公开(公告)号：US20190326344A1

公开(公告)日：2019-10-24

申请号：US16503062

申请日：2019-07-03

Applicant: SONY CORPORATION

Inventor： Satoru WAKIYAMA ,  Naoki JYO ,  Kan SHIMIZU ,  Toshihiko HAYASHI ,  Takuya NAKAMURA

IPC: H01L27/146 ,  H01L23/48 ,  H01L23/31 ,  H01L23/00

Abstract: There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.

公开(公告)号：US20150303167A1

公开(公告)日：2015-10-22

申请号：US14790146

申请日：2015-07-02

Applicant: c/o SONY CORPORATION

Inventor： Satoru WAKIYAMA ,  Hiroshi OZAKI

IPC: H01L23/00 ,  H01L25/00

CPC classification number: H01L24/81 ,  H01L21/563 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L25/50 ,  H01L27/14618 ,  H01L27/14683 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/1134 ,  H01L2224/11416 ,  H01L2224/11436 ,  H01L2224/11825 ,  H01L2224/11848 ,  H01L2224/13019 ,  H01L2224/13076 ,  H01L2224/13147 ,  H01L2224/1319 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13655 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/8102 ,  H01L2224/81193 ,  H01L2224/81355 ,  H01L2224/81411 ,  H01L2224/81413 ,  H01L2224/81805 ,  H01L2224/8181 ,  H01L2224/81815 ,  H01L2224/81951 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/83862 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/15321 ,  H01L2924/15788 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/00012 ,  H01L2224/11 ,  H01L2224/27416 ,  H01L2224/27436 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A semiconductor apparatus, including: a semiconductor component; a Cu stud bump that is formed on the semiconductor component; and a solder bump configured to electrically connect to the Cu stud bump.

Abstract translation: 一种半导体装置，包括：半导体元件; 形成在所述半导体部件上的Cu凸块; 以及被配置为电连接到所述Cu柱凸块的焊料凸块。

公开(公告)号：US20190013341A1

公开(公告)日：2019-01-10

申请号：US16113886

申请日：2018-08-27

Applicant: Sony Corporation

Inventor： Satoru WAKIYAMA ,  Taizo TAKACHI

IPC: H01L27/146 ,  H01L31/18 ,  H01L31/041 ,  H01L31/0216

CPC classification number: H01L27/14618 ,  H01L27/14632 ,  H01L27/14685 ,  H01L31/02165 ,  H01L31/041 ,  H01L31/18 ,  H01L2224/13 ,  H01L2224/94 ,  Y02E10/50

Abstract: A method of manufacturing a semiconductor device includes: forming, on a cover glass, a film having a predetermined specific gravity and configured to shield an alpha ray that arises from the cover glass; and bonding the cover glass on which the film is formed and an image pickup device, by filling a transparent resin between the cover glass and the image pickup device.

公开(公告)号：US20170186791A1

公开(公告)日：2017-06-29

申请号：US15454560

申请日：2017-03-09

Applicant: SONY CORPORATION

Inventor： Satoru WAKIYAMA ,  Taizo TAKACHI

IPC: H01L27/146 ,  H01L31/041 ,  H01L31/0216

CPC classification number: H01L31/02165 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14685 ,  H01L31/041 ,  H01L31/18 ,  H01L2224/13 ,  H01L2224/94 ,  Y02E10/50

Abstract: A method of manufacturing a semiconductor device includes: forming, on a cover glass, a film having a predetermined specific gravity and configured to shield an alpha ray that arises from the cover glass; and bonding the cover glass on which the film is formed and an image pickup device, by filling a transparent resin between the cover glass and the image pickup device.

公开(公告)号：US20140252526A1

公开(公告)日：2014-09-11

申请号：US14189068

申请日：2014-02-25

Applicant: Sony Corporation

Inventor： Satoru WAKIYAMA ,  Taizo TAKACHI

IPC: H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/02165 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14685 ,  H01L31/041 ,  H01L31/18 ,  H01L2224/13 ,  H01L2224/94 ,  Y02E10/50

Abstract: A method of manufacturing a semiconductor device includes: forming, on a cover glass, a film having a predetermined specific gravity and configured to shield an alpha ray that arises from the cover glass; and bonding the cover glass on which the film is formed and an image pickup device, by filling a transparent resin between the cover glass and the image pickup device.

Abstract translation: 一种制造半导体器件的方法包括：在覆盖玻璃上形成具有预定比重的膜并构造成屏蔽由玻璃罩产生的α射线; 以及通过在透明树脂之间填充在所述盖玻璃和所述图像拾取装置之间来粘结其上形成有所述膜的所述盖玻片和图像拾取装置。

公开(公告)号：US20180166490A1

公开(公告)日：2018-06-14

申请号：US15553326

申请日：2016-02-26

Applicant: SONY CORPORATION

Inventor： Satoru WAKIYAMA ,  Yukio TAGAWA

IPC: H01L27/146 ,  H01L23/48 ,  H01L23/00

CPC classification number: H01L27/14634 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L24/16 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/1469 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05181 ,  H01L2224/05647 ,  H01L2224/16146 ,  H01L2224/73204

Abstract: There is provided an imaging device including: a first semiconductor substrate (21) having a first region (22, R11) that includes a photoelectric conversion section (67) and a via portion (51), a second region (R12) adjacent to the first region, a connection portion (53, 84, 85) disposed at the second region, and a second semiconductor substrate (81), wherein the connection portion electrically couples the first semiconductor substrate to the second semiconductor substrate in a stacked configuration, and wherein a width of the connection portion is greater than a width of the via portion.

公开(公告)号：US20170053960A1

公开(公告)日：2017-02-23

申请号：US15118575

申请日：2015-04-15

Applicant: SONY CORPORATION

Inventor： Satoru WAKIYAMA ,  Naoki JYO ,  Kan SHIMIZU ,  Toshihiko HAYASHI ,  Takuya NAKAMURA

IPC: H01L27/146 ,  H01L23/48 ,  H01L23/00

Abstract: There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.

Abstract translation: 提供了半导体器件及其形成方法，所述半导体器件包括：具有第一电极的第一半导体元件; 具有第二电极的第二半导体元件; 形成在所述第二电极上的基于Sn的微焊料凸块; 以及包括与微焊料凸块相对的第一电极的凹凸块，其中第一电极经由微焊料凸块和凹凸块焊接到第二电极。