公开(公告)号：US10818722B2

公开(公告)日：2020-10-27

申请号：US16510445

申请日：2019-07-12

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/374

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

公开(公告)号：US09548326B2

公开(公告)日：2017-01-17

申请号：US14993847

申请日：2016-01-12

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146 ,  H04N9/04

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H04N5/374 ,  H04N9/045

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Abstract translation: 公开了一种包括多个像素和多个片上透镜的固态成像装置。 多个像素以矩阵图案排列。 每个像素具有被配置为光电转换从半导体衬底的背面侧入射的光的光电转换部。 多个片上透镜被布置用于每隔一个像素。 片上镜头的尺寸比像素大。 存在片上透镜的像素处的每个滤色器具有截面形状，其上侧靠近片上透镜的宽度与片上透镜相同，并且其下侧靠近光电 转换部分比上侧短。

公开(公告)号：US09276032B2

公开(公告)日：2016-03-01

申请号：US14490350

申请日：2014-09-18

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/00 ,  H01L27/146 ,  H04N9/04

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H04N5/374 ,  H04N9/045

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Abstract translation: 公开了一种包括多个像素和多个片上透镜的固态成像装置。 多个像素以矩阵图案排列。 每个像素具有被配置为光电转换从半导体衬底的背面侧入射的光的光电转换部。 多个片上透镜被布置用于每隔一个像素。 片上镜头的尺寸比像素大。 存在片上透镜的像素处的每个滤色器具有截面形状，其上侧靠近片上透镜的宽度与片上透镜相同，并且其下侧靠近光电 转换部分比上侧短。

公开(公告)号：US11329078B2

公开(公告)日：2022-05-10

申请号：US17010445

申请日：2020-09-02

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/374

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

公开(公告)号：US11217612B2

公开(公告)日：2022-01-04

申请号：US16683379

申请日：2019-11-14

Applicant: SONY CORPORATION

Inventor： Hiroshi Tayanaka ,  Kentaro Akiyama ,  Yorito Sakano ,  Takashi Oinoue ,  Yoshiya Hagimoto ,  Yusuke Matsumura ,  Naoyuki Sato ,  Yuki Miyanami ,  Yoichi Ueda ,  Ryosuke Matsumoto

IPC: H01L27/146 ,  H01L27/14 ,  H04N5/355 ,  H04N5/3745 ,  H01L27/02 ,  H04N5/374 ,  H04N5/217 ,  H04N5/235 ,  H04N5/367 ,  H04N5/378

Abstract: The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

公开(公告)号：US10367027B2

公开(公告)日：2019-07-30

申请号：US15725957

申请日：2017-10-05

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/374

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

公开(公告)号：US20160126273A1

公开(公告)日：2016-05-05

申请号：US14993847

申请日：2016-01-12

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H04N5/374 ,  H04N9/045

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

公开(公告)号：US20150084144A1

公开(公告)日：2015-03-26

申请号：US14490350

申请日：2014-09-18

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146 ,  H04N9/04

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H04N5/374 ,  H04N9/045

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Abstract translation: 公开了一种包括多个像素和多个片上透镜的固态成像装置。 多个像素以矩阵图案排列。 每个像素具有被配置为光电转换从半导体衬底的背面侧入射的光的光电转换部。 多个片上透镜被布置用于每隔一个像素。 片上镜头的尺寸比像素大。 存在片上透镜的像素处的每个滤色器具有截面形状，其上侧靠近片上透镜的宽度与片上透镜相同，并且其下侧靠近光电 转换部分比上侧短。

公开(公告)号：US10700114B2

公开(公告)日：2020-06-30

申请号：US15737402

申请日：2017-04-11

Applicant: SONY CORPORATION

Inventor： Hideyuki Honda ,  Tetsuya Uchida ,  Toshifumi Wakano ,  Yusuke Tanaka ,  Yoshiharu Kudoh ,  Hirotoshi Nomura ,  Tomoyuki Hirano ,  Shinichi Yoshida ,  Yoichi Ueda ,  Kosuke Nakanishi

IPC: H01L27/146 ,  H01L21/76 ,  H04N5/365 ,  H04N5/378 ,  H04N5/376

Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

公开(公告)号：US10515988B2

公开(公告)日：2019-12-24

申请号：US15551129

申请日：2016-02-12

Applicant: SONY CORPORATION

Inventor： Hiroshi Tayanaka ,  Kentaro Akiyama ,  Yorito Sakano ,  Takashi Oinoue ,  Yoshiya Hagimoto ,  Yusuke Matsumura ,  Naoyuki Sato ,  Yuki Miyanami ,  Yoichi Ueda ,  Ryosuke Matsumoto

IPC: H01L27/146 ,  H01L27/14 ,  H04N5/374 ,  H04N5/217 ,  H04N5/235 ,  H04N5/355 ,  H04N5/367 ,  H04N5/378 ,  H04N5/3745 ,  H01L27/02

Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part. The first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type.