公开(公告)号：US20180076022A1

公开(公告)日：2018-03-15

申请号：US15584637

申请日：2017-05-02

申请人： SK hynix Inc.

发明人： Yong Soo CHOI ,  Ho Jin JEONG

IPC分类号： H01L21/02 ,  H01L21/447

CPC分类号： H01L21/02164 ,  B81C1/00952 ,  H01L21/02019 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02112 ,  H01L21/02172 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/02403 ,  H01L21/30625 ,  H01L21/3065 ,  H01L21/447

摘要： In a method of treating a semiconductor substrate, a plurality of active regions and a plurality of trench isolation regions are formed by selectively etching the semiconductor substrate. The semiconductor substrate is washed by providing deionized water to the semiconductor substrate. A silicon-based solution is provided to the semiconductor substrate by replacing the deionized water disposed on the semiconductor substrate with the silicon-based solution. A silicon oxide material is formed from the silicon-based solution by performing a heat treatment on the silicon-based solution and the semiconductor substrate. The silicon oxide material fills the trench isolation regions.