公开(公告)号：US20170207098A1

公开(公告)日：2017-07-20

申请号：US15138337

申请日：2016-04-26

Applicant: SK hynix Inc.

Inventor： Jae Hee SIM ,  Min Seok SON ,  Keun Kyu KONG ,  Jeong Hoon AN

IPC: H01L21/306 ,  H01L21/308 ,  H01L29/06 ,  H01L21/324

CPC classification number: H01L21/30604 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0271 ,  H01L21/3085 ,  H01L21/32 ,  H01L21/324 ,  H01L29/0657

Abstract: A semiconductor integrated circuit device and a method of manufacturing the same are disclosed. A semiconductor wafer having a surface step is prepared. A first material layer is formed on an upper surface of the semiconductor wafer so that a protrusion is formed in a portion thereof corresponding to an edge region of the semiconductor wafer. A second material layer is formed on the first material layer.

公开(公告)号：US20150103588A1

公开(公告)日：2015-04-16

申请号：US14151565

申请日：2014-01-09

Applicant: SK hynix Inc.

Inventor： Min Seok SON

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

CPC classification number: G11C13/0004 ,  G11C11/5678 ,  G11C2213/50 ,  G11C2213/72 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1675 ,  H01L45/1683

Abstract: A variable resistance memory apparatus and a method of manufacturing the same are provided. The variable resistance memory apparatus includes a plurality of memory cells. Each of the memory cells includes a plurality of data storage regions. The plurality of data storage regions have different widths from each other.

Abstract translation: 提供了一种可变电阻存储装置及其制造方法。 可变电阻存储装置包括多个存储单元。 每个存储单元包括多个数据存储区域。 多个数据存储区域具有彼此不同的宽度。

公开(公告)号：US20150090948A1

公开(公告)日：2015-04-02

申请号：US14150558

申请日：2014-01-08

Applicant: SK hynix Inc.

Inventor： Min Seok SON

IPC: H01L45/00

CPC classification number: H01L45/144 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/148 ,  H01L45/1683

Abstract: A resistive memory apparatus includes a first electrode formed on a semiconductor substrate, an insulating layer formed on the first electrode and including a hole exposing an upper surface of the first electrode, a data storage unit in which a first resistance-variable material and a second resistance-variable material are alternately formed in the hole at least once, and a second electrode formed on the data storage unit.

Abstract translation: 一种电阻式存储装置，包括形成在半导体衬底上的第一电极，形成在第一电极上并包括暴露第一电极的上表面的孔的绝缘层，数据存储单元，其中第一电阻变化材料和第二电极 电阻变化材料在孔中交替形成至少一次，第二电极形成在数据存储单元上。