公开(公告)号：US20150056783A1

公开(公告)日：2015-02-26

申请号：US14334328

申请日：2014-10-03

Applicant: Soitec

Inventor： Sebastien Kerdiles ,  Daniel Delprat

IPC: H01L21/67 ,  H01L21/762

CPC classification number: H01L21/67132 ,  H01L21/02 ,  H01L21/187 ,  H01L21/76251

Abstract: A method for bonding a first substrate having a first surface to a second substrate having a second surface. This method includes the steps of holding the first substrate by at least two support points, positioning the first substrate and the second substrate so that the first surface and the second surface face each other, deforming the first substrate by applying between at least one pressure point and the two support points a strain toward the second substrate, bringing the deformed first surface and the second surface into contact, and progressively releasing the strain to facilitate bonding of the substrates while minimizing or avoiding the trapping of air bubbles between the substrates.

Abstract translation: 一种用于将具有第一表面的第一基底结合到具有第二表面的第二基底的方法。 该方法包括以下步骤：通过至少两个支撑点保持第一基板，将第一基板和第二基板定位成使得第一表面和第二表面彼此面对，使第一基板通过在至少一个压力点 并且两个支撑点朝向第二基板的应变，使变形的第一表面和第二表面接触，并逐渐释放应变以促进基板的接合，同时最小化或避免在基板之间捕获气泡。

公开(公告)号：US08790993B2

公开(公告)日：2014-07-29

申请号：US13953679

申请日：2013-07-29

Applicant: SOITEC

Inventor： Sebastien Kerdiles ,  Daniel Delprat

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/67132 ,  H01L21/02 ,  H01L21/187 ,  H01L21/76251

Abstract: A method for bonding a first substrate having a first surface to a second substrate having a second surface. This method includes the steps of holding the first substrate by at least two support points, positioning the first substrate and the second substrate so that the first surface and the second surface face each other, deforming the first substrate by applying between at least one pressure point and the two support points a strain toward the second substrate, bringing the deformed first surface and the second surface into contact, and progressively releasing the strain to facilitate bonding of the substrates while minimizing or avoiding the trapping of air bubbles between the substrates.

Abstract translation: 一种用于将具有第一表面的第一基底结合到具有第二表面的第二基底的方法。 该方法包括以下步骤：通过至少两个支撑点保持第一基板，将第一基板和第二基板定位成使得第一表面和第二表面彼此面对，使第一基板通过在至少一个压力点 并且两个支撑点朝向第二基板的应变，使变形的第一表面和第二表面接触，并逐渐释放应变以促进基板的接合，同时最小化或避免在基板之间捕获气泡。

公开(公告)号：US09082819B2

公开(公告)日：2015-07-14

申请号：US14382738

申请日：2013-01-30

Applicant: Soitec

Inventor： Francois Boedt ,  Sebastien Kerdiles

IPC: H01L21/84 ,  H01L21/02 ,  H01L21/762 ,  H01L21/66 ,  H01L21/306

CPC classification number: H01L21/76256 ,  H01L21/02019 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/30604 ,  H01L21/7624 ,  H01L22/12 ,  H01L22/20

Abstract: The invention relates to a process for thinning the active silicon layer of a substrate, which comprises an insulator layer between the active layer and a support, this process comprising one step of sacrificial thinning of active layer by formation of a sacrificial oxide layer by sacrificial thermal oxidation and deoxidation of the sacrificial oxide layer. The process is noteworthy in that it comprises: a step of forming a complementary oxide layer on the active layer, using an oxidizing plasma, this layer having a thickness profile complementary to that of oxide layer, so that the sum of the thicknesses of the oxide layer and of the sacrificial silicon oxide layer are constant over the surface of the treated substrate, a step of deoxidation of this oxide layer, so as to thin active layer by a uniform thickness.

