SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20170053960A1

    公开(公告)日:2017-02-23

    申请号:US15118575

    申请日:2015-04-15

    Abstract: There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.

    Abstract translation: 提供了半导体器件及其形成方法,所述半导体器件包括:具有第一电极的第一半导体元件; 具有第二电极的第二半导体元件; 形成在所述第二电极上的基于Sn的微焊料凸块; 以及包括与微焊料凸块相对的第一电极的凹凸块,其中第一电极经由微焊料凸块和凹凸块焊接到第二电极。

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