SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    1.
    发明申请

    公开(公告)号:US20200006321A1

    公开(公告)日:2020-01-02

    申请号:US16565380

    申请日:2019-09-09

    Applicant: SOCIONEXT INC.

    Inventor: Shiro USAMI

    Abstract: Diffusion regions having the same conductivity type are arranged on a side of a second wiring and a side of a third wiring, respectively under a first wiring connected to a signal terminal. Diffusion regions are separated in a whole part or one part of a range in a Y direction. That is, under first wiring, diffusion regions are only formed in parts opposed to diffusion regions formed under the second wiring and third wiring connected to a power supply terminal or a ground terminal, and a diffusion region is not formed in a central part in an X direction. Therefore, terminal capacity of the signal terminal can be reduced without causing ESD resistance to be reduced, in an ESD protection circuit with the signal terminal.

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