024-06-13

申请号：US18080186

申请日：2022-12-13

Applicant: SK enpulse Co., Ltd.

Inventor： Hyung-joo LEE ,  Kyuhun KIM ,  GeonGon LEE ,  Seong Yoon KIM ,  Suk Young CHOI ,  Suhyeon KIM ,  Sung Hoon SON ,  Min Gyo JEONG ,  Inkyun SHIN

IPC: G03F1/50 ,  G02F1/00 ,  G02F1/1335 ,  G03F1/60 ,  G03F1/80 ,  H01L21/285

CPC classification number: G03F1/50 ,  G02F1/0063 ,  G02F1/133512 ,  G03F1/60 ,  G03F1/80 ,  H01L21/28568

Abstract: A blank mask includes a light-transmitting substrate; and a light-shielding film, disposed on the light-transmitting substrate, including a first light-shielding layer and a second light-shielding layer disposed on the first light-shielding layer. The second light-shielding layer includes at least one of a transition metal, oxygen, or nitrogen, or any combination thereof. A reflectance of a surface of the light-shielding film with respect to light having a wavelength of 193 nm is 20% or more and 40% or less. A hardness value of the second light-shielding layer is 0.3 kPa or more and 0.55 kPa or less.

公开(公告)号：US20230408903A1

公开(公告)日：2023-12-21

申请号：US18309427

申请日：2023-04-28

Applicant: SK enpulse Co., Ltd.

Inventor： Seong Yoon KIM ,  GeonGon LEE ,  Min Gyo JEONG ,  Sung Hoon SON ,  Inkyun SHIN

IPC: G03F1/38 ,  G03F7/20 ,  G03F7/00 ,  G03F1/68

CPC classification number: G03F1/38 ,  G03F1/68 ,  G03F7/706851 ,  G03F7/2047

Abstract: A shadow mask includes a mask including one surface, another surface, and an opening that passes from one surface to the other, and a shutter provided on the one surface of the mask and configured to adjust a size of the opening, wherein the shutter is configured to move from an edge to a center of the opening to adjust the size of the opening, and the shadow mask is applied in manufacturing a blank mask for a semiconductor lithography process.

公开(公告)号：US20230367200A1

公开(公告)日：2023-11-16

申请号：US18312942

申请日：2023-05-05

Applicant: SK enpulse Co., Ltd.

Inventor： Seong Yoon KIM ,  Sung Hoon SON ,  Min Gyo JEONG ,  Inkyun SHIN ,  Suk Young CHOI ,  Hyung-ju LEE ,  Suhyeon KIM

IPC: G03F1/32 ,  G03F1/80 ,  G03F1/54

CPC classification number: G03F1/32 ,  G03F1/80 ,  G03F1/54

Abstract: A blank mask includes a light-transmitting substrate; and a light-shielding film on the light-transmitting substrate. The light-shielding film includes a transition metal and oxygen, and a scum formation time required to generate scum is 120 minutes or more when light with a wavelength of 172 nm and an intensity of 10 kJ/cm2 is applied on the light-shielding film.

公开(公告)号：US20230305382A1

公开(公告)日：2023-09-28

申请号：US18187829

申请日：2023-03-22

Applicant: SK enpulse Co., Ltd.

Inventor： Seong Yoon KIM ,  Tae Young KIM ,  GeonGon LEE ,  Min Gyo JEONG ,  Sung Hoon SON ,  Inkyun SHIN

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: An extreme ultraviolet photomask includes a conductive layer; a substrate disposed on the conductive layer; a multilayer, comprising different metals alternately stacked on the substrate; a protective layer disposed on the multilayer; a low-reflectance part disposed on a portion of the protective layer, wherein the low-reflectance part comprises a first absorbent layer disposed on the portion of the protective layer, a low-reflectance layer formed on the first absorbent layer, and a first intagliated part formed at the portion where the protective layer is exposed; and a high-reflectance part disposed on another portion of the protective layer, wherein the high-reflectance part comprises a second absorbent layer disposed on the other portion of the protective layer, a high-reflectance layer disposed on the second absorbent layer, and a second intagliated part formed at the other where the protective layer is exposed.