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    IMAGE SENSING DEVICE
    1.
    发明申请
    IMAGE SENSING DEVICE 有权

    公开(公告)号：US20220293659A1

    公开(公告)日：2022-09-15

    申请号：US17522615

    申请日：2021-11-09

    申请人： SK hynix Inc.

    发明人： Sung Wook CHO

    IPC分类号： H01L27/146 ,  H04N5/369 ,  H04N5/359 ,  H04N5/351

    摘要： An image sensing device for preventing a crosstalk path is disclosed. The image sensing device includes a substrate including a plurality of photoelectric conversion elements, each of which generates and accumulates photocharges corresponding to incident light and a plurality of lenses disposed over the substrate, and arranged to receive the incident light and to direct received incident light to the plurality of photoelectric conversion elements, wherein the plurality of lenses includes a first lens and a second lens that are arranged to contact each other and have different refractive indexes from each other.

    IMAGE SENSING DEVICE
    2.
    发明申请
    IMAGE SENSING DEVICE 有权

    公开(公告)号：US20220077211A1

    公开(公告)日：2022-03-10

    申请号：US17225656

    申请日：2021-04-08

    申请人： SK hynix Inc.

    发明人： Sung Wook CHO

    IPC分类号： H01L27/146

    摘要： An image sensing device includes photoelectric conversion elements structured to convert light into electrical signals, and a color filter layer structured to filter incident light towards the photoelectric conversion elements depending on a wavelength range of the incident light corresponding to colors of the incident light to allow the filtered light to be detected by the photoelectric conversion elements corresponding to the colors of the incident light. The color filter layer includes a plurality of first color filters as part of the different filters and structured to allow light at a wavelength range corresponding to a first color and arranged adjacent to each other. A distance between at least one of the first color filters and a corresponding photoelectric conversion element formed below the at least one of the first color filters is different from a distance between the remaining first color filters and corresponding photoelectric conversion elements, respectively.

    IMAGE SENSING DEVICE
    3.
    发明公开
    IMAGE SENSING DEVICE 审中-公开

    公开(公告)号：US20240323527A1

    公开(公告)日：2024-09-26

    申请号：US18408318

    申请日：2024-01-09

    申请人： SK hynix Inc.

    发明人： Sung Wook CHO

    IPC分类号： H04N23/67 ,  G02B6/42 ,  H01L27/146

    CPC分类号： H04N23/672 ,  G02B6/4206 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/1463

    摘要： An image sensing device includes: a plurality of photoelectric conversion elements included in a unit pixel and located in a substrate layer; an isolation structure configured to isolate the plurality of photoelectric conversion elements from photoelectric conversion elements included in another unit pixel; a first anti-reflection layer configured to overlap the plurality of photoelectric conversion elements and disposed to be in contact with one surface of the substrate layer; a light guide disposed between the plurality of photoelectric conversion elements and disposed to be in contact with one surface of the substrate layer and the first anti-reflection layer; a grid layer configured to overlap the isolation structure; and a second anti-reflection layer disposed to be in contact with the first anti-reflection layer, the light guide, and the grid layer, wherein the light guide includes a material having a refractive index smaller than a refractive index of the first anti-reflection layer.

    IMAGE SENSING DEVICE
    4.
    发明申请
    IMAGE SENSING DEVICE 有权

    公开(公告)号：US20230042186A1

    公开(公告)日：2023-02-09

    申请号：US17859280

    申请日：2022-07-07

    申请人： SK hynix Inc.

    发明人： Sung Wook CHO

    IPC分类号： H01L27/146

    摘要： An image sensing device includes a pixel array configured to include a plurality of pixel groups arranged in a matrix structure. Each of the pixel groups includes an optical filter configured to selectively pass incident light, a plurality of photoelectric conversion regions disposed below the optical filter and arranged in a matrix structure, a first isolation structure disposed between the photoelectric conversion regions and other pixel groups, a plurality of second isolation structures disposed between two adjacent photoelectric conversion regions from among the photoelectric conversion regions, and a third isolation structure disposed between the second isolation structures, and configured to interconnect the second isolation structures. The third isolation structure includes a cavity region formed adjacent to contact any one of the photoelectric conversion regions.

    IMAGE SENSING DEVICE
    6.
    发明申请
    IMAGE SENSING DEVICE 有权

    公开(公告)号：US20230016604A1

    公开(公告)日：2023-01-19

    申请号：US17678344

    申请日：2022-02-23

    申请人： SK hynix Inc.

    发明人： Sung Wook CHO

    IPC分类号： H04N5/369 ,  H04N9/04 ,  H01L27/146

    摘要： An image sensing device includes a pixel array including image sensing pixels, phase detection pixel pairs disposed between the image sensing pixels, photoelectric conversion regions corresponding to the image sensing pixels and the phase detection pixels, device isolation structures isolating the photoelectric conversion regions, color filters corresponding to the image sensing pixels and the phase detection pixel pairs, a first grid structure disposed between a color filter of a first image sensing pixel and a color filter of an adjacent first phase detection pixel pair and shifted by a first distance from a first device isolation structure disposed between the first image sensing pixel and the first phase detection pixel pair, and a second grid structure disposed in color filters of the first phase detection pixel pair and shifted by a second distance from a second device isolation structure disposed between the first phase detection pixel pairs.

    IMAGE SENSING DEVICE
    8.
    发明公开
    IMAGE SENSING DEVICE 审中-公开

    公开(公告)号：US20240186342A1

    公开(公告)日：2024-06-06

    申请号：US18355238

    申请日：2023-07-19

    申请人： SK hynix Inc.

    发明人： Sung Wook CHO

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14605 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H04N25/78

    摘要： An image sensing device includes a pixel region provided in a first portion of a semiconductor substrate such that photoelectric conversion elements for converting incident light into an electrical signal are disposed in the first portion of the semiconductor substrate, a dummy region located outside the pixel region to surround the pixel region and provided in a second portion of the semiconductor substrate without including a photoelectric conversion element, first microlenses disposed over the first portion of the semiconductor substrate and in the pixel region, the first microlenses configured to converge the incident light onto corresponding photoelectric conversion elements, second microlenses disposed over the second portion of the semiconductor substrate and in the dummy region, the second microlenses isolated from the first microlenses, and at least one alignment pattern disposed in the second portion of semiconductor substrate so as to be aligned with the second microlenses.