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公开(公告)号:US20150130003A1
公开(公告)日:2015-05-14
申请号:US14292401
申请日:2014-05-30
Applicant: SK hynix Inc.
Inventor: Do-Hwan KIM , Dong-Hyun WOO , Jong-Chae KIM , Chung-Seok CHOI
IPC: H01L27/146
CPC classification number: H01L27/14638 , H01L27/14601 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14685
Abstract: An image sensor includes a substrate including photoelectric conversion regions, a magnetic layer disposed on a back side of the substrate and suitable for generating a magnetic field, and color filters and microlenses disposed on the magnetic layer.
Abstract translation: 图像传感器包括:基板,包括光电转换区域,设置在基板的背面并适于产生磁场的磁性层;以及布置在磁性层上的滤色器和微透镜。
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公开(公告)号:US20170310859A1
公开(公告)日:2017-10-26
申请号:US15251948
申请日:2016-08-30
Applicant: SK hynix Inc.
Inventor: Jong Eun KIM , Namil KIM , Dae-Woo KIM , Changsu PARK , Dong-Hyun WOO
IPC: H04N5/225
CPC classification number: H04N5/2253 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14812 , H04N5/369 , H04N5/376
Abstract: Provided is an image sensor having a pixel region including a plurality of pixel blocks disposed in a matrix form, outer address markers around the pixel region, interspaces between the plurality of pixel blocks, and inner address markers disposed in the interspaces.
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公开(公告)号:US20190199951A1
公开(公告)日:2019-06-27
申请号:US16293395
申请日:2019-03-05
Applicant: SK hynix Inc.
Inventor: Pyong-Su KWAG , Sung-Kun PARK , Dong-Hyun WOO
IPC: H04N5/369 , H04N5/3745 , H04N5/351
CPC classification number: H04N5/3698 , H04N5/351 , H04N5/3745
Abstract: An image sensing device includes a floating diffusion node, a reset circuit coupled between a supply terminal of a high voltage and the floating diffusion node, and suitable for resetting the floating diffusion node with the high voltage during a reference period based on a reset control signal, a photodiode coupled between a supply terminal of a low voltage and a coupling node, and suitable for generating a photocharge based on incident light during an exposure period, a transmission block coupled between the coupling node and the floating diffusion node, and suitable for transmitting the photocharge to the floating diffusion node during a transmission period based on a transmission control signal, and a selection circuit coupled between an input terminal of a boost control signal and an output terminal of a pixel signal, and suitable for generating the pixel signal with a boost voltage greater than the high voltage during the transmission period based on a selection control signal and a voltage applied to the floating diffusion node.
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公开(公告)号:US20150295001A1
公开(公告)日:2015-10-15
申请号:US14556962
申请日:2014-12-01
Applicant: SK hynix Inc.
Inventor: Chung-Seok CHOI , Dong-Hyun WOO , Jong-Chae KIM
IPC: H01L27/146 , H01L31/18 , H01L31/0224
CPC classification number: H01L27/14621 , H01L27/14601 , H01L27/14609 , H01L27/1461 , H01L27/1462 , H01L27/14685
Abstract: An image sensor includes: a substrate including a photoelectric conversion region; a charge control layer overlapping with the photoelectric conversion region that is formed over the substrate; an inter-layer dielectric layer including lines that are formed over the charge control layer; and color filters and a light condensing pattern formed over the inter-layer dielectric layer to correspond to the photoelectric conversion region.
Abstract translation: 图像传感器包括:基板,包括光电转换区域; 与形成在所述基板上的所述光电转换区域重叠的电荷控制层; 包括形成在所述电荷控制层上的线的层间电介质层; 以及形成在层间电介质层上的滤光器和聚光图案,以对应于光电转换区域。
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公开(公告)号:US20170294468A1
公开(公告)日:2017-10-12
申请号:US15238468
申请日:2016-08-16
Applicant: SK hynix Inc.
Inventor: Sung-Kun PARK , Yun-Hui YANG , Pyong-Su KWAG , Dong-Hyun WOO , Young-Jun KWON , Min-Ki NA , Cha-Young LEE , Ho-Ryeong LEE
IPC: H01L27/146
CPC classification number: H01L27/14616 , H01L27/14603 , H01L27/14614 , H01L27/1463 , H01L27/14638 , H01L27/14643 , H01L27/14689
Abstract: An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.
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公开(公告)号:US20170278883A1
公开(公告)日:2017-09-28
申请号:US15192816
申请日:2016-06-24
Applicant: SK hynix Inc.
Inventor: Pyong-Su KWAG , Min-Ki NA , Dong-Hyun WOO , Ho-Ryeong LEE
IPC: H01L27/146 , H01L29/423 , H01L27/06
CPC classification number: H01L27/14614 , H01L27/0629 , H01L27/14643 , H01L27/14689 , H01L29/42376
Abstract: An image sensor includes: a light receiving section suitable for generating photocharges in response to incident light; and a driving section including a source follower transistor suitable for generating an output voltage corresponding to a reference voltage in response to the photocharges. The source follower transistor includes: a stack structure formed by sequentially stacking a first conductive layer, an insulating layer and a second conductive layer; an open portion to formed through the second conductive layer and the insulating layer so as to expose the first conductive layer; a channel layer formed along the surface of the open portion so as to be connected to the first conductive layer and the second conductive layer; and a gate is connected to the light receiving section and which is formed over the channel layer so as to overlap the second conductive layer.
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公开(公告)号:US20170208281A1
公开(公告)日:2017-07-20
申请号:US15154799
申请日:2016-05-13
Applicant: SK hynix Inc.
Inventor: Pyong-Su KWAG , Sung-Kun PARK , Dong-Hyun WOO
IPC: H04N5/3745 , H01L27/146
CPC classification number: H04N5/3745 , H01L27/14609 , H01L27/14643 , H04N5/357 , H04N5/3698
Abstract: A pixel includes: a charge transmission node; an initialization block suitable for initializing the charge transmission node with a first voltage during a data initialization period; a photodiode suitable for generating a photocharge based on incident light during an exposure period; a transmission block suitable for transmitting the photocharge to the charge transmission node during a transmission period; a first accumulation block suitable for boosting the charge transmission node with a second voltage during a boosting period and accumulating the photocharge transmitted to the charge transmission node during the transmission period; and a selection block suitable for generating a pixel signal corresponding to a voltage loaded on the charge transmission node during a selection period.
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