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31 条记录 (耗时 0.02 秒)

    Voltage compensated switch stack
    1.
    发明授权
    Voltage compensated switch stack 有权

    公开(公告)号：US10032731B2

    公开(公告)日：2018-07-24

    申请号：US14824583

    申请日：2015-08-12

    申请人： SKYWORKS SOLUTIONS, INC.

    发明人： Hanching Fuh ,  Anuj Madan ,  Guillaume Alexandre Blin ,  Fikret Altunkilic

    IPC分类号： H04B1/40 ,  H01L23/64 ,  H04W88/02 ,  H03K17/693 ,  H01L27/06

    摘要： A radio frequency (RF) switch arrangement that improves the voltage handling capacity of a stack of switching elements (e.g., field-effect transistors (FETs)). The RF switch arrangement can include a ground plane and a stack arranged in relation to the ground plane, the stack including a plurality of switching elements coupled in series with one another. The RF switch arrangement can also include a plurality of capacitive elements, each of the plurality of capacitive elements providing a capacitive path across respective terminals of a corresponding one of the plurality of switching elements.

    Circuits having switches providing increased voltage swing uniformity
    2.
    发明授权
    Circuits having switches providing increased voltage swing uniformity 有权
    具有提供增加的电压摆动均匀性的开关的电路

    公开(公告)号：US09509363B2

    公开(公告)日：2016-11-29

    申请号：US14663507

    申请日：2015-03-20

    申请人： SKYWORKS SOLUTIONS, INC.

    发明人： Anuj Madan ,  Hanching Fuh ,  Fikret Altunkilic ,  Guillaume Alexandre Blin

    IPC分类号： H04B1/44 ,  H03K17/16 ,  H01L25/00 ,  H04B1/48 ,  H03K17/693 ,  H01L23/66

    CPC分类号： H04B1/48 ,  H01L23/66 ,  H01L25/50 ,  H01L2924/0002 ,  H03K17/162 ,  H03K17/687 ,  H03K17/693 ,  H04B1/44 ,  H01L2924/00

    摘要： Circuits are disclosed providing uniform voltage swing across transmit switches for improved device performance. An integrated circuit (IC) formed on a die includes a switch having one or more field effect transistors (FETs) defining an RF signal path between an input port and an output port, each FET having a body node, and the switch being configured to be capable of being in ON and OFF states. The IC further includes a voltage distribution circuit coupled to the switch and configured to reduce voltage distribution variation across the switch, the voltage distribution circuit including one or more elements coupled to a selected body node of one or more FETs to reduce voltage distribution variation across the switch when the switch is in an ON state and is encountered by a respective RF signal at the input port.

    摘要翻译： 公开了提供跨传输开关的均匀电压摆幅的电路，以改善设备性能。 形成在管芯上的集成电路（IC）包括具有一个或多个限定输入端口和输出端口之间的RF信号路径的场效应晶体管（FET）的开关，每个FET具有主体节点，并且该开关被配置为 能够处于ON和OFF状态。 IC还包括耦合到开关并被配置为减小开关两端的电压分布变化的电压分配电路，该电压分配电路包括耦合到一个或多个FET的所选体节点的一个或多个元件，以减少横跨 当开关处于ON状态并且在输入端口处由相应的RF信号遇到时切换。

    CIRCUITS HAVING SWITCHES PROVIDING INCREASED VOLTAGE SWING UNIFORMITY
    5.
    发明申请
    CIRCUITS HAVING SWITCHES PROVIDING INCREASED VOLTAGE SWING UNIFORMITY 审中-公开
    具有提供升压电压均匀性的开关的电路

    公开(公告)号：US20150195000A1

    公开(公告)日：2015-07-09

    申请号：US14663507

    申请日：2015-03-20

    申请人： SKYWORKS SOLUTIONS, INC.

    发明人： Anuj Madan ,  Hanching Fuh ,  Fikret Altunkilic ,  Guillaume Alexandre Blin

    IPC分类号： H04B1/44

    CPC分类号： H04B1/48 ,  H01L23/66 ,  H01L25/50 ,  H01L2924/0002 ,  H03K17/162 ,  H03K17/687 ,  H03K17/693 ,  H04B1/44 ,  H01L2924/00

    摘要： Circuits are disclosed providing uniform voltage swing across transmit switches for improved device performance. An integrated circuit (IC) formed on a die includes a switch having one or more field effect transistors (FETs) defining an RF signal path between an input port and an output port, each FET having a body node, and the switch being configured to be capable of being in ON and OFF states. The IC further includes a voltage distribution circuit coupled to the switch and configured to reduce voltage distribution variation across the switch, the voltage distribution circuit including one or more elements coupled to a selected body node of one or more FETs to reduce voltage distribution variation across the switch when the switch is in an ON state and is encountered by a respective RF signal at the input port.

    摘要翻译： 公开了提供跨传输开关的均匀电压摆幅的电路，以改善设备性能。 形成在管芯上的集成电路（IC）包括具有一个或多个限定输入端口和输出端口之间的RF信号路径的场效应晶体管（FET）的开关，每个FET具有主体节点，并且该开关被配置为 能够处于ON和OFF状态。 IC还包括耦合到开关并被配置为减小开关两端的电压分布变化的电压分配电路，该电压分配电路包括耦合到一个或多个FET的所选体节点的一个或多个元件，以减少横跨 当开关处于ON状态并且在输入端口处由相应的RF信号遇到时切换。

    SWITCHING DEVICE HAVING A DISCHARGE CIRCUIT FOR IMPROVED INTERMODULATION DISTORTION PERFORMANCE
    6.
    发明申请
    SWITCHING DEVICE HAVING A DISCHARGE CIRCUIT FOR IMPROVED INTERMODULATION DISTORTION PERFORMANCE 审中-公开
    具有放电电路的切换装置，用于改进的互连失真性能

    公开(公告)号：US20150147981A1

    公开(公告)日：2015-05-28

    申请号：US14611131

    申请日：2015-01-30

    申请人： SKYWORKS SOLUTIONS, INC.

    发明人： Anuj Madan ,  Fikret Altunkilic ,  Guillaume Alexandre Blin

    IPC分类号： H03K17/16 ,  H04B1/48 ,  H03K17/687

    CPC分类号： H03K17/162 ,  H01L21/77 ,  H01L27/1203 ,  H03K17/063 ,  H03K17/687 ,  H03K17/693 ,  H03K2017/066 ,  H03K2217/0009 ,  H03K2217/0018 ,  H03K2217/0036 ,  H04B1/48

    摘要： Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each having a respective source, drain, gate, and body. The system includes a coupling circuit including a first path and a second path, the first path being between the respective source or the respective drain and the respective gate of the at least one FET, the second path being between the respective source or the respective drain and the respective body of the at least one FET. The coupling circuit may be configured to allow discharge of interface charge from either or both of the coupled gate and body.

    摘要翻译： 公开了提供改进的开关性能的射频（RF）开关电路。 RF开关系统包括设置在第一节点和第二节点之间的至少一个场效应晶体管（FET），每个具有相应的源极，漏极，栅极和主体。 该系统包括耦合电路，该耦合电路包括第一路径和第二路径，第一路径位于相应的源极或相应的漏极与至少一个FET的相应栅极之间，第二路径位于相应的源极或相应的漏极 和至少一个FET的相应体。 耦合电路可以被配置为允许从耦合的栅极和主体中的任一个或两者放电接口电荷。