公开(公告)号：US20150153794A1

公开(公告)日：2015-06-04

申请号：US14243663

申请日：2014-04-02

Applicant: SK hynix Inc.

Inventor： Hoon CHOI ,  Sang Don LEE ,  Yeon Uk KIM ,  Seok Joon KANG

IPC: G06F1/26 ,  G06F1/30

CPC classification number: G06F1/26 ,  G11C5/14 ,  G11C16/30

Abstract: A system includes a power supply, a memory controller and a memory device. The memory controller is configured to receive power from the power supply, generate a memory power supply voltage for use by the memory device based on the power received from the power supply and provide the memory power supply voltage to the memory device.

Abstract translation: 系统包括电源，存储器控制器和存储器件。 存储器控制器被配置为从电源接收电力，基于从电源接收的功率生成存储器设备使用的存储器电源电压，并将存储器电源电压提供给存储器件。

公开(公告)号：US20160320789A1

公开(公告)日：2016-11-03

申请号：US15206658

申请日：2016-07-11

Applicant: SK hynix Inc.

Inventor： Yeon Uk KIM

IPC: G05F3/02 ,  H03K19/00

CPC classification number: G05F3/02 ,  H03K19/0013 ,  H03K19/0027 ,  H03K19/00361

Abstract: A semiconductor integrated circuit device having a bulk bias control function is provided. The semiconductor integrated circuit device may be configured to output the first external voltage as a bulk voltage of a transistor in a power-up period, and to output a second external voltage having a higher level than the first external voltage as the bulk voltage of the transistor in a power-down mode.

公开(公告)号：US20140321220A1

公开(公告)日：2014-10-30

申请号：US14018732

申请日：2013-09-05

Applicant: SK hynix Inc.

Inventor： Yeon Uk KIM ,  Jae Boum PARK

IPC: G11C29/00

CPC classification number: G11C29/785 ,  G11C17/18

Abstract: A semiconductor memory apparatus according to the embodiment includes: an external connection terminal configured to supply an external voltage; a fuse unit configured to perform a fuse rupture operation; and an interruption circuit unit configured to respond to a test signal to determine whether the external connection terminal is connected to the fuse unit.

Abstract translation: 根据实施例的半导体存储装置包括：外部连接端子，被配置为提供外部电压; 保险丝单元，被配置为执行熔丝断裂操作; 以及中断电路单元，被配置为响应于测试信号以确定外部连接端子是否连接到熔丝单元。

公开(公告)号：US20180152186A1

公开(公告)日：2018-05-31

申请号：US15609353

申请日：2017-05-31

Applicant: SK hynix Inc.

Inventor： Yeon Uk KIM

IPC: H03K19/003 ,  H03K5/24

CPC classification number: H03K19/00323 ,  H03K5/24

Abstract: An internal voltage generation circuit includes a comparison circuit, a driving signal generation circuit and a driving circuit. The comparison circuit generates a comparison signal from an internal voltage in response to a reference voltage. The driving signal generation circuit generates a pull-up driving signal and a pull-down driving signal having different duty ratios in response to the comparison signal. The driving circuit drives the internal voltage in response to the pull-up driving signal and the pull-down driving signal.

公开(公告)号：US20170067942A1

公开(公告)日：2017-03-09

申请号：US14959025

申请日：2015-12-04

Applicant: SK hynix Inc.

Inventor： Yeon Uk KIM

IPC: G01R17/00 ,  G01R21/00

CPC classification number: G01R17/00 ,  G01R19/16552 ,  G01R21/00 ,  G01R31/2856 ,  G11C5/143 ,  G11C29/021 ,  G11C29/028

Abstract: A power-supply voltage sensing device is disclosed, which relates to a technology for detecting a level of an external power-supply voltage during a test mode. The power-supply voltage sensing device includes a reference voltage trimming unit configured to trim a reference voltage in response to a code signal, a power-supply voltage detection unit configured to select one of a power-supply voltage and an external power-supply voltage in response to a test signal, compare the external power-supply voltage with the reference voltage, and output a detection signal according to the result of comparison, and a reference voltage control unit configured to output the code signal in response to the detection signal.

Abstract translation: 公开了一种电源电压检测装置，其涉及在测试模式期间检测外部电源电压的电平的技术。 电源电压检测装置包括：基准电压修整单元，被配置为响应于代码信号修整参考电压;电源电压检测单元，被配置为选择电源电压和外部电源电压之一 响应于测试信号，将外部电源电压与参考电压进行比较，并根据比较结果输出检测信号;以及参考电压控制单元，配置为响应于检测信号输出代码信号。

公开(公告)号：US20160349784A1

公开(公告)日：2016-12-01

申请号：US14873597

申请日：2015-10-02

Applicant: SK hynix Inc.

Inventor： Yeon Uk KIM

IPC: G05F3/08

CPC classification number: G05F3/08 ,  G05F1/10 ,  G05F1/462 ,  G05F1/465 ,  G05F1/575 ,  G05F3/02

Abstract: An internal voltage generation device includes a voltage generation block configured to compare a reference voltage and a divided voltage, and generate an output voltage; and an internal voltage driving block including a pull-up driving unit which selectively pull-up drives an internal voltage according to the output voltage, and configured to output the output voltage to the pull-up driving unit through different paths according to a test signal.

Abstract translation: 内部电压产生装置包括：电压产生模块，被配置为比较参考电压和分压，并产生输出电压; 以及包括上拉驱动单元的内部电压驱动单元，所述上拉驱动单元根据所述输出电压选择性地上拉驱动内部电压，并且被配置为根据测试信号通过不同的路径将所述输出电压输出到所述上拉驱动单元 。

公开(公告)号：US20160011620A1

公开(公告)日：2016-01-14

申请号：US14514027

申请日：2014-10-14

Applicant: SK hynix Inc.

Inventor： Yeon Uk KIM

IPC: G05F3/02 ,  H03K3/012

CPC classification number: G05F3/02 ,  H03K19/0013 ,  H03K19/0027 ,  H03K19/00361

Abstract: A semiconductor integrated circuit device having a bulk bias control function is provided. The semiconductor integrated circuit device may be configured to output the first external voltage as a bulk voltage of a transistor in a power-up period, and to output a second external voltage having a higher level than the first external voltage as the bulk voltage of the transistor in a power-down mode.

Abstract translation: 提供具有体积偏置控制功能的半导体集成电路器件。 半导体集成电路器件可以被配置为在上电周期中输出作为晶体管的体电压的第一外部电压，并且输出具有比第一外部电压高的电平的第二外部电压作为 晶体管处于掉电模式。