Abstract translation: 本发明涉及一种用于减薄衬底的有源硅层的方法，其包括在有源层和支撑体之间的绝缘体层，该工艺包括通过牺牲热处理形成牺牲氧化层的有源层的牺牲薄化步骤 牺牲氧化层的氧化和脱氧。 该方法值得注意的是，其包括：使用氧化等离子体在有源层上形成互补氧化物层的步骤，该层具有与氧化物层的厚度分布互补的厚度，使得氧化物的厚度之和 层和牺牲氧化硅层在处理过的衬底的表面上是恒定的，该氧化物层脱氧的步骤，以便通过均匀的厚度使活性层变薄。

公开(公告)号：US20150031190A1

公开(公告)日：2015-01-29

申请号：US14382738

申请日：2013-01-30

Applicant: Soitec

Inventor： Francois Boedt ,  Sebastien Kerdiles

IPC: H01L21/762 ,  H01L21/02

CPC classification number: H01L21/76256 ,  H01L21/02019 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/30604 ,  H01L21/7624 ,  H01L22/12 ,  H01L22/20

Abstract: The invention relates to a process for thinning the active silicon layer of a substrate, which comprises an insulator layer between the active layer and a support, this process comprising one step of sacrificial thinning of active layer by formation of a sacrificial oxide layer by sacrificial thermal oxidation and deoxidation of the sacrificial oxide layer. The process is noteworthy in that it comprises: a step of forming a complementary oxide layer, on the active layer, using an oxidizing plasma, this layer having a thickness profile complementary to that of oxide layer, so that the sum of the thicknesses of the oxide layer and of the sacrificial silicon oxide layer are constant over the surface of the treated substrate, a step of deoxidation of this oxide layer, so as to thin active layer by a uniform thickness.

Abstract translation: 本发明涉及一种用于减薄衬底的有源硅层的方法，其包括在有源层和支撑体之间的绝缘体层，该工艺包括通过牺牲热处理形成牺牲氧化层的有源层的牺牲薄化步骤 牺牲氧化层的氧化和脱氧。 该方法值得注意的是，其包括：在有源层上使用氧化等离子体形成互补氧化物层的步骤，该层具有与氧化物层的厚度分布相互补充的厚度， 氧化物层和牺牲氧化硅层在处理过的衬底的表面上是恒定的，该氧化物层脱氧的步骤，以便通过均匀的厚度使活性层变薄。

公开(公告)号：US09799549B2

公开(公告)日：2017-10-24

申请号：US14780467

申请日：2014-03-21

Applicant: Soitec

Inventor： Sebastien Kerdiles ,  Guillaume Chabanne ,  Francois Boedt ,  Aurelia Pierret ,  Xavier Schneider ,  Didier Landru

IPC: H01L21/762 ,  H01L21/02 ,  H01L27/12 ,  H01L29/06

CPC classification number: H01L21/76254 ,  H01L21/02164 ,  H01L21/0217 ,  H01L27/12 ,  H01L29/0649

Abstract: The disclosure relates to a process for manufacturing a composite structure, the process comprising the following steps: a) providing a donor substrate and a carrier substrate; b) forming a dielectric layer; c) forming a covering layer; d) forming a weakened zone in the donor substrate; e) joining the carrier substrate and the donor substrate via a contact surface having an outline; f) fracturing the donor substrate via the weakened zone, steps b) and e) being executed so that the outline is inscribed in the outline, and step c) being executed so that the covering layer covers the peripheral surface of the dielectric layer.

公开(公告)号：US09293473B2

公开(公告)日：2016-03-22

申请号：US14612772

申请日：2015-02-03

Applicant: Soitec

Inventor： Patrick Reynaud ,  Sebastien Kerdiles ,  Daniel Delprat

IPC: H01L27/12 ,  H01L21/762 ,  H01L29/06

CPC classification number: H01L27/1203 ,  H01L21/76254 ,  H01L29/0649

Abstract: A manufacturing process for a semiconductor-on-insulator structure having reduced electrical losses and which includes a support substrate made of silicon, an oxide layer and a thin layer of semiconductor material, and a polycrystalline silicon layer interleaved between the support substrate and the oxide layer. The process includes a treatment capable of conferring high resistivity to the support substrate prior to formation of the polycrystalline silicon layer, and then conducting at least one long thermal stabilization on the structure at a temperature not exceeding 950° C. for at least 10 minutes.

