公开(公告)号：US20240192584A1

公开(公告)日：2024-06-13

申请号：US18080186

申请日：2022-12-13

Applicant: SK enpulse Co., Ltd.

Inventor： Hyung-joo LEE ,  Kyuhun KIM ,  GeonGon LEE ,  Seong Yoon KIM ,  Suk Young CHOI ,  Suhyeon KIM ,  Sung Hoon SON ,  Min Gyo JEONG ,  Inkyun SHIN

IPC: G03F1/50 ,  G02F1/00 ,  G02F1/1335 ,  G03F1/60 ,  G03F1/80 ,  H01L21/285

CPC classification number: G03F1/50 ,  G02F1/0063 ,  G02F1/133512 ,  G03F1/60 ,  G03F1/80 ,  H01L21/28568

Abstract: A blank mask includes a light-transmitting substrate; and a light-shielding film, disposed on the light-transmitting substrate, including a first light-shielding layer and a second light-shielding layer disposed on the first light-shielding layer. The second light-shielding layer includes at least one of a transition metal, oxygen, or nitrogen, or any combination thereof. A reflectance of a surface of the light-shielding film with respect to light having a wavelength of 193 nm is 20% or more and 40% or less. A hardness value of the second light-shielding layer is 0.3 kPa or more and 0.55 kPa or less.

公开(公告)号：US20240061324A1

公开(公告)日：2024-02-22

申请号：US18451607

申请日：2023-08-17

Applicant: SK enpulse Co., Ltd.

Inventor： GeonGon LEE ,  Seong Yoon KIM ,  Min Gyo JEONG ,  Hyung Joo LEE ,  Sung Hoon SON ,  Tae Young KIM

IPC: G03F1/32 ,  G03F1/48

CPC classification number: G03F1/32 ,  G03F1/48

Abstract: A blank mask includes a light transmissive substrate and a multilayer comprising a light shielding layer and a phase shift layer disposed between the light transmissive substrate and the light shielding layer. The phase shift layer includes an upper surface facing the light shielding layer and a side surface connected to the upper surface, such that the light shielding layer is disposed on the upper surface and the side surface of the phase shift layer. When viewed from a top surface of the multilayer, the multilayer includes a central portion and an outer portion surrounding the central portion. The outer portion has a curved upper surface, which greatly suppresses damage to the phase shift layer by a cleaning solution and effectively reduces a frequency of particle generation at edges of the phase shift layer and the light shielding layer.

公开(公告)号：US20230418150A1

公开(公告)日：2023-12-28

申请号：US18340334

申请日：2023-06-23

Applicant: SK enpulse Co., Ltd.

Inventor： GeonGon LEE ,  Hyung-joo LEE ,  Suhyeon KIM ,  Sung Hoon SON ,  Seong Yoon KIM ,  Min Gyo JEONG ,  Taewan KIM ,  Inkyun SHIN ,  Tae Young KIM

IPC: G03F1/32

CPC classification number: G03F1/32

Abstract: A blank mask includes a light transmissive substrate, and a light-blocking layer, disposed on the light transmissive substrate, comprising a transition metal and either one or both of oxygen and nitrogen. An average value of grain sizes of a surface of the light-blocking layer ranges from 14 nm to 24 nm.

公开(公告)号：US20230408903A1

公开(公告)日：2023-12-21

申请号：US18309427

申请日：2023-04-28

Applicant: SK enpulse Co., Ltd.

Inventor： Seong Yoon KIM ,  GeonGon LEE ,  Min Gyo JEONG ,  Sung Hoon SON ,  Inkyun SHIN

IPC: G03F1/38 ,  G03F7/20 ,  G03F7/00 ,  G03F1/68

CPC classification number: G03F1/38 ,  G03F1/68 ,  G03F7/706851 ,  G03F7/2047

Abstract: A shadow mask includes a mask including one surface, another surface, and an opening that passes from one surface to the other, and a shutter provided on the one surface of the mask and configured to adjust a size of the opening, wherein the shutter is configured to move from an edge to a center of the opening to adjust the size of the opening, and the shadow mask is applied in manufacturing a blank mask for a semiconductor lithography process.

公开(公告)号：US20230305382A1

公开(公告)日：2023-09-28

申请号：US18187829

申请日：2023-03-22

Applicant: SK enpulse Co., Ltd.

Inventor： Seong Yoon KIM ,  Tae Young KIM ,  GeonGon LEE ,  Min Gyo JEONG ,  Sung Hoon SON ,  Inkyun SHIN

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: An extreme ultraviolet photomask includes a conductive layer; a substrate disposed on the conductive layer; a multilayer, comprising different metals alternately stacked on the substrate; a protective layer disposed on the multilayer; a low-reflectance part disposed on a portion of the protective layer, wherein the low-reflectance part comprises a first absorbent layer disposed on the portion of the protective layer, a low-reflectance layer formed on the first absorbent layer, and a first intagliated part formed at the portion where the protective layer is exposed; and a high-reflectance part disposed on another portion of the protective layer, wherein the high-reflectance part comprises a second absorbent layer disposed on the other portion of the protective layer, a high-reflectance layer disposed on the second absorbent layer, and a second intagliated part formed at the other where the protective layer is exposed.