公开(公告)号：US20180267743A1

公开(公告)日：2018-09-20

申请号：US15723659

申请日：2017-10-03

申请人： SK hynix Inc.

发明人： Nam-Kyun PARK

IPC分类号： G06F3/06 ,  H01L45/00 ,  G06F12/08 ,  G06F12/0875 ,  G11C11/16 ,  H01L27/115

CPC分类号： G06F3/0656 ,  G06F3/0602 ,  G06F3/0679 ,  G06F12/08 ,  G06F12/0875 ,  G11C11/1655 ,  G11C2213/79 ,  H01L27/115 ,  H01L27/24 ,  H01L45/124 ,  H01L45/146 ,  H01L45/149 ,  H01L45/1633

摘要： An electronic device includes a semiconductor memory. The semiconductor memory includes a first variable resistance element, a first switching element coupled to the first variable resistance element via a first line, a second variable resistance element, and a second switching element coupled to the second variable resistance element via a second line, wherein a distance between the first switching element and the first variable resistance element is larger than a distance between the second switching element and the second variable resistance element, and wherein a second path from a first terminal of the second switching element to the second variable resistance element includes a resistance component, a resistance of the second path being greater than a resistance of a first path, the first path being from a first terminal of the first switching element to the first variable resistance element.

公开(公告)号：US20190205060A1

公开(公告)日：2019-07-04

申请号：US16298890

申请日：2019-03-11

申请人： SK hynix Inc.

发明人： Nam-Kyun PARK

IPC分类号： G06F3/06 ,  H01L27/115 ,  G11C11/16 ,  G06F12/0875 ,  H01L45/00 ,  G06F12/08 ,  H01L27/24

CPC分类号： G06F3/0656 ,  G06F3/0602 ,  G06F3/0679 ,  G06F12/08 ,  G06F12/0868 ,  G06F12/0875 ,  G06F2212/222 ,  G11C11/1655 ,  G11C2213/79 ,  H01L27/115 ,  H01L27/24 ,  H01L27/2436 ,  H01L45/124 ,  H01L45/146 ,  H01L45/149 ,  H01L45/1633

摘要： An electronic device includes a semiconductor memory. The semiconductor memory includes a first variable resistance element, a first switching element coupled to the first variable resistance element via a first line, a second variable resistance element, and a second switching element coupled to the second variable resistance element via a second line, wherein a distance between the first switching element and the first variable resistance element is larger than a distance between the second switching element and the second variable resistance element, and wherein a second path from a first terminal of the second switching element to the second variable resistance element includes a resistance component, a resistance of the second path being greater than a resistance of a first path, the first path being from a first terminal of the first switching element to the first variable resistance element.