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    SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC DEVICE
    3.
    发明申请
    SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC DEVICE 有权
    固态成像元件，制造固态成像元件的方法和电子器件

    公开(公告)号：US20150236066A1

    公开(公告)日：2015-08-20

    申请号：US14619513

    申请日：2015-02-11

    Applicant: Sony Corporation

    Inventor： Hiroshi Tayanaka

    IPC: H01L27/146

    CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627

    Abstract: A solid-state imaging element includes a plurality of pixels which are two-dimensionally arranged and each of which includes a photoelectric conversion element, and a microlens which is provided on one or two or more first pixels out of the plurality of the pixels, in which an optical axis of the microlens extends inside a second pixel which is adjacent to the first pixel.

    Abstract translation: 固态成像元件包括二维排列的多个像素，每个像素包括光电转换元件，以及设置在多个像素中的一个或两个或更多个第一像素上的微透镜， 微透镜的光轴在与第一像素相邻的第二像素内延伸。

    Solid-State imaging device and imaging apparatus having offset optical waveguides
    6.
    发明授权
    Solid-State imaging device and imaging apparatus having offset optical waveguides 有权
    具有偏移光波导的固态成像装置和成像装置

    公开(公告)号：US08817164B2

    公开(公告)日：2014-08-26

    申请号：US13756124

    申请日：2013-01-31

    Applicant: Sony Corporation

    Inventor： Hiroshi Tayanaka ,  Susumu Ooki ,  Junichi Furukawa ,  Fumiaki Okazaki

    IPC: H04N5/225 ,  H04N3/14 ,  H04N5/335

    CPC classification number: H01L31/0232 ,  H04N5/2254 ,  H04N5/37457

    Abstract: An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.

    Abstract translation: 成像装置包括具有两个或更多个共享浮动扩散的像素的基本单元。 成像装置还包括由基本单元中的两个或更多像素共享的并且布置在两个或更多个像素的外侧上的晶体管。 成像装置还包括光接收单元，其通过传送门连接到基本单元中的像素共享的浮动扩散。 在成像装置中，片上透镜基本上以规则的间隔布置。 此外，形成光波导，使得其在固态成像装置的表面中的位置位于从光接收单元的中心偏移到晶体管和光接收单元的内部的位置，并且 片内镜头内。

    Imaging apparatus, driving method, and electronic device
    8.
    发明授权
    Imaging apparatus, driving method, and electronic device 有权

    公开(公告)号：US11128823B2

    公开(公告)日：2021-09-21

    申请号：US16088142

    申请日：2017-03-17

    Applicant: SONY CORPORATION

    Inventor： Takashi Machida ,  Ryoji Suzuki ,  Hiroshi Tayanaka

    IPC: H04N5/355 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H01L27/146

    Abstract: Provided is an imaging apparatus that includes a pixel array portion, a plurality of unit pixels in the pixel array portion, and a driving unit that controls an operation of the unit pixel. The unit pixel includes a photoelectric converter, a charge retention unit that retains a charge, a charge-voltage converter that converts the charge into a voltage, a first transmitting unit that transmits the charge from the photoelectric converter to the charge retention unit, a second transmitting unit that transmits the charge from the photoelectric converter to the charge-voltage converter, and a third transmitting unit that transmits the charge from the charge retention unit to the charge-voltage converter.

    Solid-state imaging apparatus, manufacturing method therefor, and electronic apparatus
    10.
    发明授权
    Solid-state imaging apparatus, manufacturing method therefor, and electronic apparatus 有权
    固体摄像装置及其制造方法以及电子设备

    公开(公告)号：US09564465B2

    公开(公告)日：2017-02-07

    申请号：US14912659

    申请日：2014-08-15

    Applicant: SONY CORPORATION

    Inventor： Hiroshi Tayanaka

    IPC: H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/036 ,  H04N5/3594 ,  H04N5/367 ,  H04N5/3745 ,  H04N5/37457

    Abstract: The present technology relates to a solid-state imaging apparatus, a manufacturing method therefor, and an electronic apparatus by which fine pixel signals can be suitably generated.A charge accumulation section that is formed on a first semiconductor substrate and accumulates photoelectrically converted charges, a charge-retaining section that is formed on a second semiconductor substrate and retains charges accumulated in the charge accumulation section, and a transfer transistor that is formed on the first semiconductor substrate and the second semiconductor substrate and transfers charges accumulated in the charge accumulation section to the charge-retaining section are provided. A bonding interface between the first semiconductor substrate and the second semiconductor substrate is formed in a channel of the transfer transistor.

    Abstract translation: 一种形成在第一半导体衬底上并累积光电转换电荷的电荷累积部分，形成在第二半导体衬底上并保持蓄积在电荷累积部分中的电荷的电荷保持部分，以及形成在第二半导体衬底上的转移晶体管 第一半导体衬底和第二半导体衬底，并且将积累在电荷累积部分中的电荷转移到电荷保持部分。 第一半导体衬底和第二半导体衬底之间的结合界面形成在转移晶体管的沟道中。

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