Abstract translation: 一种具有降低的电损耗的绝缘体上半导体结构的制造方法，其包括由硅，氧化物层和半导体材料薄层制成的支撑衬底，以及在支撑衬底和氧化物层之间交错的多晶硅层 。 该方法包括能够在形成多晶硅层之前赋予支撑衬底高电阻率的处理，然后在不超过950℃的温度下在结构上进行至少一个长的热稳定化至少10分钟。

公开(公告)号：US20160042989A1

公开(公告)日：2016-02-11

申请号：US14780467

申请日：2014-03-21

Applicant: SOITEC

Inventor： Sebastien Kerdiles ,  Guillaume Chabanne ,  Francois Boedt

IPC: H01L21/762 ,  H01L27/12 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L21/76254 ,  H01L21/02164 ,  H01L21/0217 ,  H01L27/12 ,  H01L29/0649

Abstract: The disclosure relates to a process for manufacturing a composite structure, the process comprising the following steps: a) providing a donor substrate and a carrier substrate; b) forming a dielectric layer; c) forming a covering layer; d) forming a weakened zone in the donor substrate; e) joining the carrier substrate and the donor substrate via a contact surface having an outline; f) fracturing the donor substrate via the weakened zone, steps b) and e) being executed so that the outline is inscribed in the outline, and step c) being executed so that the covering layer covers the peripheral surface of the dielectric layer.

Abstract translation: 本公开涉及一种用于制造复合结构的方法，该方法包括以下步骤：a）提供施主衬底和载体衬底; b）形成电介质层; c）形成覆盖层; d）在供体衬底中形成弱化区; e）通过具有轮廓的接触表面接合载体基底和施主基底; f）通过弱化区域破坏施主衬底，执行步骤b）和e），使得轮廓被刻划在轮廓中，并且步骤c）被执行以使覆盖层覆盖电介质层的周边表面。

公开(公告)号：US20150171110A1

公开(公告)日：2015-06-18

申请号：US14612772

申请日：2015-02-03

Applicant: SOITEC

Inventor： Patrick Reynaud ,  Sebastien Kerdiles ,  Daniel Delprat

IPC: H01L27/12 ,  H01L29/06

CPC classification number: H01L27/1203 ,  H01L21/76254 ,  H01L29/0649

Abstract: A manufacturing process for a semiconductor-on-insulator structure having reduced electrical losses and which includes a support substrate made of silicon, an oxide layer and a thin layer of semiconductor material, and a polycrystalline silicon layer interleaved between the support substrate and the oxide layer. The process includes a treatment capable of conferring high resistivity to the support substrate prior to formation of the polycrystalline silicon layer, and then conducting at least one long thermal stabilization on the structure at a temperature not exceeding 950° C. for at least 10 minutes.

Abstract translation: 一种具有降低的电损耗的绝缘体上半导体结构的制造方法，其包括由硅，氧化物层和半导体材料薄层制成的支撑衬底，以及在支撑衬底和氧化物层之间交错的多晶硅层 。 该方法包括能够在形成多晶硅层之前赋予支撑衬底高电阻率的处理，然后在不超过950℃的温度下在结构上进行至少一个长的热稳定化至少10分钟。

公开(公告)号：US20130309841A1

公开(公告)日：2013-11-21

申请号：US13953679

申请日：2013-07-29

Applicant: SOITEC

Inventor： Sebastien Kerdiles ,  Daniel Delprat

IPC: H01L21/02

CPC classification number: H01L21/67132 ,  H01L21/02 ,  H01L21/187 ,  H01L21/76251

Abstract: The present invention concerns a method for bonding a first substrate having a first surface to a second substrate having a second surface. This method includes the steps of holding the first substrate by at least two support points, positioning the first substrate and the second substrate so that the first surface and the second surface face each other, deforming the first substrate by applying between at least one pressure point and the two support points a strain toward the second substrate, bringing the deformed first surface and the second surface into contact, and progressively releasing the strain to facilitate bonding of the substrates while minimizing or avoiding the trapping of air bubbles between the substrates.

Abstract translation: 本发明涉及一种用于将具有第一表面的第一衬底与具有第二表面的第二衬底结合的方法。 该方法包括以下步骤：通过至少两个支撑点保持第一基板，将第一基板和第二基板定位成使得第一表面和第二表面彼此面对，使第一基板通过在至少一个压力点 并且两个支撑点朝向第二基板的应变，使变形的第一表面和第二表面接触，并逐渐释放应变以促进基板的接合，同时最小化或避免在基板之间捕获气泡。