Stacked type image sensors having a through silicon via structure

    公开(公告)号:US09773831B1

    公开(公告)日:2017-09-26

    申请号:US15258006

    申请日:2016-09-07

    Applicant: SK hynix Inc.

    Abstract: An image sensor having a lower device, an upper devise, and a TSV structure is provides. The lower device may include a lower substrate, a lower TSV pad, and a lower interlayer insulating layer. The lower TSV pad may be formed over the lower substrate. The lower interlayer insulating layer may cover the lower TSV pad. The upper device may include an upper substrate, an upper TSV pad, and an upper interlayer insulating layer. The upper TSV pad may be formed over the upper substrate. The upper interlayer insulating layer may cover the upper TSV pad. The TSV structure may vertically pass through the upper device and electrically connect the upper TSV pad to the lower TSV pad. The upper TSV pad may include an upper opening. The lower TSV pad may include a unit pad and a lower opening. The unit pad may be exposed through the upper opening and contacts the TSV structure in a top view.

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