IMAGE SENSING DEVICE AND OPERATING METHOD THEREOF

    公开(公告)号:US20190199951A1

    公开(公告)日:2019-06-27

    申请号:US16293395

    申请日:2019-03-05

    Applicant: SK hynix Inc.

    CPC classification number: H04N5/3698 H04N5/351 H04N5/3745

    Abstract: An image sensing device includes a floating diffusion node, a reset circuit coupled between a supply terminal of a high voltage and the floating diffusion node, and suitable for resetting the floating diffusion node with the high voltage during a reference period based on a reset control signal, a photodiode coupled between a supply terminal of a low voltage and a coupling node, and suitable for generating a photocharge based on incident light during an exposure period, a transmission block coupled between the coupling node and the floating diffusion node, and suitable for transmitting the photocharge to the floating diffusion node during a transmission period based on a transmission control signal, and a selection circuit coupled between an input terminal of a boost control signal and an output terminal of a pixel signal, and suitable for generating the pixel signal with a boost voltage greater than the high voltage during the transmission period based on a selection control signal and a voltage applied to the floating diffusion node.

    IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME
    4.
    发明申请
    IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME 审中-公开
    图像传感器及其制造方法

    公开(公告)号:US20150295001A1

    公开(公告)日:2015-10-15

    申请号:US14556962

    申请日:2014-12-01

    Applicant: SK hynix Inc.

    Abstract: An image sensor includes: a substrate including a photoelectric conversion region; a charge control layer overlapping with the photoelectric conversion region that is formed over the substrate; an inter-layer dielectric layer including lines that are formed over the charge control layer; and color filters and a light condensing pattern formed over the inter-layer dielectric layer to correspond to the photoelectric conversion region.

    Abstract translation: 图像传感器包括:基板,包括光电转换区域; 与形成在所述基板上的所述光电转换区域重叠的电荷控制层; 包括形成在所述电荷控制层上的线的层间电介质层; 以及形成在层间电介质层上的滤光器和聚光图案,以对应于光电转换区域。

    TRANSISTOR AND IMAGE SENSOR HAVING THE SAME
    6.
    发明申请

    公开(公告)号:US20170278883A1

    公开(公告)日:2017-09-28

    申请号:US15192816

    申请日:2016-06-24

    Applicant: SK hynix Inc.

    Abstract: An image sensor includes: a light receiving section suitable for generating photocharges in response to incident light; and a driving section including a source follower transistor suitable for generating an output voltage corresponding to a reference voltage in response to the photocharges. The source follower transistor includes: a stack structure formed by sequentially stacking a first conductive layer, an insulating layer and a second conductive layer; an open portion to formed through the second conductive layer and the insulating layer so as to expose the first conductive layer; a channel layer formed along the surface of the open portion so as to be connected to the first conductive layer and the second conductive layer; and a gate is connected to the light receiving section and which is formed over the channel layer so as to overlap the second conductive layer.

    PIXEL, IMAGE SENSING DEVICE INCLUDING THE PIXEL AND METHOD FOR DRIVING THE IMAGE SENSING DEVICE

    公开(公告)号:US20170208281A1

    公开(公告)日:2017-07-20

    申请号:US15154799

    申请日:2016-05-13

    Applicant: SK hynix Inc.

    Abstract: A pixel includes: a charge transmission node; an initialization block suitable for initializing the charge transmission node with a first voltage during a data initialization period; a photodiode suitable for generating a photocharge based on incident light during an exposure period; a transmission block suitable for transmitting the photocharge to the charge transmission node during a transmission period; a first accumulation block suitable for boosting the charge transmission node with a second voltage during a boosting period and accumulating the photocharge transmitted to the charge transmission node during the transmission period; and a selection block suitable for generating a pixel signal corresponding to a voltage loaded on the charge transmission node during a selection period.

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